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1.再颁专利Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN 有权具有PTMN的反铁磁层的磁阻头的制造方法公开(公告)号：USRE37819E1
公开(公告)日：2002-08-13
申请号：US09482696
申请日：2000-01-18
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： The present invention provides a magnetoresistive head wherein: a magnetoresistive film is created in a read-track region at the center of the magnetoresistive head; an antiferromagnetic film and a ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with the antiferromagnetic film are created on each end of the magnetoresistive film outside the read-track region in such a way that the ferromagnetic film is located beside the magnetoresistive film; a nonmagnetic intermediate film is created between the magnetoresistive film and the ferromagnetic film for preventing ferromagnetic coupling from being developed on a contact boundary surface between the magnetoresistive film and the ferromagnetic film and for making crystal orientations of the antiferromagnetic film and the ferromagnetic film uniform; and bias magnetization is applied to the magnetoresistive film by exchange coupling between the antiferromagnetic film and the ferromagnetic film.
摘要翻译： 本发明提供了一种磁阻头，其中：在磁阻头的中心处的读磁道区域中产生磁阻膜; 在磁轨膜区域的外侧的磁阻膜的两端形成反铁磁膜和由于与反铁磁性膜直接接触而产生交换耦合磁场的铁磁性膜，使铁磁膜位于磁阻膜旁边 ; 在磁阻膜和铁磁膜之间形成非磁性中间膜，用于防止铁磁耦合在磁阻膜和铁磁膜之间的接触边界面上显影，并使反铁磁膜和铁磁膜的晶体取向均匀; 并且通过反铁磁膜和铁磁性膜之间的交换耦合将偏磁化施加到磁阻膜。
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2.发明授权Method of manufacturing film laminate having exchange anisotropic magnetic field 有权具有交换各向异性磁场的膜层叠体的制造方法公开(公告)号：US06352621B1
公开(公告)日：2002-03-05
申请号：US09640971
申请日：2000-08-17
IPC分类号： C23C1435
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3948 , G11B2005/3996 , G11C11/16 , H01F10/3263 , H01F10/3268 , H01L43/08 , H01L43/12
摘要： PtMn films are used as antiferromagnetic layers of a dual spin-valve type magnetoresistive sensor. An exchange anisotropic magnetic field is achieved regardless of whether the PtMn film is formed over or under the pinned magnetic layer. Also, an effective exchange anisotropic magnetic field is produced even with heat treatment at a relatively low temperature. Alternatively, a PtMn film is used as an antiferromagnetic layer of a spin-valve film laminate. The use of a PtMn film enables a sufficient exchange anisotropic magnetic field to be produced even with a relatively low heat treatment temperature and a relatively small film thickness. Therefore, the number of total layers of the spin-valve film laminate can be increased to increase a magnetoresistance ratio, and a total thickness of the spin-valve film laminate can be made relatively small.
摘要翻译： PtMn膜用作双自旋阀型磁阻传感器的反铁磁层。 无论PtMn膜是否形成在被钉扎的磁性层之上或之下，都实现了交换各向异性磁场。 此外，即使在相对低的温度下进行热处理，也产生有效的交换各向异性磁场。 或者，使用PtMn膜作为自旋阀膜层叠体的反铁磁层。 使用PtMn膜即使在相对低的热处理温度和相对较小的膜厚度下也能够产生充分的交换各向异性磁场。 因此，可以增加自旋阀膜层压体的总层数以增加磁阻比，并且可以使自旋阀膜层叠体的总厚度相对较小。
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公开(公告)号：US06307722B1
公开(公告)日：2001-10-23
申请号：US09237547
申请日：1999-01-26
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046
摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
摘要翻译： 在非磁性材料层上形成纵向偏置层和电极层。 通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。 此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层 在上述结构上形成固定磁性层和偏置层。 然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。 三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。 所得到的三层膜或自旋阀膜具有优异的磁检测特性。 此外，纵向偏置层与磁阻效应层具有良好的磁耦合。
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公开(公告)号：US06198378B1
公开(公告)日：2001-03-06
申请号：US08707544
申请日：1996-09-04
IPC分类号： H01L4300
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer, the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
摘要翻译： 通过在下间隙层的上表面上产生第一反铁磁层制造的磁阻传感器，反铁磁层具有由下间隙层的上表面形成的轨道宽度分隔的第一和第二暴露部分。 然后，将自由磁性层，非磁性导电层，钉扎磁性层和第二反铁磁层层叠在第一反铁磁性层上，并在轨道宽度上一个接一个地堆叠。 由于在第一反铁磁层之后产生自由磁性层，所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时，磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态，所以可降低Barkhausen噪声的量。
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公开(公告)号：US06201465B1
公开(公告)日：2001-03-13
申请号：US09432456
申请日：1999-11-02
IPC分类号： H01L4300
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A magnetoresistive sensor is fabricated as follows. First of all, first antiferromagnetic layers are created on the upper surfaces on both sides of a lower-gap layer, sandwiching a track width on the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another in the order the layers are enumerated. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
摘要翻译： 如下制造磁阻传感器。 首先，在下间隙层的两侧的上表面上形成第一反铁磁性层，在下间隙层的上表面夹着轨道宽度。 然后，依次层叠第一反铁磁层上的自由磁性层，非磁性导电层，钉扎磁性层和第二反铁磁性层，并且沿轨道宽度的一部分依次层叠。 由于在第一反铁磁层之后产生自由磁性层，所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时，磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态，所以可降低Barkhausen噪声的量。
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公开(公告)号：US06153062A
公开(公告)日：2000-11-28
申请号：US208354
申请日：1998-12-10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3948 , G11C11/16 , H01F10/3263 , H01F10/3268 , H01L43/08 , H01L43/12 , G11B2005/3996 , G11B5/3163
摘要： PtMn films are used as antiferromagnetic layers of a dual spin-valve type magnetoresistive sensor. An exchange anisotropic magnetic field is achieved regardless of whether the PtMn film is formed over or under the pinned magnetic layer. Also, an effective exchange anisotropic magnetic field is produced even with heat treatment at a relatively low temperature. Alternatively, a PtMn film is used as an antiferromagnetic layer of a spin-valve film laminate. The use of a PtMn film enables a sufficient exchange anisotropic magnetic field to be produced even with a relatively low heat treatment temperature and a relatively small film thickness. Therefore, the number of total layers of the spin-valve film laminate can be increased to increase a magnetoresistance ratio, and a total thickness of the spin-valve film laminate can be made relatively small.
摘要翻译： PtMn膜用作双自旋阀型磁阻传感器的反铁磁层。 无论PtMn膜是否形成在被钉扎的磁性层之上或之下，都实现了交换各向异性磁场。 此外，即使在相对低的温度下进行热处理，也产生有效的交换各向异性磁场。 或者，使用PtMn膜作为自旋阀膜层叠体的反铁磁层。 使用PtMn膜即使在相对低的热处理温度和相对较小的膜厚度下也能够产生充分的交换各向异性磁场。 因此，可以增加自旋阀膜层压体的总层数以增加磁阻比，并且可以使自旋阀膜层叠体的总厚度相对较小。
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公开(公告)号：US6122151A
公开(公告)日：2000-09-19
申请号：US376937
申请日：1999-08-18
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/3903 , G11B5/59683
摘要： A spin-valve magnetoresistive element includes a hard bias layer formed on a pinned magnetic layer with a non-magnetic layer therebetween, and thus the magnetic field from the hard bias layer is efficiently applied into a free magnetic layer. Also, the pinned magnetic layer is not influenced by the hard bias layer because of the interposition of the non-magnetic layer. Accordingly, the pinned magnetic layer and the free magnetic layer are properly put into single magnetic domain states, and thus, Barkhausen noise is reduced and satisfactory micro-track-asymmetry can be obtained.
摘要翻译： 自旋阀磁阻元件包括形成在其上具有非磁性层的钉扎磁性层上的硬偏置层，因此来自硬偏置层的磁场被有效地施加到自由磁性层中。 此外，由于插入非磁性层，被钉扎的磁性层不受硬偏置层的影响。 因此，钉扎磁性层和自由磁性层适当地变成单个磁畴状态，因此巴克豪森噪声降低，并且可以获得满意的微轨道不对称性。
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公开(公告)号：US5972420A
公开(公告)日：1999-10-26
申请号：US918643
申请日：1997-08-22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , G11B5/3116 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer, the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
摘要翻译： 通过在下间隙层的上表面上产生第一反铁磁层制造的磁阻传感器，所述反铁磁层具有由下间隙层的上表面形成的轨道宽度分开的第一和第二暴露部分。 然后，将自由磁性层，非磁性导电层，钉扎磁性层和第二反铁磁层层叠在第一反铁磁性层上，并在轨道宽度上一个接一个地堆叠。 由于在第一反铁磁层之后产生自由磁性层，所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时，磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态，所以可降低Barkhausen噪声的量。
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公开(公告)号：US5869963A
公开(公告)日：1999-02-09
申请号：US922937
申请日：1997-09-03
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11C11/16 , H01F10/32 , H01L43/08 , H01L43/12 , G01R33/02 , G11B5/127 , G11C19/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3948 , G11C11/16 , H01F10/3263 , H01F10/3268 , H01L43/08 , H01L43/12 , G11B2005/3996 , G11B5/3163
摘要： PtMn films are used as antiferromagnetic layers of a dual spin-valve type magnetoresistive sensor. An exchange anisotropic magnetic field is achieved regardless of whether the PtMn film is formed over or under the pinned magnetic layer. Also, an effective exchange anisotropic magnetic field is produced even with heat treatment at a relatively low temperature. Alternatively, a PtMn film is used as an antiferromagnetic layer of a spin-valve film laminate. The use of a PtMn film enables a sufficient exchange anisotropic magnetic field to be produced even with a relatively low heat treatment temperature and a relatively small film thickness. Therefore, the number of total layers of the spin-valve film laminate can be increased to increase a magnetoresistance ratio, and a total thickness of the spin-valve film laminate can be made relatively small.
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公开(公告)号：US5675460A
公开(公告)日：1997-10-07
申请号：US541784
申请日：1995-10-10
CPC分类号： G11B5/1276 , G11B5/1878
摘要： A magnetic head of the type which includes a pair of magnetic cores joined to each other through the intermediation of gap layers, with Fe-type metal magnetic thin films being arranged between the gap layers and the magnetic cores, the metal magnetic thin films being formed of a magnetic material which can be represented by the composition formula: Fe-X-M-C, with the concentration of the element X being higher in the surface portions of the metal magnetic thin films than in the other portions thereof. In the above composition formula, X represents one or two or more of the following elements: Al, Si, Cr, Mo and W, and M represents one or two or more of the following elements: Ti, V, Zr, Nb, Hf and Ta. Due to this construction, the metal magnetic thin films can contain the element X at high concentration in the surface portions thereof, which element combines with oxygen in the surface portions to generate an oxide coating, thereby providing a magnetic head excelling in corrosion resistance. When, in a magnetic head containing Al in the metal magnetic thin films, the Al is contained at higher concentration in the film surface portions, it is possible to generate an Al oxide to improve the corrosion resistance.
摘要翻译： 一种磁头，其包括通过间隙层彼此接合的一对磁芯，在间隙层和磁芯之间配置Fe型金属磁性薄膜，形成金属磁性薄膜 可以由组成式：Fe-XMC表示的磁性材料，其中金属磁性薄膜的表面部分中元素X的浓度高于其它部分。 在上述组成式中，X表示以下元素中的一种或两种以上的元素：Al，Si，Cr，Mo和W，M表示以下元素中的一种或两种以上：Ti，V，Zr，Nb，Hf 和Ta。 由于这种结构，金属磁性薄膜可以在其表面部分含有高浓度的元素X，该元素与表面部分中的氧相结合以产生氧化物涂层，从而提供耐腐蚀性优异的磁头。 当在包含金属磁性薄膜中的Al的磁头中，在膜表面部分中含有较高浓度的Al时，可以生成Al氧化物以提高耐腐蚀性。
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