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    Copolyester film and a method for production thereof
    1.
    发明授权
    Copolyester film and a method for production thereof 失效
    共聚酯膜及其制备方法

    公开(公告)号：US4725483A

    公开(公告)日：1988-02-16

    申请号：US865969

    申请日：1986-05-22

    申请人： Masao Ishii ,  Takayuki Okamura ,  Keishiro Igi ,  Osamu Kusudo ,  Yoshito Hamamoto

    发明人： Masao Ishii ,  Takayuki Okamura ,  Keishiro Igi ,  Osamu Kusudo ,  Yoshito Hamamoto

    IPC分类号： C09J7/02 ,  B29C47/88 ,  B32B15/08 ,  B32B15/09 ,  C08G63/00 ,  C08G63/18 ,  C08G63/181 ,  C08G63/183 ,  C08G63/672 ,  C08J5/18 ,  C09J7/00 ,  C09J167/00 ,  C09J167/02 ,  B32B7/00 ,  B32B27/06 ,  B32B27/36

    CPC分类号： C08J5/18 ,  B29C47/0021 ,  B29C47/8805 ,  B29C47/8845 ,  C08G63/672 ,  C09J7/00 ,  C08J2367/02 ,  Y10T428/31786

    摘要： A copolyester film is disclosed which comprises a copolyester in which the dicarboxylic acid component comprises 100 to 85 mole percent of terephthalic acid and the diol component comprises 65 to 97 mole percent of 1,4-butanediol and 3 to 35 mole percent of a polyethylene glycol with a molecular weight of 106 to 550. The copolyester has a reduced viscosity in the range of 0.8 to 1.4 dl/g as measured at a concentration of 0.5 g/dl in a 1:1 (by weight) solvent mixture of phenol and tetrachloroethane at 30.degree. C. The copolyester has a main endothermic peak with a peak maximum temperature of 160.degree. C. to 200.degree. C. and at least one subsidiary endothermic peak with a peak maximum temperature of 30.degree. C. to 80.degree. C. in differential scanning calorimetry with the ratio (R) of the area occupying not less than 40.degree. C. in the subsidiary endothermic peak, the main endothermic peak area being within the range of 3 percent to 20 percent.A hot melt adhesive comprising the copolyester film and a method for producing the copolyester film are also disclosed. The hot melt adhesive has a high initial modulus of elasticity at high temperature (30.degree.-50.degree. C.) and features improved processability or workability while retaining the required properties of a hot melt adhesive.

    摘要翻译： 公开了一种共聚酯膜，其包含共聚酯，其中二羧酸组分包含100至85摩尔％的对苯二甲酸，并且二醇组分包含65至97摩尔％的1,4-丁二醇和3至35摩尔％的聚乙二醇 分子量为106至550.共聚酯的浓度为0.5至1.4dl / g，浓度为0.5g / dl，苯酚和四氯乙烷的1:1（重量）溶剂混合物中的比浓粘度 共聚多酯具有主峰吸收峰，最高峰最高温度为160℃至200℃，至少一个辅助吸热峰的峰值最高温度为30℃至80℃。 差示扫描量热法在辅助吸热峰中占据不小于40℃的面积比（R），主吸热峰面积在3％至20％的范围内。 还公开了包含共聚酯膜的热熔粘合剂和共聚酯膜的制备方法。 热熔粘合剂在高温（30℃-50℃）下具有高的初始弹性模量，并且具有改进的加工性或加工性，同时保持热熔粘合剂所需的性能。

    Polycarbonate resin composition
    2.
    发明授权
    Polycarbonate resin composition 失效
    聚碳酸酯树脂组合物

    公开(公告)号：US4657973A

    公开(公告)日：1987-04-14

    申请号：US817064

    申请日：1986-01-08

    申请人： Hideki Endo ,  Kazuto Hashimoto ,  Kenji Tanaka ,  Takeshi Matsumoto ,  Keishiro Igi ,  Takayuki Okamura ,  Shunro Taniguchi ,  Masao Ishii ,  Yoshifumi Murata ,  Shinichi Yokota

    发明人： Hideki Endo ,  Kazuto Hashimoto ,  Kenji Tanaka ,  Takeshi Matsumoto ,  Keishiro Igi ,  Takayuki Okamura ,  Shunro Taniguchi ,  Masao Ishii ,  Yoshifumi Murata ,  Shinichi Yokota

    IPC分类号： C08L67/02 ,  C08L69/00

    CPC分类号： C08L69/00 ,  C08L67/025

    摘要： Polycarbonate resin compositions are disclosed, comprising: (1) (A) a polycarbonate resin and (B) polyesterether elastomer, said elastomer composing of a bifunctional carboxylic acid component and a glycol component comprising polyalkylene glycol and ethylene glycol, or (2) the components (A) and (B), and (C) a rubber-like elastomer, or (3) the components (A) and (B), and (D) a polyester resin, or (4) the components (A), (B), (C) and (D). These compositions are excellent in solvent resistance and so forth, and further possess excellent physical and thermal properties characteristic of a polycarbonate resin. Thus the compositions are useful for use in production of industrial and electrical articles, such as a car bumper in the field of car industry.

    摘要翻译： 公开了聚碳酸酯树脂组合物，其包括：（A）聚碳酸酯树脂和（B）聚醚醚弹性体，由双官能羧酸组分构成的弹性体和包含聚亚烷基二醇和乙二醇的二醇组分，或（2）组分 （A）和（B），（C）橡胶状弹性体，或（3）成分（A）和（B）和（D）聚酯树脂，或（4）成分（A） （B），（C）和（D）。 这些组合物的耐溶剂性等优异，并且还具有优异的聚碳酸酯树脂的物理和热特性。 因此，组合物可用于制造工业和电气制品，例如汽车工业领域的汽车保险杠。

    Polycarbonate resin composition
    3.
    发明授权
    Polycarbonate resin composition 失效
    聚碳酸酯树脂组合物

    公开(公告)号：US4833217A

    公开(公告)日：1989-05-23

    申请号：US805659

    申请日：1985-12-06

    申请人： Keishiro Igi ,  Takayuki Okamura ,  Shunro Taniguchi ,  Masao Ishii ,  Yoshifumi Murata ,  Shinichi Yokota ,  Takeshi Matsumoto ,  Hideki Endo ,  Kazuto Hashimoto

    发明人： Keishiro Igi ,  Takayuki Okamura ,  Shunro Taniguchi ,  Masao Ishii ,  Yoshifumi Murata ,  Shinichi Yokota ,  Takeshi Matsumoto ,  Hideki Endo ,  Kazuto Hashimoto

    IPC分类号： C08G63/64 ,  C08L69/00

    CPC分类号： C08G63/64 ,  C08L69/00

    摘要： A polycarbonate resin composition which comprises(i) bisphenol type aromatic polycarbonate, in admixture with(ii) 5 to 200 parts by weight of a polyester type copolymer, per 100 parts by weight of said bisphenol type aromatic polycarbonate, which is produced by adding(a) 5 to 100 parts by weight of bisphenol type aromatic polycarbonate having a viscosity-average molecular weight of not less than 5,000,to (b) 100 parts by weight of a polyester precursor having a number-average polymerization degree of 1 to 30 which is obtained from bifunctional carboxylic acid mainly composed of terephthalic acid or a derivative thereof having an ester forming ability and a diol component, and effecting polycondensation, which provides an improved fluidity and solvent cracking resistance without remarkably decreasing of the original impact resistance and transparency of polycarbonate, to eliminate the defects of polycarbonate.

    摘要翻译： 一种聚碳酸酯树脂组合物，其包含（i）双酚型芳族聚碳酸酯，其与（ii）5〜200重量份的聚酯型共聚物相混合，相对于100重量份的所述双酚型芳族聚碳酸酯，其通过将（ a）5〜100重量份粘均分子量不小于5,000的双酚型芳族聚碳酸酯，（b）100重量份数均聚合度为1〜30的聚酯前体， 由主要由具有酯形成能力的对苯二甲酸或其衍生物和二醇组分的双官能羧酸获得，并且进行缩聚，其提供改善的流动性和耐溶剂龟裂性，而不显着降低聚碳酸酯的原始耐冲击性和透明度 ，以消除聚碳酸酯的缺陷。

    Nonvolatile semiconductor memory device and method for manufacturing same
    6.
    发明授权
    Nonvolatile semiconductor memory device and method for manufacturing same 失效
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08598649B2

    公开(公告)日：2013-12-03

    申请号：US12792378

    申请日：2010-06-02

    申请人： Takayuki Okamura ,  Noboru Ooike ,  Wataru Sakamoto ,  Takashi Izumida

    发明人： Takayuki Okamura ,  Noboru Ooike ,  Wataru Sakamoto ,  Takashi Izumida

    IPC分类号： H01L29/792 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L27/11565 ,  H01L21/28282 ,  H01L27/11568

    摘要： A nonvolatile semiconductor memory device according to embodiment includes: a semiconductor substrate having an upper portion being partitioned into a plurality of semiconductor portions extending in a first direction; a charge storage film provided on the semiconductor portion; a word-line electrode provided on the semiconductor substrate and extending in a second direction intersecting with the first direction; and a pair of selection gate electrodes provided on both sides of the word-line electrode in the first direction on the semiconductor substrate and extending in the second direction, a shortest distance between a corner portion of each of the semiconductor portions and each of the selection gate electrodes being longer than a shortest distance between the corner portion of the semiconductor portion and the word-line electrode in a cross section parallel to the second direction.

    摘要翻译： 根据实施例的非易失性半导体存储器件包括：半导体衬底，其具有被分隔成沿第一方向延伸的多个半导体部分的上部; 设置在半导体部分上的电荷存储膜; 字线电极，其设置在所述半导体基板上并沿与所述第一方向交叉的第二方向延伸; 以及一对选择栅电极，其设置在所述半导体基板上的所述字线电极的所述第一方向的两侧，并且沿所述第二方向延伸，所述半导体部分的每个的角部与所述选择中的每一个之间的最短距离 栅电极比与半导体部分的角部和字线电极之间的平行于第二方向的截面中的最短距离更长。

    Semiconductor memory device including laminated gate having electric charge accumulating layer and control gate and method of manufacturing the same
    7.
    发明授权
    Semiconductor memory device including laminated gate having electric charge accumulating layer and control gate and method of manufacturing the same 有权
    包括具有电荷累积层和控制栅极的层叠栅极的半导体存储器件及其制造方法

    公开(公告)号：US07936005B2

    公开(公告)日：2011-05-03

    申请号：US12473709

    申请日：2009-05-28

    申请人： Takayuki Okamura

    发明人： Takayuki Okamura

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11568

    摘要： A semiconductor memory device includes a first active region, a second active region, an element isolation region, memory cell transistors. Each of memory cell transistors includes a laminated gate and a first impurity diffusion layer functioning as a source and a drain. The laminated gate includes a first insulating film, a second insulating film, and a control gate electrode. The second insulating film is commonly connected between the plurality of memory cell transistors to step over the element isolation region and is in contact with an upper surface of the element isolation region. An upper surface of the element isolation region is higher than a bottom surface of the first insulating film and is located under the upper surface of the first insulating film.

    摘要翻译： 半导体存储器件包括第一有源区，第二有源区，元件隔离区，存储单元晶体管。 每个存储单元晶体管包括层叠栅极和用作源极和漏极的第一杂质扩散层。 层叠栅极包括第一绝缘膜，第二绝缘膜和控制栅电极。 第二绝缘膜通常连接在多个存储单元晶体管之间，以跨越元件隔离区并与元件隔离区的上表面接触。 元件隔离区的上表面高于第一绝缘膜的底面，位于第一绝缘膜的上表面的下方。

    Semiconductor device and manufacturing method thereof
    8.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07795092B2

    公开(公告)日：2010-09-14

    申请号：US12132450

    申请日：2008-06-03

    申请人： Yasuyuki Matsuoka ,  Masaru Kito ,  Hideaki Aochi ,  Takayuki Okamura

    发明人： Yasuyuki Matsuoka ,  Masaru Kito ,  Hideaki Aochi ,  Takayuki Okamura

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7883

    摘要： A semiconductor memory device includes gate electrodes extending in a first direction above a surface of a substrate. The semiconductor memory device also includes a reinforcement insulation film formed in a line shape and extending in a second direction crossing the gate electrodes in a plane view viewed from above the surface of the substrate, and connected to adjacent gate electrodes. Further, the semiconductor memory device includes an interlayer dielectric film provided between the adjacent gate electrodes, and having a void inside.

    摘要翻译： 半导体存储器件包括沿基板表面的第一方向延伸的栅电极。 半导体存储器件还包括形成为线形并且在从基板的表面上方观察的平面图中的与栅电极交叉的第二方向上延伸并且连接到相邻栅电极的加强绝缘膜。 此外，半导体存储器件包括设置在相邻栅电极之间并且内部具有空隙的层间电介质膜。

    NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF 有权
    非易失性半导体存储器及其制造方法

    公开(公告)号：US20090218607A1

    公开(公告)日：2009-09-03

    申请号：US12393186

    申请日：2009-02-26

    申请人： Takayuki Toba ,  Takayuki Okamura ,  Moto Yabuki

    发明人： Takayuki Toba ,  Takayuki Okamura ,  Moto Yabuki

    IPC分类号： H01L29/792 ,  H01L29/00 ,  H01L21/336

    CPC分类号： H01L27/11573

    摘要： A nonvolatile semiconductor memory of an aspect of the invention includes memory cells in the memory cell forming area, and select gate transistors in the select gate forming area. Each memory cell has two first diffusion layers formed in a semiconductor substrate, a first gate insulating film formed on the semiconductor substrate, a charge storage layer formed on the first gate insulating film, a first intermediate insulating film formed on the charge storage layer and a first gate electrode formed on the first intermediate insulating film. Each select gate transistor has two second diffusion layers formed in the semiconductor substrate, a second gate insulating film formed on the semiconductor substrate, a second intermediate insulating film formed in direct contact with the second gate insulating film and having the same structure as the first intermediate insulating film, and a second gate electrode formed on the second intermediate insulating film.

    摘要翻译： 本发明的一个方面的非易失性半导体存储器包括存储单元形成区域中的存储单元，并且在选择栅极形成区域中选择栅极晶体管。 每个存储单元具有形成在半导体衬底中的两个第一扩散层，形成在半导体衬底上的第一栅极绝缘膜，形成在第一栅极绝缘膜上的电荷存储层，形成在电荷存储层上的第一中间绝缘膜和 第一栅电极，形成在第一中间绝缘膜上。 每个选择晶体管具有形成在半导体衬底中的两个第二扩散层，形成在半导体衬底上的第二栅极绝缘膜，与第二栅极绝缘膜直接接触形成并具有与第一中间层相同结构的第二中间绝缘膜 绝缘膜和形成在第二中间绝缘膜上的第二栅电极。