公开(公告)号：US08471267B2

公开(公告)日：2013-06-25

申请号：US13129825

申请日：2010-08-26

申请人： Masashi Hayashi ,  Koichi Hashimoto ,  Kazuhiro Adachi

发明人： Masashi Hayashi ,  Koichi Hashimoto ,  Kazuhiro Adachi

IPC分类号： H01L29/12 ,  H01L21/31

CPC分类号： H01L29/66068 ,  H01L21/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of the present invention has a semiconductor element region 17 that is provided in part of a silicon carbide layer 3 and a guard-ring region 18 that is provided in another part of the silicon carbide layer 3 surrounding the semiconductor element region 17 when seen in a direction perpendicular to a principal surface of the silicon carbide layer 3. The semiconductor device includes: an interlayer insulation film 10 which is provided on the principal surface of the silicon carbide layer 3 in the semiconductor element region 17 and the guard-ring region 18, the interlayer insulation film 10 having a relative dielectric constant of 20 or more; a first protective insulation film 14 provided on the interlayer insulation film in the guard-ring region 18; and a second protective insulation film 15 provided on the first protective insulation film 14, wherein the first protective insulation film 14 has a linear expansion coefficient which is between a linear expansion coefficient of a material of the second protective insulation film 15 and a linear expansion coefficient of a material of the interlayer insulation film 10.

摘要翻译： 本发明的半导体器件具有半导体元件区域17，该半导体元件区域17设置在碳化硅层3的一部分和保护环区域18之间，该保护环区域设置在围绕半导体元件区域17的碳化硅层3的另一部分中， 在与碳化硅层3的主表面垂直的方向上观察。半导体器件包括：层间绝缘膜10，其设置在半导体元件区域17中的碳化硅层3的主表面上，保护环 区域18，相对介电常数为20以上的层间绝缘膜10; 设置在保护环区域18中的层间绝缘膜上的第一保护绝缘膜14; 以及设置在第一保护绝缘膜14上的第二保护绝缘膜15，其中第一保护绝缘膜14具有在第二保护绝缘膜15的材料的线膨胀系数与线膨胀系数之间的线性膨胀系数 的层间绝缘膜10的材料。

公开(公告)号：US20110220917A1

公开(公告)日：2011-09-15

申请号：US13129825

申请日：2010-08-26

申请人： Masashi Hayashi ,  Koichi Hashimoto ,  Kazuhiro Adachi

发明人： Masashi Hayashi ,  Koichi Hashimoto ,  Kazuhiro Adachi

IPC分类号： H01L29/12 ,  H01L21/31

CPC分类号： H01L29/66068 ,  H01L21/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of the present invention has a semiconductor element region 17 that is provided in part of a silicon carbide layer 3 and a guard-ring region 18 that is provided in another part of the silicon carbide layer 3 surrounding the semiconductor element region 17 when seen in a direction perpendicular to a principal surface of the silicon carbide layer 3. The semiconductor device includes: an interlayer insulation film 10 which is provided on the principal surface of the silicon carbide layer 3 in the semiconductor element region 17 and the guard-ring region 18, the interlayer insulation film 10 having a relative dielectric constant of 20 or more; a first protective insulation film 14 provided on the interlayer insulation film in the guard-ring region 18; and a second protective insulation film 15 provided on the first protective insulation film 14, wherein the first protective insulation film 14 has a linear expansion coefficient which is between a linear expansion coefficient of a material of the second protective insulation film 15 and a linear expansion coefficient of a material of the interlayer insulation film 10.

摘要翻译： 本发明的半导体器件具有半导体元件区域17，该半导体元件区域17设置在碳化硅层3的一部分和保护环区域18之间，该保护环区域设置在围绕半导体元件区域17的碳化硅层3的另一部分中， 在与碳化硅层3的主表面垂直的方向上观察。半导体器件包括：层间绝缘膜10，其设置在半导体元件区域17中的碳化硅层3的主表面上，保护环 区域18，相对介电常数为20以上的层间绝缘膜10; 设置在保护环区域18中的层间绝缘膜上的第一保护绝缘膜14; 以及设置在第一保护绝缘膜14上的第二保护绝缘膜15，其中第一保护绝缘膜14具有在第二保护绝缘膜15的材料的线膨胀系数与线膨胀系数之间的线性膨胀系数 的层间绝缘膜10的材料。

公开(公告)号：US08933463B2

公开(公告)日：2015-01-13

申请号：US13780876

申请日：2013-02-28

申请人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

发明人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

IPC分类号： H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H03K17/14 ,  H01L29/45

CPC分类号： H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7805 ,  H01L29/7827 ,  H01L29/7828 ,  H03K17/145

摘要： A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括MISFET的半导体元件通过外延沟道层在相反方向上表现出二极管特性。 半导体元件包括：第一导电类型的碳化硅半导体衬底，第一导电类型的半导体层，第二导电类型的主体区域，第一导电类型的源极区域，与身体区域接触的外延沟道层， 源电极，栅极绝缘膜，栅电极和漏电极。 如果施加到栅电极的电压小于阈值电压，则半导体元件用作二极管，其中电流从源电极通过外延沟道层流到漏电极。 该二极管的导通电压的绝对值小于由体区和第一碳化硅半导体层形成的体二极管的导通电压。

公开(公告)号：US08283973B2

公开(公告)日：2012-10-09

申请号：US13389555

申请日：2010-08-09

申请人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

发明人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

IPC分类号： G05F3/02

CPC分类号： H01L29/7828 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7838 ,  H02M7/5387 ,  Y02B70/1483

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的半导体层20，第一导电类型的体区30 第二导电类型，第一导电类型的源极和漏极区域40和75，与主体区域接触的外延沟道层50，源极和漏极电极45和70，栅极绝缘膜60和栅电极65.如果 施加到MISFET的栅电极的电压小于阈值电压，半导体元件100用作二极管，其中电流通过外延沟道层50从源电极45流到漏极70。绝对值 该二极管的导通电压小于由体区和第一硅碳化物形成的体二极管的导通电压的导通电压 e半导体层。

公开(公告)号：US20120057386A1

公开(公告)日：2012-03-08

申请号：US13266271

申请日：2010-04-28

申请人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

发明人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

IPC分类号： H02M7/537 ,  H01L29/24

CPC分类号： H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7805 ,  H01L29/7827 ,  H01L29/7828 ,  H03K17/145

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的碳化硅半导体衬底10，半导体层20 第一导电类型的体区30，第一导电类型的源极区40，与体区接触的外延沟道层50，源电极45，栅极绝缘膜60， 栅电极65和漏电极70.如果施加到MISFET的栅电极的电压小于阈值电压，则半导体元件100用作二极管，其中电流从源电极45流到漏电极70通过 外延沟道层50.该二极管的导通电压的绝对值小于体二的导通电压的绝对值 由所述体区和所述第一碳化硅半导体层形成。

公开(公告)号：US20120139623A1

公开(公告)日：2012-06-07

申请号：US13389555

申请日：2010-08-09

申请人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

发明人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

IPC分类号： G05F3/02 ,  H01L29/78

CPC分类号： H01L29/7828 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7838 ,  H02M7/5387 ,  Y02B70/1483

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的半导体层20，第一导电类型的体区30 第二导电类型，第一导电类型的源极和漏极区域40和75，与主体区域接触的外延沟道层50，源极和漏极电极45和70，栅极绝缘膜60和栅电极65.如果 施加到MISFET的栅电极的电压小于阈值电压，半导体元件100用作二极管，其中电流通过外延沟道层50从源电极45流到漏极70。绝对值 该二极管的导通电压小于由体区和第一硅碳化物形成的体二极管的导通电压的导通电压 e半导体层。

公开(公告)号：US08410489B2

公开(公告)日：2013-04-02

申请号：US13266271

申请日：2010-04-28

申请人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

发明人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

IPC分类号： H01L29/24

CPC分类号： H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7805 ,  H01L29/7827 ,  H01L29/7828 ,  H03K17/145

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的碳化硅半导体衬底10，半导体层20 第一导电类型的体区30，第一导电类型的源极区40，与体区接触的外延沟道层50，源电极45，栅极绝缘膜60， 栅电极65和漏电极70.如果施加到MISFET的栅电极的电压小于阈值电压，则半导体元件100用作二极管，其中电流从源电极45流到漏电极70通过 外延沟道层50.该二极管的导通电压的绝对值小于体二的导通电压的绝对值 由所述体区和所述第一碳化硅半导体层形成。

公开(公告)号：US20090101918A1

公开(公告)日：2009-04-23

申请号：US12300352

申请日：2007-05-17

申请人： Masao Uchida ,  Koichi Hashimoto ,  Masashi Hayashi

发明人： Masao Uchida ,  Koichi Hashimoto ,  Masashi Hayashi

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/41741 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device includes: a semiconductor layer 10; a semiconductor region 15s of a first conductivity type defined on the surface 10s of the semiconductor layer; a semiconductor region 14s of a second conductivity type defined on the surface 10s of the semiconductor layer to surround the semiconductor region 15s; and a conductor 19 with a conductive surface 19s to contact with the semiconductor regions 15s and 14s. The semiconductor layer 10 includes silicon carbide. At least one of the semiconductor region 15s and the conductive surface 19s is not circular. The semiconductor region 15s and the conductive surface 19s are shaped such that as the degree of misalignment between the conductive surface 19s and the semiconductor region 15s increases from zero through one-third of the width of the conductive surface 19s, a portion of the profile of the conductive surface 19s that crosses the semiconductor region 15s has smoothly changing lengths.

摘要翻译： 半导体器件包括：半导体层10; 限定在半导体层的表面10s上的第一导电类型的半导体区域15s; 限定在半导体层的表面10s上以包围半导体区域15s的第二导电类型的半导体区域14s; 以及具有导电表面19s以与半导体区域15s和14s接触的导体19。 半导体层10包括碳化硅。 半导体区域15s和导电表面19s中的至少一个不是圆形的。 半导体区域15s和导电表面19s被成形为使得当导电表面19s和半导体区域15s之间的未对准程度从零增加到导电表面19s的宽度的三分之一时，轮廓的一部分 穿过半导体区域15s的导电表面19s具有平滑变化的长度。

公开(公告)号：US20100295062A1

公开(公告)日：2010-11-25

申请号：US12676212

申请日：2009-07-03

申请人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

发明人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region 15 of a first conductivity type defined on the surface of the semiconductor layer 10; a semiconductor region 14 of a second conductivity type, which is defined on the surface 10s of the semiconductor layer so as to surround the semiconductor region 15 of the first conductivity type; and a conductor 19 with a conductive surface 19s that contacts with the semiconductor regions 15 and 14 of the first and second conductivity types. On the surface 10s of the semiconductor layer, the semiconductor region 15 of the first conductivity type has at least one first strip portion 60 that runs along a first axis i. The width C1 of the semiconductor region 15 of the first conductivity type as measured along the first axis i is greater than the width A1 of the conductive surface 19s as measured along the first axis i. And the periphery of the conductive surface 19s crosses the at least one first strip portion 60, 61.

摘要翻译： 半导体器件包括：已经形成在衬底上的包含碳化硅的半导体层; 限定在半导体层10的表面上的第一导电类型的半导体区域15; 限定在半导体层的表面10s上以包围第一导电类型的半导体区域15的第二导电类型的半导体区域14; 以及具有与第一和第二导电类型的半导体区域15和14接触的导电表面19s的导体19。 在半导体层的表面10s上，第一导电类型的半导体区域15具有沿着第一轴线i延伸的至少一个第一条带部分60。 沿着第一轴线i测量的第一导电类型的半导体区域15的宽度C1大于沿着第一轴线i测量的导电表面19s的宽度A1。 并且导电表面19s的周边与至少一个第一条带部分60,61交叉。

公开(公告)号：US08129758B2

公开(公告)日：2012-03-06

申请号：US12676212

申请日：2009-07-03

申请人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

发明人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

IPC分类号： H01L27/10

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region 15 of a first conductivity type defined on the surface of the semiconductor layer 10; a semiconductor region 14 of a second conductivity type, which is defined on the surface 10s of the semiconductor layer so as to surround the semiconductor region 15 of the first conductivity type; and a conductor 19 with a conductive surface 19s that contacts with the semiconductor regions 15 and 14 of the first and second conductivity types. On the surface 10s of the semiconductor layer, the semiconductor region 15 of the first conductivity type has at least one first strip portion 60 that runs along a first axis i. The width C1 of the semiconductor region 15 of the first conductivity type as measured along the first axis i is greater than the width A1 of the conductive surface 19s as measured along the first axis i. And the periphery of the conductive surface 19s crosses the at least one first strip portion 60, 61.

摘要翻译： 半导体器件包括：已经形成在衬底上的包含碳化硅的半导体层; 限定在半导体层10的表面上的第一导电类型的半导体区域15; 限定在半导体层的表面10s上以包围第一导电类型的半导体区域15的第二导电类型的半导体区域14; 以及具有与第一和第二导电类型的半导体区域15和14接触的导电表面19s的导体19。 在半导体层的表面10s上，第一导电类型的半导体区域15具有沿着第一轴线i延伸的至少一个第一条带部分60。 沿着第一轴线i测量的第一导电类型的半导体区域15的宽度C1大于沿着第一轴线i测量的导电表面19s的宽度A1。 并且导电表面19s的周边与至少一个第一条带部分60,61交叉。