公开(公告)号：US20110195577A1

公开(公告)日：2011-08-11

申请号：US13019602

申请日：2011-02-02

申请人： Masato KUSHIBIKI ,  Eiichi Nishimura

发明人： Masato KUSHIBIKI ,  Eiichi Nishimura

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137 ,  H01L21/67069

摘要： A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds.

摘要翻译： 半导体器件制造方法包括：等离子体蚀刻步骤，用于蚀刻形成在容纳在处理室中的衬底上的蚀刻靶膜。 在等离子体蚀刻步骤中，将包含预定气体的气体混合物的处理气体供给到处理室，并且包括第一步骤的循环，其中将至少一个预定气体的流量设定为第一值 第一时间段和第二步骤，其中将流量设定为在第二时间段内与第一值不同的第二值连续重复至少三次而不去除等离子体。 第一时间段和第二时间段被设定为约1至15秒。

公开(公告)号：US20100240217A1

公开(公告)日：2010-09-23

申请号：US12721962

申请日：2010-03-11

申请人： Masato KUSHIBIKI ,  Eiichi Nishimura

发明人： Masato KUSHIBIKI ,  Eiichi Nishimura

IPC分类号： H01L21/311

CPC分类号： H01L21/0273 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

摘要： A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.

摘要翻译： 处理具有加工对象层和作为掩模层的有机膜的基板的处理方法包括使有机膜成矿化的矿化工序。 矿化方法包括使含硅气体吸附在有机膜的表面上的吸附方法; 以及用于氧化被吸收的待转化为氧化硅膜的含硅气体的氧化工艺。 使用一价氨基硅烷作为含硅气体。

公开(公告)号：US20110065049A1

公开(公告)日：2011-03-17

申请号：US12877218

申请日：2010-09-08

申请人： Masato KUSHIBIKI ,  Eiichi Nishimura

发明人： Masato KUSHIBIKI ,  Eiichi Nishimura

IPC分类号： G03F7/20

CPC分类号： G03F7/20 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/31608

摘要： A disclosed mask pattern forming method includes isotropically coating a surface of a resist pattern array having a predetermined line width with a silicon oxide film, embedding a gap in the resist pattern array coated by the silicon oxide film with a carbon film, removing the carbon film from the upper portion and etching back the carbon film while leaving the carbon film within the gap in any order, removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness in any order, and forming a first mask pattern array which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width, and arranged interposing a space width substantially the same as the predetermined line width with an asking process provided to the resist pattern array exposed from the removed silicon oxide film.

摘要翻译： 所公开的掩模图案形成方法包括用氧化硅膜均匀地涂布具有预定线宽的抗蚀剂图案阵列的表面，在由氧化硅膜涂覆的抗蚀剂图案阵列中用碳膜包埋间隙，除去碳膜 从上部开始蚀刻碳膜，同时以任何顺序将碳膜留在间隙内，除去剩余的碳膜并将抗蚀剂图案阵列的上部蚀刻回任何顺序具有预定的膜厚度，并且形成 具有预定宽度的中心部分的第一掩模图案阵列和夹着预定宽度的膜侧壁部分，并且布置有与预定线宽基本相同的空间宽度，并提供给从 去除氧化硅膜。

公开(公告)号：US20100068892A1

公开(公告)日：2010-03-18

申请号：US12558047

申请日：2009-09-11

申请人： Masato KUSHIBIKI ,  Eiichi Nishimura

发明人： Masato KUSHIBIKI ,  Eiichi Nishimura

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

摘要： In a substrate processing method of processing a substrate in which a processing target layer, an intermediate layer, and a mask layer are stacked one on top of another, the mask layer having an opening that partially exposes the intermediate layer, a thickness of the mask layer is increased by depositing deposits on an upper surface of the mask layer with plasma generated from a mixed gas of SF6 gas and a depositive gas represented in a general equation, CxHyFz (where, x, y, and z are positive integers).

摘要翻译： 在其中处理目标层，中间层和掩模层层叠在一起的衬底的衬底处理方法中，具有部分地暴露中间层的开口的掩模层，掩模的厚度 通过在SF6气体和通式（C x H y F z（其中x，y和z是正整数）表示的沉积气体的混合气体产生的等离子体中，在掩模层的上表面上沉积沉积物来增加层。

公开(公告)号：US20120244718A1

公开(公告)日：2012-09-27

申请号：US13428212

申请日：2012-03-23

申请人： Eiichi NISHIMURA ,  Masato KUSHIBIKI ,  Fumiko YAMASHITA

发明人： Eiichi NISHIMURA ,  Masato KUSHIBIKI ,  Fumiko YAMASHITA

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/3065

摘要： Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C4F6 gas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.

摘要翻译： 公开了一种当在氧化物膜上形成高纵横比孔或沟槽时能够防止蚀刻速率劣化的衬底处理方法。 当通过使用具有开口的硅制成的硬掩模层蚀刻在晶片上形成的氧化膜，在氧化物膜上形成高纵横比的孔或沟槽时，使用从 处理含有C4F6气体和甲烷气体的气体。 随后，通过蚀刻生成并沉积在氧化膜的孔的内表面上的反应产物用从含有氧气的处理气体产生的等离子体等离子化，并且依次重复蚀刻和灰化过程。

公开(公告)号：US20120196387A1

公开(公告)日：2012-08-02

申请号：US13415363

申请日：2012-03-08

申请人： Masato KUSHIBIKI ,  Eiichi NISHIMURA

发明人： Masato KUSHIBIKI ,  Eiichi NISHIMURA

IPC分类号： H01L21/66

CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136

摘要： The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.

摘要翻译： 本发明提供一种基板处理方法，用于处理至少包括依次堆叠的处理层，中间层和掩模层的基板。 掩模层包括被配置为暴露中间层的一部分的孔。 基板处理方法包括：材料沉积步骤，其在所述孔的侧表面上沉积材料，并且通过用沉积气体产生的等离子体蚀刻所述中间层的暴露部分来暴露所述处理层的一部分;以及蚀刻步骤 蚀刻处理层的暴露部分。

公开(公告)号：US20100233885A1

公开(公告)日：2010-09-16

申请号：US12720197

申请日：2010-03-09

申请人： Masato KUSHIBIKI ,  Eiichi Nishimura

发明人： Masato KUSHIBIKI ,  Eiichi Nishimura

IPC分类号： H01L21/316

CPC分类号： H01L21/32139 ,  H01J37/32082 ,  H01J37/32779 ,  H01L21/0273 ,  H01L21/0337

摘要： A method for processing a substrate including a processing target layer and an organic film, include: a deposition/trimming process of forming a reinforcement film on a surface of the organic film and, at the same time, trimming a line width of a line portion of the organic film constituting an opening pattern. The deposition/trimming process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto the surface of the organic film and an oxidation process in which the line width of the organic film is trimmed while the adsorbed silicon-containing gas is converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.

摘要翻译： 一种处理包括处理目标层和有机膜的基板的方法包括：在有机膜的表面上形成增强膜的沉积/修整工艺，并且同时修剪线部分的线宽 构成开口图案的有机薄膜。 沉积/修整方法包括使含硅气体吸附到有机膜的表面上的吸附工艺和在吸附的含硅气体被转化时有机膜的线宽被修整的氧化工艺 成为氧化硅膜。 使用一价氨基硅烷作为含硅气体。

公开(公告)号：US20070224828A1

公开(公告)日：2007-09-27

申请号：US11691011

申请日：2007-03-26

申请人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

发明人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/306

CPC分类号： H01L21/32137

摘要： A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

摘要翻译： 等离子体蚀刻装置被布置成通过使用Cl 2/2 / SF 6 / N 2 N来进行用于蚀刻多晶硅膜的主蚀刻 通过激发Cl 2 O 2气体，SF 6气体和N 2气体获得的等离子体，以及用于蚀刻多晶硅膜的过蚀刻 使用通过激发Cl 2气体，HBr气体和CF 4