公开(公告)号：US06479312B1

公开(公告)日：2002-11-12

申请号：US09869266

申请日：2001-06-27

申请人： Masato Yamada ,  Susumu Higuchi ,  Kousei Yumoto ,  Makoto Kawasaki ,  Ken Aihara

发明人： Masato Yamada ,  Susumu Higuchi ,  Kousei Yumoto ,  Makoto Kawasaki ,  Ken Aihara

IPC分类号： H01L2100

CPC分类号： H01L33/025 ,  H01L33/30 ,  Y10S438/918

摘要： By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×1016/cm3 at a p-n junction portion between an n-type GaP layer 12 and a p-type GaP layer 14, the luminance of the GaP light emitting device can be improved by as much as 20 to 30% over the conventional one. Suppressing the donor concentration and the acceptor concentration in the low carrier concentration layer 13 below 1×1016/cm3 inevitably gives a carrier concentration, which is expressed as a difference between both concentrations, lower than 1×1016/cm3 accordingly. The emission efficiency upon injection of electrons or holes can be improved by suppressing the concentration of the donor which serves as non-emissive center below 1×1016/cm3 to thereby extend the carrier lifetime; and by concomitantly suppressing the carrier concentration at a level significantly lower than that in the adjacent layers 12 and 14.

摘要翻译： 通过在n型GaP层12和p型GaP层14之间的pn结部分提供具有供体浓度和受主浓度两者的氮掺杂低载流子浓度层13，其控制在1×1016 / cm3以下， 的GaP发光器件可以比传统的发光器件提高多达20至30％。 抑制低载体浓度层13中的供体浓度和受体浓度低于1×10 16 / cm 3时，不可避免地会产生一个载流子浓度，其表示为两个浓度之间的差值，相应地低于1×10 16 / cm 3。 通过抑制作为不发光中心的供体的浓度低于1×10 16 / cm 3，可以提高注入电子或空穴的发射效率，从而延长载体寿命; 并且通过伴随地将载流子浓度抑制在显着低于相邻层12和14中的水平。

公开(公告)号：US6143071A

公开(公告)日：2000-11-07

申请号：US345098

申请日：1999-06-30

申请人： Ken Aihara ,  Hiroshi Takeno

发明人： Ken Aihara ,  Hiroshi Takeno

IPC分类号： H01L21/322 ,  C30B33/00 ,  H01L21/324 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B33/00

摘要： There is disclosed a method for heat treatment of a silicon substrate produced by the CZ method by utilizing a rapid thermal annealer, wherein the heat treatment is performed under an atmosphere composed of 100% nitrogen, or 100% oxygen, or a mixed atmosphere of oxygen and nitrogen by heating the silicon substrate to a maximum holding temperature within a range of from 1125.degree. C. to the melting point of silicon, and holding the substrate at that maximum holding temperature for a holding time of 5 seconds or more, and then the substrate is rapidly cooled at a cooling rate of 8.degree. C./second or more from the maximum holding temperature. In the method, the amount of oxygen precipitation nuclei in the substrate can be controlled by changing the maximum holding temperature and the holding time. The present invention provide a method for heat treatment of a silicon substrate produced by the CZ method by utilizing an RTA apparatus, which can provide a silicon substrate having a desired oxygen precipitation characteristic without controlling oxygen concentration in the silicon substrate, and an epitaxial wafer utilizing a substrate heat-treated by the method.

摘要翻译： 公开了通过利用快速热退火炉通过CZ法制造的硅衬底的热处理方法，其中热处理在由100％氮气或100％氧气组成的气氛或氧气的混合气氛下进行 和氮气，通过将硅衬底加热至最高保持温度在1125℃至硅的熔点，并将衬底保持在该最大保持温度下5秒或更长的保持时间，然后将 基板以最高保持温度以8℃/秒以上的冷却速度快速冷却。 在该方法中，可以通过改变最大保持温度和保持时间来控制衬底中的氧沉淀核的量。 本发明提供一种通过利用RTA装置通过CZ方法制造的硅衬底的热处理方法，其可以提供具有期望的氧沉淀特性的硅衬底而不控制硅衬底中的氧浓度，以及利用外延晶片 通过该方法热处理的基板。

公开(公告)号：US20080038526A1

公开(公告)日：2008-02-14

申请号：US11632719

申请日：2005-07-05

申请人： Fumitaka Kume ,  Tomosuke Yushida ,  Ken Aihara ,  Ryoji Hoshi ,  Satoshi Tobe ,  Naohisa Toda ,  Fumio Tahara

发明人： Fumitaka Kume ,  Tomosuke Yushida ,  Ken Aihara ,  Ryoji Hoshi ,  Satoshi Tobe ,  Naohisa Toda ,  Fumio Tahara

IPC分类号： B32B7/02 ,  C30B15/00

CPC分类号： H01L21/3225 ,  C30B25/20 ,  C30B29/06 ,  C30B33/02 ,  Y10T428/24992

摘要： A silicon epitaxial wafer 100 formed by growing a silicon epitaxial layer 2 on a silicon single crystal substrate 1, produced by a CZ method, and doped with boron so that a resistivity thereof is in the range of 0.009 Ω·cm or higher and 0.012 Ω·cm or lower. The silicon single crystal substrate 1 has a density of the oxygen precipitation nuclei of 1×1010 cm−3 or higher. A width of a no-oxygen-precipitation-nucleus-forming-region 15, formed between the silicon epitaxial layer 2 and the silicon single substrate 1, is in the range of more than 0 μm and less than 10 μm. Thereby, provided is a silicon epitaxial wafer using a boron doped p+ CZ substrate, wherein a formed width of no-oxygen-precipitation-nucleus-forming-region is reduced sufficiently, and oxygen precipitates can be formed having a density sufficient enough to exert an IG effect.

摘要翻译： 通过在硅单晶衬底1上生长硅外延层2而形成的硅外延晶片100，其通过CZ方法制造并掺杂硼，使其电阻率在0.009Ω.cm以上且0.012Ω .cm或更低。 硅单晶衬底1的氧沉淀核的密度为1×10 10 -3 -3以上。 在硅外延层2和硅单基板1之间形成的无氧析出核形成区域15的宽度在大于0μm且小于10μm的范围内。 由此，提供了使用硼掺杂的P + CZ衬底的硅外延晶片，其中形成的无氧沉淀 - 核形成区域的宽度被充分降低，并且可以形成氧沉淀 具有足以施加IG效应的密度。

公开(公告)号：US07189293B2

公开(公告)日：2007-03-13

申请号：US10482099

申请日：2002-06-25

申请人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Hiroshi Takeno ,  Ken Aihara

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Hiroshi Takeno ,  Ken Aihara

IPC分类号： C30B33/02

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： The present invention is a method of producing an annealed wafer wherein a silicon single crystal wafer having a diameter of 200 mm or more produced by the Czochralski (CZ) method is subjected to a high temperature heat treatment in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100–1350° C. for 10–600 minutes, and before the high temperature heat treatmen, a pre-annealing is performed at a temperature less than the temperature of the high temperature heat treatment, so that the growth of slip dislocations is suppressed by growing oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein the generation and growth of slip dislocations generated in a high temperature heat treatment are suppressed and the defect density in the wafer surface layer is lowered even in the case of a silicon single crystal wafer having a large diameter of 200 mm or more, and the annealed wafer.

摘要翻译： 本发明是一种退火晶片的制造方法，其中通过Czochralski（CZ）方法制造的直径为200mm以上的硅单晶晶片在氩气气氛中进行高温热处理， 氢气或其混合气体在1100-1350℃的温度下进行10-600分钟，在高温热处理之前，在低于高温热的温度下进行预退火 从而通过生长氧化物沉淀物来抑制滑移位错的生长。 因此，提供了一种制造退火晶片的方法，其中抑制了在高温热处理中产生的滑移位错的产生和生长，并且即使在硅单晶晶片的情况下晶片表面层中的缺陷密度也降低 具有大直径为200mm以上的退火晶片。

公开(公告)号：US20060031107A1

公开(公告)日：2006-02-09

申请号：US11190423

申请日：2005-07-27

申请人： Ken Aihara ,  Norio Hibiki

发明人： Ken Aihara ,  Norio Hibiki

IPC分类号： G06F9/44

CPC分类号： G06Q10/04 ,  G06Q10/0635 ,  G06Q10/06375 ,  G06Q30/02 ,  G06Q30/0201 ,  G06Q40/06

摘要： An advertisement portfolio model reduces risk in an advertisement transaction for an individual advertisement product. First, a relational expression is used to determine a comprehensive advertisement risk management index for statistically representing a maximum unexpected loss amount to which the advertisement product is subject at a certain probability during the advertising campaign period. Second, a plurality of correlation coefficient data of the advertisement product are calculated from the observational data of the advertisement product. Third, an optimal combination of the advertisement products is determined in order to analyze at least either one of an effect, an efficiency or a risk of the advertisement product based on the relational expression for determining the comprehensive advertisement risk management index and the plurality of correlation coefficient data or the observational data which has taken the correlation into account indirectly, such that a sponsor can determine an optimal combination of the advertisement products.

摘要翻译： 广告组合模型降低个人广告产品的广告交易中的风险。 首先，使用关系表达式来确定综合广告风险管理指数，用于在广告活动期间以一定概率统计代表广告产品所受到的最大意外损失量。 第二，根据广告产品的观察数据计算广告产品的多个相关系数数据。 第三，确定广告产品的最佳组合，以便基于用于确定综合广告风险管理指标的关系表达式和多个相关性来分析广告产品的效果，效率或风险中的至少一个 系数数据或间接考虑相关性的观察数据，使得赞助者可以确定广告产品的最佳组合。

公开(公告)号：US20070269338A1

公开(公告)日：2007-11-22

申请号：US11632720

申请日：2005-06-27

申请人： Fumitaka Kume ,  Tomosuke Yoshida ,  Ken Aihara ,  Ryoji Hoshi ,  Satoshi Tobe ,  Naohisa Toda ,  Fumio Tahara

发明人： Fumitaka Kume ,  Tomosuke Yoshida ,  Ken Aihara ,  Ryoji Hoshi ,  Satoshi Tobe ,  Naohisa Toda ,  Fumio Tahara

IPC分类号： C30B15/00 ,  C22C29/00 ,  C30B15/14

CPC分类号： H01L21/3225 ,  C30B25/20 ,  C30B29/06 ,  C30B33/02 ,  H01L21/02381 ,  H01L21/02532

摘要： A silicon epitaxial wafer 100 is formed by growing a silicon epitaxial layer 2 on a silicon single crystal substrate 1, produced by means of a CZ method, and doped with boron so that a resistivity thereof is less than 0.018 Ω·cm. The silicon single crystal substrate 1 has a density of bulk stacking faults 13 in the silicon single crystal substrate 1 in the range of 1×108 cm−3 or higher and 3×109 cm−3 or lower. Thereby, provided is a silicon epitaxial wafer having a boron doped p+ CZ substrate with a resistivity of 0.018Ω·cm or lower, and a state of formation of oxygen precipitates can be adjusted adequately so as to secure a sufficient IG effect and to suppress a problem of bow and deformation of a substrate, despite that sizes of oxygen precipitates is so small to be observed accurately.

摘要翻译： 通过在Si单晶衬底1上生长硅外延层2，通过CZ法生长并掺杂硼，使其电阻率小于0.018Ω·cm，形成硅外延晶片100。 硅单晶衬底1在硅单晶衬底1中的体积堆垛层错密度为1×10 -3 -3以上且3×10 6 > 9 -3 或更低。 因此，提供具有电阻率为0.018Omega.cm以下的具有硼掺杂的P + CZ基板的硅外延晶片，并且可以适当地调节氧沉淀物的形成状态，以便确保 足够的IG效应并且抑制基板的弯曲和变形的问题，尽管氧沉淀物的尺寸如此小以被准确地观察。

公开(公告)号：US06544656B1

公开(公告)日：2003-04-08

申请号：US09674841

申请日：2000-11-07

申请人： Takao Abe ,  Ken Aihara ,  Shoji Akiyama ,  Tetsuya Igarashi ,  Weifeng Qu ,  Yoshinori Hayamizu ,  Shigeru Saito

发明人： Takao Abe ,  Ken Aihara ,  Shoji Akiyama ,  Tetsuya Igarashi ,  Weifeng Qu ,  Yoshinori Hayamizu ,  Shigeru Saito

IPC分类号： C30B2906

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T428/21

摘要： A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.

摘要翻译： 通过使用Czochralski法生长电阻率为100欧姆·厘米或更高的初始间隙氧浓度为10〜25ppma的硅单晶锭，将硅单晶锭加工成晶片，生产硅晶片， 晶片进行氧析出热处理，使得晶片中的残留间隙氧浓度应变为8ppma以下。 如上所述制造的硅晶片即使在器件制造等中进行热处理之后也几乎没有电阻降低。此外，如果制造硅晶片并进行热处理，使得晶片应具有上述初始间隙氧浓度和残留量 间隙氧浓度，随后的热处理过程中的滑移位错被阻止，而与电阻率无关。 此外，通过在本发明的硅晶片的表面上形成外延层，可以制造不含滑移位错等的高电阻率外延晶片，并可用于各种器件。

公开(公告)号：US06478883B1

公开(公告)日：2002-11-12

申请号：US09529661

申请日：2000-04-18

申请人： Masaro Tamatsuka ,  Ken Aihara ,  Katsuhiko Miki ,  Hiroshi Takeno ,  Yoshinori Hayamizu

发明人： Masaro Tamatsuka ,  Ken Aihara ,  Katsuhiko Miki ,  Hiroshi Takeno ,  Yoshinori Hayamizu

IPC分类号： H01L2930

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225

摘要： A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits high gettering ability in spite of its suppressed oxygen concentration, and an epitaxial silicon wafer in which an epitaxial layer grown by using the aforementioned wafer as a substrate wafer has an extremely low heavy metal impurity concentration are produced with high productivity and supplied. The present invention relates to a boron-doped silicon single crystal wafer having a resistivity of from 10 m&OHgr;·cm to 100 m&OHgr;·cm, an antimony-doped silicon single crystal wafer, or a phosphorus-doped silicon single crystal wafer, which are produced by slicing a silicon single crystal ingot grown by the Czochralski method with nitrogen doping. The present invention also relates to an epitaxial wafer, wherein an epitaxial layer is formed on a surface of the aforementioned wafers. The present invention further relates to method for producing them.

摘要翻译： 用于外延生长的硅晶片由高掺硼硅单晶晶片，锑掺杂硅单晶晶片或磷掺杂硅单晶晶片组成，其允许容易的氧沉淀并且表现出高的吸杂能力 抑制氧浓度，并且以高生产率生产其中通过使用上述晶片生长的外延层作为基板晶片具有极低重金属杂质浓度的外延硅晶片。 本发明涉及电阻率为10mOMEGA.cm至100mOMEGA.cm的硼掺杂硅单晶晶片，掺锑硅单晶晶片或磷掺杂硅单晶晶片，其生产 通过用氮掺杂切片通过Czochralski法生长的硅单晶锭。 本发明还涉及外延晶片，其中在上述晶片的表面上形成外延层。 本发明还涉及它们的制造方法。

公开(公告)号：US6162708A

公开(公告)日：2000-12-19

申请号：US310045

申请日：1999-05-11

申请人： Masaro Tamatsuka ,  Ken Aihara ,  Tomosuke Yoshida

发明人： Masaro Tamatsuka ,  Ken Aihara ,  Tomosuke Yoshida

IPC分类号： C30B15/00 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10S438/916

摘要： There is disclosed a method for producing an epitaxial silicon single crystal wafer comprising the steps of growing a silicon single crystal ingot wherein nitrogen is doped by Czochralski method, slicing the silicon single crystal ingot to provide a silicon single crystal wafer, and forming an epitaxial layer in the surface layer portion of the silicon single crystal wafer. There can be manufactured easily and in high productivity an epitaxial silicon monocrystal wafer which has high gettering capability when a substrate having a low boron concentration is used, a low concentration of heavy metal impurity, and an excellent crystallinity.

摘要翻译： 公开了一种用于制造外延硅单晶晶片的方法，包括以下步骤：生长其中通过切克劳斯基法掺杂氮的硅单晶锭，将硅单晶锭切片以提供硅单晶晶片，以及形成外延层 在硅单晶晶片的表层部分。 当使用低硼浓度的底物，低浓度的重金属杂质和优异的结晶度时，可以容易且高生产率地制造外延硅单晶晶片，其具有高吸杂能力。

公开(公告)号：US07713851B2

公开(公告)日：2010-05-11

申请号：US11660764

申请日：2005-08-03

申请人： Fumitaka Kume ,  Tomosuke Yoshida ,  Ken Aihara ,  Ryoji Hoshi ,  Satoshi Tobe ,  Naohisa Toda ,  Fumio Tahara

发明人： Fumitaka Kume ,  Tomosuke Yoshida ,  Ken Aihara ,  Ryoji Hoshi ,  Satoshi Tobe ,  Naohisa Toda ,  Fumio Tahara

IPC分类号： H01L21/20

CPC分类号： H01L21/02052 ,  H01L21/3225

摘要： A silicon epitaxial layer 2 is grown in vapor phase on a silicon single crystal substrate 1 manufactured by the Czochralski method, and doped with boron so as to adjust the resistivity to 0.02 Ω·cm or below, oxygen precipitation nuclei 11 are formed in the silicon single crystal substrate 1, by carrying out annealing at 450° C. to 750° C., in an oxidizing atmosphere, for a duration of time allowing formation of a silicon oxide film only to as thick as 2 nm or below on the silicon epitaxial layer 2 as a result of the annealing, and thus-formed silicon oxide film 3 is etched as the first cleaning after the low-temperature annealing, using a cleaning solution. By this process, the final residual thickness of the silicon oxide film can be suppressed only to a level equivalent to native oxide film, without relying upon the hydrofluoric acid cleaning.

摘要翻译： 在由Czochralski法制造的硅单晶衬底1上以气相生长硅外延层2，并用硼掺杂以将电阻率调节至0.02＆OHgr·cm或更低，氧沉淀核11形成在 硅单晶衬底1，通过在氧化气氛中在450℃至750℃进行退火，持续时间允许在硅上形成仅2nm或更小的氧化硅膜 作为退火的结果的外延层2，使用清洗液，将低温退火后的第一次清洗作为第一清洗来蚀刻所形成的氧化硅膜3。 通过该方法，氧化硅膜的最终剩余厚度可以仅被抑制到与天然氧化膜相当的水平，而不依赖于氢氟酸清洗。