公开(公告)号：US4993481A

公开(公告)日：1991-02-19

申请号：US412837

申请日：1989-09-26

申请人： Masayuki Kamimoto ,  Yoshiyuki Abe ,  Yoshio Takahashi ,  Ryuji Sakamoto ,  Kotaro Tanaka ,  Akira Negishi ,  Hidetoshi Yamauchi ,  Kiyotaka Tsukada ,  Yoshimi Ohashi

发明人： Masayuki Kamimoto ,  Yoshiyuki Abe ,  Yoshio Takahashi ,  Ryuji Sakamoto ,  Kotaro Tanaka ,  Akira Negishi ,  Hidetoshi Yamauchi ,  Kiyotaka Tsukada ,  Yoshimi Ohashi

IPC分类号： F28D20/00 ,  C04B38/00 ,  F28D20/02

CPC分类号： F28D20/02 ,  C04B38/0006 ,  F28D20/023 ,  Y02E60/145

摘要： A thermal storage unit has a thermal storage material which performs heat exchange through a fluid filled in a thermal storage body arranged within a vessel having an opening communicated to outside. The thermal storage body is a porous ceramic molding which contains the thermal storage medium.

摘要翻译： 热存储单元具有通过布置在具有与外部连通的开口的容器内的蓄热体中填充的流体进行热交换的蓄热材料。 储热体是含有热存储介质的多孔陶瓷模制件。

公开(公告)号：US06879278B2

公开(公告)日：2005-04-12

申请号：US10854297

申请日：2004-05-26

申请人： Takamoto Watanabe ,  Takayuki Torigoe ,  Koji Adumi ,  Hidetoshi Yamauchi

发明人： Takamoto Watanabe ,  Takayuki Torigoe ,  Koji Adumi ,  Hidetoshi Yamauchi

IPC分类号： H03K5/135 ,  H03M1/12 ,  H03M1/20 ,  H03M1/50 ,  H03M1/60

CPC分类号： H03M1/206 ,  G04F10/005 ,  H03M1/502

摘要： An A/D converter for driving a plurality of delay units forming a pulse delay circuit by an analog input signal Vin and digitalizing the number of delay units through which a pulse signal passes in the pulse delay circuit at predetermined timings, provided with a plurality of pulse position digitalizing units used for A/D conversion and inputting delay pulses from the delay units of the pulse delay circuit to the pulse position digitalizing units through an inverter group comprised of inverters with different inversion levels (switching threshold level) by different input timings. The digital data obtained by the pulse position digitalizing units are added by an adder.

摘要翻译： 一种A / D转换器，用于通过模拟输入信号Vin驱动形成脉冲延迟电路的多个延迟单元，并且将预定时间脉冲信号通过脉冲信号的延迟单元的数量化，并设置多个延迟单元 用于A / D转换的脉冲位置数字化单元，并且通过由不同输入定时具有不同反相电平（开关阈值电平）的反相器组成的反相器组将延迟脉冲从脉冲延迟电路的延迟单元输入到脉冲位置数字化单元。 由脉冲位置数字化单元获得的数字数据由加法器相加。

公开(公告)号：US4664946A

公开(公告)日：1987-05-12

申请号：US858834

申请日：1986-04-29

申请人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

发明人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

IPC分类号： H01L21/48 ,  H01L23/15 ,  B05D5/12

CPC分类号： H01L21/4807 ,  H01L23/15 ,  H01L2924/0002

摘要： This invention relates to a method of producing a silicon carbide substrate having desirable electrical insulation properties. The silicon carbide substrate is produced by applying to a surface of a silicon carbide plate a film-forming composition which consists essentially of at least one oxide or substance with produces an oxide by decomposition of an element selected from the group consisting of aluminum, phosphorus, boron, germanium, arsenic, antimony, bismuth, vanadium, zinc, lead, cadmium, sodium, potassium, lithium, beryllium, calcium, magnesium, barium and strontium and heating the silicon carbide body in an oxidizing atmosphere to form a eutectic oxide layer thereon.

摘要翻译： 本发明涉及一种具有所需电绝缘性能的碳化硅基板的制造方法。 通过向碳化硅板的表面施加成膜组合物来制造碳化硅衬底，所述成膜组合物基本上由至少一种氧化物或物质组成，所述氧化物或物质通过分解选自铝，磷， 硼，锗，砷，锑，铋，钒，锌，铅，镉，钠，钾，锂，铍，钙，镁，钡和锶，并在氧化气氛中加热碳化硅体以在其上形成共晶氧化物层 。

公开(公告)号：US5192719A

公开(公告)日：1993-03-09

申请号：US768337

申请日：1991-09-30

申请人： Hidetoshi Yamauchi ,  Haruhisa Hasegawa ,  Yasuji Hiramatsu

发明人： Hidetoshi Yamauchi ,  Haruhisa Hasegawa ,  Yasuji Hiramatsu

IPC分类号： C04B35/565

CPC分类号： C04B35/565

摘要： A high-density and high-strength .beta.-type silicon carbide sintered body, in which crystal grains are made uniform and fine by adjusting the compounding ratio of the sintering aid and further taking a special means at the sintering step while suppressing the inclusion of .alpha.-SiC into the starting powder as far as possible during the production of the silicon carbide sintered body.

摘要翻译： 高密度，高强度的β型碳化硅烧结体，其中通过调节烧结助剂的配合比例，并且在烧结步骤中进一步采取特殊方法，使晶粒均匀且细微，同时抑制α -SiC在碳化硅烧结体的生产过程中尽可能地进入起始粉末。

公开(公告)号：US4882455A

公开(公告)日：1989-11-21

申请号：US229733

申请日：1988-08-02

申请人： Yasuyuki Sato ,  Shinji Saito ,  Hidetoshi Yamauchi

发明人： Yasuyuki Sato ,  Shinji Saito ,  Hidetoshi Yamauchi

IPC分类号： H01L23/14 ,  H01L23/15 ,  H05K1/03

CPC分类号： H05K1/0306 ,  H01L23/145 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K2201/0116 ,  Y10T428/24917 ,  Y10T428/249956 ,  Y10T428/249978

摘要： An electronic circuit substrate having excellent machinability and dimensional accuracy is disclosed, which comprises a porous ceramic sintered body having a three-dimensional network structure and contains permeable pores, and a resin filled into the permeable pores.

摘要翻译： 公开了一种具有优异的机械加工性和尺寸精度的电子电路基板，其包括具有三维网状结构且包含可渗透孔的多孔陶瓷烧结体和填充到可渗透孔中的树脂。

公开(公告)号：US4499147A

公开(公告)日：1985-02-12

申请号：US451940

申请日：1982-12-21

申请人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

发明人： Ryo Enomoto ,  Hidetoshi Yamauchi ,  Shoji Tanikawa

IPC分类号： H01L21/48 ,  H01L23/15 ,  C03C3/12

CPC分类号： H01L21/4807 ,  H01L23/15 ,  H01L2924/0002

摘要： A silicon carbide substrate having excellent electrical insulation properties is disclosed. The silicon carbide substrate is produced by closely adhering to a surface of a silicon carbide plate body a eutectic oxide layer comprising SiO.sub.2 produced by partial oxidation of the plate body and at least one oxide selected from Al.sub.2 O.sub.3, P.sub.2 O.sub.5, B.sub.2 O.sub.3, GeO.sub.2, As.sub.2 O.sub.3, Sb.sub.2 O.sub.3, Bi.sub.2 O.sub.3, V.sub.2 O.sub.5, ZnO, PbO, Pb.sub.3 O.sub.4, PbO.sub.2, CdO, Na.sub.2 O, K.sub.2 O, BeO, CaO, MgO, BaO and SrO.

摘要翻译： 公开了具有优异的电绝缘性能的碳化硅衬底。 碳化硅衬底通过紧密地附着到碳化硅板体的表面上，该共晶氧化物层包含通过板体的部分氧化产生的SiO和从Al 2 O 3，P 2 O 5，B 2 O 3，GeO 2，As 2 O 3，Sb 2 O 3中选择的至少一种氧化物 ，Bi2O3，V2O5，ZnO，PbO，Pb3O4，PbO2，CdO，Na2O，K2O，BeO，CaO，MgO，BaO和SrO。