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公开(公告)号：US20120065116A1
公开(公告)日：2012-03-15
申请号：US13321450
申请日：2009-05-21
IPC分类号： C11D7/08
CPC分类号： C11D3/042 , C11D7/08 , C11D11/0047 , H01L21/02065
摘要： Disclosed is a cleaning liquid which is capable of cleaning an object to be cleaned, to the surface of which cerium oxide adheres, by dissolving and removing cerium oxide in the form of cerium ions. A cleaning method using the cleaning liquid is also disclosed. The cleaning liquid for removing cerium oxide is characterized by containing hydrogen fluoride, at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, acetic acid, phosphoric acid, iodic acid and hydrobromic acid, and water. The cleaning liquid is also characterized by dissolving and removing cerium oxide in the form of cerium ions.
摘要翻译： 公开了一种能够通过溶解和除去铈离子形式的氧化铈，能够将被清洁物体清洁到氧化铈表面的清洗液。 还公开了使用清洗液的清洗方法。 用于除去氧化铈的清洗液的特征在于含有氟化氢，至少一种选自盐酸，硝酸，硫酸，乙酸，磷酸，碘酸和氢溴酸的酸和水。 清洗液的特征还在于以铈离子的形式溶解和去除氧化铈。
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公开(公告)号：US20120056126A1
公开(公告)日：2012-03-08
申请号：US13320171
申请日：2009-05-21
申请人： Masayuki Miyashita , Takanobu Kujime , Keiichi Nii
发明人： Masayuki Miyashita , Takanobu Kujime , Keiichi Nii
CPC分类号： H01L21/31111 , C09K13/08
摘要： Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.
摘要翻译： 本发明提供一种精细加工剂，其能够对至少层叠有二氧化硅膜和氮化硅膜的叠层膜进行精细加工，能够选择性地精细加工二氧化硅膜。 还提供了利用精细加工剂的精细加工方法。 该微加工剂的特征在于：（a）0.01-15.0重量％氟化氢和/或0.1-40.0重量％氟化铵，（b）水和（c）0.001-10.00重量％的水溶性聚合物 由丙烯酸，丙烯酸铵，丙烯酸酯，丙烯酰胺，苯乙烯磺酸，苯乙烯磺酸铵和苯乙烯磺酸酯组成的组中。
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公开(公告)号：US08974685B2
公开(公告)日：2015-03-10
申请号：US13320171
申请日：2009-05-21
申请人： Masayuki Miyashita , Takanobu Kujime , Keiichi Nii
发明人： Masayuki Miyashita , Takanobu Kujime , Keiichi Nii
IPC分类号： C03C15/00 , H01L21/311 , C09K13/08
CPC分类号： H01L21/31111 , C09K13/08
摘要： Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.
摘要翻译： 本发明提供一种精细加工剂，其能够对至少层叠有二氧化硅膜和氮化硅膜的叠层膜进行精细加工，能够选择性地精细加工二氧化硅膜。 还提供了利用精细加工剂的精细加工方法。 该精细加工剂的特征在于：（a）0.01-15.0重量％氟化氢和/或0.1-40.0重量％氟化铵，（b）水和（c）0.001-10.00重量％水溶性聚合物 由丙烯酸，丙烯酸铵，丙烯酸酯，丙烯酰胺，苯乙烯磺酸，苯乙烯磺酸铵和苯乙烯磺酸酯组成的组中。
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4.发明授权Stainless steel having passive fluoride film formed thereon and equipment manufactured therefrom 失效在其上形成钝态氟化物膜的不锈钢及由其制造的设备公开(公告)号：US06699603B1
公开(公告)日：2004-03-02
申请号：US09857117
申请日：2001-12-26
IPC分类号： C23C806
CPC分类号： C23C8/80 , C23C8/08 , Y10T428/31678
摘要： A stainless steel with a passive state fluorinated film formed thereon, which is easy to construct and does not produce particles even when it is welded, and a device using the same. The stainless steel does not cause leakage even when said film is formed on a sealing surface of a joint and a valve seat surface. The stainless steel is characterized in that at least a part of the surface coated with a passive state fluorinated film not thicker than 190Å consisting of a metal fluoride as a main component.
摘要翻译： 其上形成有被动状态氟化膜的不锈钢，即使在被焊接时也容易构造并且不产生颗粒，以及使用其的装置。 即使所述膜形成在接头的密封面和阀座面上，不锈钢也不会引起泄漏。 不锈钢的特征在于，涂覆有不大于190的被动状态氟化膜的表面的至少一部分由以金属氟化物为主要成分组成。
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5.发明授权公开(公告)号：US06905606B1
公开(公告)日：2005-06-14
申请号：US09890470
申请日：2000-01-28
CPC分类号： C02F1/5245 , C02F1/66 , C02F2101/14 , C02F2103/346 , Y10S210/915
摘要： A method for removing calcium from water containing a high concentration of calcium bicarbonate, permitting a reduction of the calcium bicarbonate equivalent to 200-500 ppm calcium to the level in accordance with the water quality standards for industrial use, not by a method using a large amount of heat and power as heating and deairing, but by a simple chemical treatment. Calcium hydroxide is added to waste water containing a high concentration of calcium in a form of calcium bicarbonate for making them react with each other, and removing calcium by fixing it to calcium bicarbonate.
摘要翻译： 一种从含有高浓度碳酸氢钙的水中除去钙的方法，允许将等于200-500ppm钙的碳酸氢钙相对于工业用水的水质标准降低到水平，而不是使用大的方法 热量和热量作为加热和脱气，而是通过简单的化学处理。 将氢氧化钙加入到含有高浓度碳酸钙形式的钙的废水中，以使它们彼此反应，并通过将其固定为碳酸氢钙来除去钙。
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公开(公告)号：US09263889B2
公开(公告)日：2016-02-16
申请号：US13763230
申请日：2013-02-08
CPC分类号： H02J1/04 , B60R16/03 , F02N11/0814 , F02N11/087 , F02N11/10 , F02N2011/0888 , F02N2250/02 , H02M3/155 , Y02T10/48
摘要： The present invention provides a power-supply device, which can continuously supply a voltage from a power supply to a load even if a breakdown of a circuit is generated. The power-supply device includes a booster circuit, a normally-closed bypass relay, a CPU, and a switching circuit. A first switch of the switching circuit is turned on by a switching signal from the CPU, and a second switch is turned on by a boosting request signal from a boosting request signal generator. In the case that one of or both the switching signal and the boosting request signal are not input to the switching circuit 14, because a coil of a bypass relay is not energized, a contact turns on, and a voltage is supplied from a DC power supply to the load through the contact. When both the switching signal and the boosting request signal are input to the switching circuit, the coil is energized to turn off the contact, and a voltage supply path to the load is switched from the side of the bypass relay to the side of the booster circuit.
摘要翻译： 本发明提供一种供电装置，其即使产生电路故障，也能够从电源向负载连续地供给电压。 电源装置包括升压电路，常闭旁路继电器，CPU和开关电路。 开关电路的第一开关由来自CPU的开关信号导通，并且第二开关由来自升压请求信号发生器的升压请求信号导通。 在切换信号和升压请求信号中的一方或两者不输入到切换电路14的情况下，由于旁路继电器的线圈未被通电，所以触点导通，并且从直流电力供给电压 通过触点提供给负载。 当切换信号和升压请求信号都被输入到开关电路时，线圈被通电以关断触点，并且到负载的电压供应路径从旁路继电器侧切换到升压器侧 电路。
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7.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE 有权用于制造半导体器件的方法和用于清洁半导体衬底的方法公开(公告)号：US20110034037A1
公开(公告)日：2011-02-10
申请号：US12988007
申请日：2009-04-10
IPC分类号： H01L21/469 , B08B3/00
CPC分类号： H01L21/02052 , H01L21/02054 , H01L21/0206 , Y10S438/906
摘要： Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.
摘要翻译： 公开了一种能够解决现有的清洗方法的问题的半导体基板的清洗方法，该清洗方法应至少包括五个步骤，用于清洗半导体基板等基板。 用于清洗半导体衬底的方法包括用含有臭氧的超纯水清洗衬底的第一步骤，用含有表面活性剂的超纯水清洗衬底的第二步骤以及从表面活性剂中除去有机化合物的第三步骤， 含有超纯水和2-丙醇的清洗液。 在第三步之后，将诸如氪的惰性气体的等离子体施加到基底上以进一步除去源自表面活性剂的有机化合物。
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公开(公告)号：US06797194B1
公开(公告)日：2004-09-28
申请号：US09622397
申请日：2000-12-01
IPC分类号： C09K1300
CPC分类号： H01L21/02063 , H01L21/02129 , H01L21/02164 , H01L21/02238 , H01L21/02271 , H01L21/02274 , H01L21/31111 , H01L21/76814
摘要： The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.
摘要翻译： 本发明提供了一种用于表面处理方法的微加工表面处理材料，并且在去除在接触孔底部产生的自然氧化层时，抑制接触孔直径的扩大。 微加工表面处理材料含有小于0.1％的氢氟酸，和大于40重量％但小于或等于47重量％的氟化铵。 此外，其中含有0.0001至0.1重量％的表面活性剂。
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公开(公告)号：US08501138B2
公开(公告)日：2013-08-06
申请号：US11887324
申请日：2006-06-09
CPC分类号： C01B35/061
摘要： A production method of high purity silver tetrafluoroborate, capable of producing silver tetrafluoroborate (AgBF4) at purity higher than the conventional, without using an organic solvent. The production method of the present invention is characterized in that the method comprises the step of: reacting silver fluoride with boron trifluoride in the presence of anhydrous hydrofluoric acid. Boron trifluoride is delivered into a solution obtained by dissolving or suspending silver fluoride in an anhydrous hydrofluoric acid solution.
摘要翻译： 高纯度四氟硼酸银的制备方法，其能够生产纯度高于常规的四氟硼酸银（AgBF 4），而不使用有机溶剂。 本发明的制备方法的特征在于该方法包括在无水氢氟酸存在下使氟化银与三氟化硼反应的步骤。 将三氟化硼输送到通过将氟化银溶解或悬浮在无水氢氟酸溶液中获得的溶液中。
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公开(公告)号：US20130162033A1
公开(公告)日：2013-06-27
申请号：US13728426
申请日：2012-12-27
摘要： A power-supply device has a DC power supply, a load, a booster circuit disposed between the DC power supply and the load, wherein the booster circuit supplies a voltage at the DC power supply to the load while boosting the voltage, a bypass element disposed between the DC power supply and the load, wherein the bypass element constitutes a bypass path with respect to the booster circuit, a controller that controls an operation of the booster circuit, a first switching element that drives the bypass element in a first driving path, and a second switching element that drives the bypass element in a second driving path.
摘要翻译： 电源装置具有直流电源，负载，设置在直流电源和负载之间的升压电路，其中升压电路在升压电压的同时向负载提供直流电源上的电压;旁路元件 设置在直流电源和负载之间，其中旁路元件构成相对于升压电路的旁路，控制升压电路的运行的控制器，第一驱动路径驱动旁路元件的第一开关元件 以及在第二驱动路径中驱动旁路元件的第二开关元件。
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