公开(公告)号：US08471477B2

公开(公告)日：2013-06-25

申请号：US13071227

申请日：2011-03-24

申请人： Masayuki Tomita ,  Katsunori Funaki ,  Shinji Yashima ,  Ryuichi Shimada

发明人： Masayuki Tomita ,  Katsunori Funaki ,  Shinji Yashima ,  Ryuichi Shimada

IPC分类号： H05B31/26

CPC分类号： H01J37/32183 ,  H01J37/32091

摘要： A processing speed may be easily controlled over the wide range within the impedance variation range. A substrate processing apparatus includes: a processing chamber configured to process a substrate; a substrate support unit configured to support the substrate in the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber; a plasma generation electrode configured to convert the processing gas supplied into the processing chamber to be in a plasma state; a radio frequency power source configured to apply a radio frequency power to the plasma generation electrode; a variable impedance electrode installed at the substrate support unit and configured to control an electric potential of the substrate; a variable impedance mechanism connected to the variable impedance electrode and configured to vary an impedance according to a reciprocal of a peak-to-peak voltage of the plasma generation electrode; an exhaust unit configured to exhaust an atmosphere in the processing chamber; and a controller configured to control at least the variable impedance mechanism.

摘要翻译： 可以在阻抗变化范围内的宽范围内容易地控制处理速度。 基板处理装置包括：处理室，被配置为处理基板; 衬底支撑单元，其构造成在所述处理室中支撑所述衬底; 处理气体供给单元，其构造成将处理气体供给到所述处理室中; 等离子体产生电极，被配置为将供应到处理室中的处理气体转换成等离子体状态; 射频电源，被配置为向所述等离子体产生电极施加射频电力; 可变阻抗电极，其安装在所述基板支撑单元处并且被配置为控制所述基板的电位; 连接到所述可变阻抗电极并被配置为根据所述等离子体产生电极的峰 - 峰电压的倒数改变阻抗的可变阻抗机构; 排气单元，其构造成排出处理室中的气氛; 以及控制器，被配置为至少控制所述可变阻抗机构。

公开(公告)号：US07045447B2

公开(公告)日：2006-05-16

申请号：US10396323

申请日：2003-03-26

申请人： Unryu Ogawa ,  Naoya Yamakado ,  Tadashi Terasaki ,  Shinji Yashima

发明人： Unryu Ogawa ,  Naoya Yamakado ,  Tadashi Terasaki ,  Shinji Yashima

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C8/36 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/5093 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202

摘要： A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.

摘要翻译： 一种使用等离子体处理装置的半导体器件制造方法，包括处理室，在处理室中支撑基板的基板支撑体和设置在处理室周围的圆筒形电极和力线形成部件的磁力线，包括成形 然后通过改变衬底支撑体的高频阻抗，然后通过由等离子体活化的活性氮的氮氧化氧化膜，连续地形成氮氧化物膜。

公开(公告)号：US08486222B2

公开(公告)日：2013-07-16

申请号：US13239902

申请日：2011-09-22

申请人： Tokunobu Akao ,  Unryu Ogawa ,  Masahisa Okuno ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

发明人： Tokunobu Akao ,  Unryu Ogawa ,  Masahisa Okuno ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67115 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/28194 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/68792 ,  H01L29/517

摘要： A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.

摘要翻译： 基板处理装置包括：处理基板的处理室，设置在处理室内的基板支撑部件，以支撑基板;设置在处理室外部的微波发生器;波导发射端口，被配置为提供由微波产生的微波 发生器进入处理室，其中波导发射端口的中心位置偏离支撑在衬底支撑构件上的衬底的中心位置，并且波导发射端口面向支撑在衬底支撑件上的衬底的前表面的一部分 以及控制单元，被配置为相对于所述波导发射端口改变所述基板支撑构件在水平方向上的相对位置。

公开(公告)号：US20090255630A1

公开(公告)日：2009-10-15

申请号：US11919348

申请日：2006-04-26

申请人： Kazuyuki Toyoda ,  Shinji Yashima ,  Yuji Takebayashi ,  Takeshi Itoh

发明人： Kazuyuki Toyoda ,  Shinji Yashima ,  Yuji Takebayashi ,  Takeshi Itoh

IPC分类号： H01L21/465

CPC分类号： H01J37/32532 ,  H01J37/32009 ,  H05H1/2406 ,  H05H2001/2418

摘要： Disclosed is a substrate processing apparatus, including: a reaction chamber to process a substrate; a substrate placing member to stack a plurality of substrates thereon in multi-layers at a predetermined distance from one another in the reaction chamber; an introducing section to introduce processing gas into the reaction chamber; an exhaust section to exhaust an inside of the reaction chamber; and a plurality of pairs of comb electrodes, to which alternating current electric power is to be applied, to generate plasma, the plurality of pairs of comb electrodes being disposed in the reaction chamber, wherein each pair of the plurality of pairs of comb electrodes are disposed at a predetermined distance from each of plasma processing faces of the plurality of the substrates to be placed on the substrate placing member.

摘要翻译： 公开了一种基板处理装置，包括：处理基板的反应室; 基板放置部件，用于在反应室中彼此以预定的距离以多层堆叠多个基板; 将处理气体引入反应室的导入部; 用于排出反应室内部的排气部分; 以及多个梳状电极对，其中施加有交流电力以产生等离子体，所述多对梳形电极对设置在所述反应室中，其中，所述多对梳形电极对中的每一对 设置在要放置在基板放置部件上的多个基板的各等离子体处理面的预定距离处。

公开(公告)号：US09171724B2

公开(公告)日：2015-10-27

申请号：US13617783

申请日：2012-09-14

申请人： Shinji Yashima ,  Atsushi Umekawa

发明人： Shinji Yashima ,  Atsushi Umekawa

IPC分类号： H01L21/00 ,  H01L21/263 ,  H05B6/80

CPC分类号： H01L21/263 ,  H05B6/806

摘要： A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.

摘要翻译： 基板处理装置包括处理基板的处理室，安装在处理室内的导电基板支撑台，安装有基板的电介质板，放置在基板支撑台上的电介质板，微波发生器 其安装在处理室外部，以及微波提供单元，其将由微波发生器产生的微波提供到处理室中。

公开(公告)号：US08987645B2

公开(公告)日：2015-03-24

申请号：US13240545

申请日：2011-09-22

申请人： Unryu Ogawa ,  Masahisa Okuno ,  Tokunobu Akao ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

发明人： Unryu Ogawa ,  Masahisa Okuno ,  Tokunobu Akao ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

IPC分类号： H05B6/68 ,  H05B6/64 ,  H01L21/67 ,  H01L21/687 ,  H05B6/80

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H01L21/6875 ,  H05B6/806

摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.

摘要翻译： 提供了一种能够均匀加热衬底同时减少衬底温度增加以降低热量预算的衬底处理设备和半导体器件的制造方法。 基板处理装置包括：处理室，被配置为处理基板; 安装在所述处理室中以支撑所述基板的基板支撑单元; 微波供给单元，被配置为向由所述基板支撑单元支撑的所述基板的处理表面供给微波，所述微波供给单元包括微波辐射单元，所述微波辐射单元在旋转的同时将从微波源供应的微波辐射到所述处理室; 安装在微波提供单元和基板支撑单元之间的隔板; 安装在所述基板支撑单元处的冷却单元; 以及控制单元，被配置为至少控制所述基板支撑单元，所述微波提供单元和所述冷却单元。

公开(公告)号：US08557720B2

公开(公告)日：2013-10-15

申请号：US13242690

申请日：2011-09-23

申请人： Tokunobu Akao ,  Unryu Ogawa ,  Masahisa Okuno ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

发明人： Tokunobu Akao ,  Unryu Ogawa ,  Masahisa Okuno ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

IPC分类号： H01L21/324 ,  H01L21/42 ,  H01L21/44

CPC分类号： H01L21/28194 ,  H01L21/67109 ,  H01L21/67115

摘要： A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.

摘要翻译： 一种基板处理装置，包括：处理室，被配置为处理具有包括电介质的前表面的基板，设置在所述处理室内的基板支撑构件以支撑所述基板;微波供给单元，被配置为将微波提供给 所述基板支撑在所述基板支撑构件上; 以及导电基板冷却单元，其设置在所述基板的背面侧，所述基板支撑在所述基板支撑构件上，并具有面向所述基板的背面的相对面。 衬底支撑构件的顶部和衬底冷却单元的相对表面之间的距离对应于当衬底被处理时提供的微波的1/4倍数的奇数倍。