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公开(公告)号：US08981403B2
公开(公告)日：2015-03-17
申请号：US13605007
申请日：2012-09-06
申请人： Maxim S Shatalov , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
发明人： Maxim S Shatalov , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC分类号： H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/22 , H01L2224/16225 , Y02W10/37
摘要： A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.
摘要翻译： 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。
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公开(公告)号：US20130056770A1
公开(公告)日：2013-03-07
申请号：US13605007
申请日：2012-09-06
申请人： Maxim S. Shatalov , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
发明人： Maxim S. Shatalov , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
IPC分类号： H01L33/22 , H01L21/205 , G06F17/50
CPC分类号： H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/22 , H01L2224/16225 , Y02W10/37
摘要： A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.
摘要翻译： 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。
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3.发明授权Emitting device with compositional and doping inhomogeneities in semiconductor layers 有权具有半导体层成分和掺杂不均匀性的发光器件公开(公告)号：US08787418B2
公开(公告)日：2014-07-22
申请号：US13572446
申请日：2012-08-10
IPC分类号： H01S5/00
CPC分类号： H01L29/15 , B82Y20/00 , H01L21/0254 , H01L33/06 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
摘要翻译： 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。
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4.发明授权公开(公告)号：US08426225B2
公开(公告)日：2013-04-23
申请号：US12960476
申请日：2010-12-04
申请人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/122 , B82Y10/00 , H01L29/155 , H01L29/2003 , H01L29/201 , H01L33/06 , H01L33/32
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.
摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。
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公开(公告)号：US20110138341A1
公开(公告)日：2011-06-09
申请号：US12960476
申请日：2010-12-04
申请人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
CPC分类号： H01L29/122 , B82Y10/00 , H01L29/155 , H01L29/2003 , H01L29/201 , H01L33/06 , H01L33/32
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.
摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。
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6.发明申请Emitting Device with Compositional and Doping Inhomogeneities in Semiconductor Layers 有权在半导体层中具有组成和掺杂不均匀性的发射器件公开(公告)号：US20140064314A1
公开(公告)日：2014-03-06
申请号：US13572446
申请日：2012-08-10
CPC分类号： H01L29/15 , B82Y20/00 , H01L21/0254 , H01L33/06 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
摘要翻译： 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。
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公开(公告)号：US20110253975A1
公开(公告)日：2011-10-20
申请号：US13162908
申请日：2011-06-17
申请人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
IPC分类号： H01L33/04
CPC分类号： H01L29/122 , B82Y10/00 , B82Y20/00 , H01L29/2003 , H01L29/201 , H01L33/04 , H01L33/32 , H01S5/2009 , H01S5/3216 , H01S5/34333
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。 可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。
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公开(公告)号：US09368580B2
公开(公告)日：2016-06-14
申请号：US13162908
申请日：2011-06-17
申请人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
IPC分类号： H01L29/06 , H01L29/12 , B82Y10/00 , B82Y20/00 , H01L29/20 , H01L29/201 , H01L33/04 , H01L33/32 , H01S5/20 , H01S5/32 , H01S5/343
CPC分类号： H01L29/122 , B82Y10/00 , B82Y20/00 , H01L29/2003 , H01L29/201 , H01L33/04 , H01L33/32 , H01S5/2009 , H01S5/3216 , H01S5/34333
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
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公开(公告)号：US08907322B2
公开(公告)日：2014-12-09
申请号：US13161961
申请日：2011-06-16
申请人： Remigijus Gaska , Maxim S. Shatalov , Michael Shur
发明人： Remigijus Gaska , Maxim S. Shatalov , Michael Shur
IPC分类号： H01L31/00 , H01L33/10 , H01L33/04 , H01L33/00 , H01L33/40 , H01L33/06 , H01L33/22 , H01L33/38
CPC分类号： H01L33/04 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/385 , H01L33/405
摘要： A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.
摘要翻译： 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。 二极管可以包括阻挡层，其被配置为使得阻挡层的能量与量子阱的电子基态能量之间的差异大于光生成结构的材料中的极化光学声子的能量 。 二极管可以包括复合触点，其包括对由光产生结构产生的光至少部分透明的粘附层和被配置为反射由光产生结构产生的光的至少一部分的反射金属层。
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公开(公告)号：US20140008675A1
公开(公告)日：2014-01-09
申请号：US13517711
申请日：2012-06-14
CPC分类号： H01L33/60 , F21V5/002 , H01L33/0045 , H01L33/007 , H01L33/20 , H01L33/22 , H01L2933/0083 , Y10T29/49
摘要： A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
摘要翻译： 提供了用于改善辐射通过界面的传播的异型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。 成形表面还包括一组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。
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