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    Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer
    1.
    发明授权
    Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer 有权
    使用界面控制层来改善金属互连层的半导体器件制造方法

    公开(公告)号：US06358829B2

    公开(公告)日：2002-03-19

    申请号：US09397616

    申请日：1999-09-16

    申请人： Mee-Young Yoon ,  Sang-In Lee ,  Hyun-Seok Lim

    发明人： Mee-Young Yoon ,  Sang-In Lee ,  Hyun-Seok Lim

    IPC分类号： H01L2144

    CPC分类号： H01L21/76876 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877

    摘要： A method for fabricating a semiconductor device having an aluminum (Al) interconnection layer with excellent surface morphology forms an interface control layer having a plurality of atomic layers before forming the Al interconnection layer. In the fabrication method, an interlayer dielectric (ILD) film having a contact hole which exposes a conductive region of the semiconductor substrate is formed on a semiconductor substrate, and an interface control layer having a plurality of atomic layers continuously deposited is formed on the inner wall of the contact hole and the upper surface of the interlayer dielectric film, to a thickness on the order of several angstroms to several tens of angstroms. Then, chemical vapor deposition (CVD) completes an Al blanket deposition on the resultant structure, including the interface control layer, to form a contact plug in the contact hole and an interconnection layer on the interlayer dielectric film.

    摘要翻译： 具有优异表面形态的具有铝（Al）互连层的半导体器件的制造方法在形成Al互连层之前形成具有多个原子层的界面控制层。 在制造方法中，在半导体衬底上形成具有暴露半导体衬底的导电区域的接触孔的层间电介质（ILD）膜，并且在内部形成具有连续沉积的多个原子层的界面控制层 接触孔的壁和层间电介质膜的上表面的厚度达到几埃到几十埃的数量级。 然后，化学气相沉积（CVD）在所得结构（包括界面控制层）上完成Al覆盖层沉积，以形成接触孔中的接触塞和层间电介质膜上的互连层。

    STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES
    3.
    发明申请
    STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES 审中-公开
    半导体器件存储电容器

    公开(公告)号：US20080185624A1

    公开(公告)日：2008-08-07

    申请号：US12100042

    申请日：2008-04-09

    申请人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    发明人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    IPC分类号： H01L29/94

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

    摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

    摘要翻译： 形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模制氧化物层，选择性地去除部分 模制氧化物层以在接触塞上方形成凹陷，在凹陷的底表面和侧表面上形成钛层，在钛层上形成氮化钛层，并在氮化钛层上形成氮氧化钛层。 存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物 层在氮化钛层上。

    Capacitor for a semiconductor device and method of forming the same
    5.
    发明授权
    Capacitor for a semiconductor device and method of forming the same 有权
    用于半导体器件的电容器及其形成方法

    公开(公告)号：US07719045B2

    公开(公告)日：2010-05-18

    申请号：US12251352

    申请日：2008-10-14

    申请人： Young-Joo Cho ,  Hyun-Seok Lim ,  Rak-Hwan Kim ,  Jung-Wook Kim ,  Hyun-Suk Lee

    发明人： Young-Joo Cho ,  Hyun-Seok Lim ,  Rak-Hwan Kim ,  Jung-Wook Kim ,  Hyun-Suk Lee

    IPC分类号： H01L27/108

    CPC分类号： H01L28/90 ,  H01L27/0207 ,  H01L27/10852 ,  H01L28/75

    摘要： In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.

    摘要翻译： 在具有高介电常数的电容器中，电容器包括圆柱形下电极，电介质层和上电极。 在作为电介质层的下电极的内表面，顶面和外表面上形成金属氧化物层。 第一子电极沿着下电极的轮廓在电介质层的表面上形成，并且第二子电极连续形成在与下电极的顶表面对应的第一子电极上，因此开口部分 的下部电极被第二子电极覆盖。 第一和第二子电极分别包括施加第一和第二应力的第一和第二金属氮化物层。 第一和第二个应力的方向彼此相反。 因此，在具有高介电常数的上电极中破裂最小化，从而减少电流泄漏。

    Capacitor for a semiconductor device and method of forming the same
    8.
    发明申请
    Capacitor for a semiconductor device and method of forming the same 失效
    用于半导体器件的电容器及其形成方法

    公开(公告)号：US20060113580A1

    公开(公告)日：2006-06-01

    申请号：US11286316

    申请日：2005-11-23

    申请人： Young-Joo Cho ,  Hyun-Seok Lim ,  Rak-Hwan Kim ,  Jung-Wook Kim ,  Hyun-Suk Lee

    发明人： Young-Joo Cho ,  Hyun-Seok Lim ,  Rak-Hwan Kim ,  Jung-Wook Kim ,  Hyun-Suk Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L28/90 ,  H01L27/0207 ,  H01L27/10852 ,  H01L28/75

    摘要： In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.

    摘要翻译： 在具有高介电常数的电容器中，电容器包括圆柱形下电极，电介质层和上电极。 在作为电介质层的下电极的内表面，顶面和外表面上形成金属氧化物层。 第一子电极沿着下电极的轮廓在电介质层的表面上形成，并且第二子电极连续形成在与下电极的顶表面对应的第一子电极上，因此开口部分 的下部电极被第二子电极覆盖。 第一和第二子电极分别包括施加第一和第二应力的第一和第二金属氮化物层。 第一和第二个应力的方向彼此相反。 因此，在具有高介电常数的上电极中破裂最小化，从而减少电流泄漏。