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    Trench isolation employing a doped oxide trench fill
    1.
    发明授权
    Trench isolation employing a doped oxide trench fill 失效
    使用掺杂氧化物沟槽填充的沟槽隔离

    公开(公告)号：US06890833B2

    公开(公告)日：2005-05-10

    申请号：US10397761

    申请日：2003-03-26

    申请人： Michael Belyansky ,  Andreas Knorr ,  Oleg Gluschenkov ,  Christopher Parks

    发明人： Michael Belyansky ,  Andreas Knorr ,  Oleg Gluschenkov ,  Christopher Parks

    IPC分类号： H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/76224

    摘要： A trench isolation structure is formed in a substrate. One or more openings are formed in a surface of the substrate, and a liner layer is deposited at least along a bottom and sidewalls of the openings. A layer of doped oxide material is deposited at least in the openings, and the substrate is annealed to reflow the layer of doped oxide material. Only a portion near the surface of the substrate is removed from the layer of doped oxide material in the opening. A cap layer is deposited atop a remaining portion of the layer of doped oxide material in the opening.

    摘要翻译： 在衬底中形成沟槽隔离结构。 在基板的表面中形成一个或多个开口，并且至少沿着开口的底部和侧壁沉积衬垫层。 至少在开口中沉积一层掺杂的氧化物材料，并且将衬底退火以回流掺杂的氧化物材料层。 仅在基片表面附近的部分从开口中的掺杂氧化物材料层中除去。 覆盖层沉积在开口中掺杂氧化物材料层的剩余部分的顶部。

    High density plasma oxidation
    2.
    发明授权
    High density plasma oxidation 失效
    高密度等离子体氧化

    公开(公告)号：US07273638B2

    公开(公告)日：2007-09-25

    申请号：US10338254

    申请日：2003-01-07

    申请人： Michael Belyansky ,  Oleg Glushenkov ,  Andreas Knorr

    发明人： Michael Belyansky ,  Oleg Glushenkov ,  Andreas Knorr

    IPC分类号： H05H1/46 ,  B05D3/06 ,  B05D3/14 ,  C23C16/40 ,  C23C16/505 ,  H01L21/473 ,  C23C16/509

    CPC分类号： H01L21/31658 ,  C23C8/36 ,  H01J37/321 ,  H01J2237/338 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

    摘要： A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and/or Rn are ionized to create a plasma having an electron density of at least about 1e12 cm−3 and containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.

    摘要翻译： 一种氧化具有约30,000mm 2以上面积的基材的方法。 该表面优选由含硅材料，例如硅，硅锗，碳化硅，氮化硅和金属硅化物组成。 通常对氧气（例如Ne，Ar，Kr，Xe和/或Rn）通常不与氧反应的含氧气体和稀释气体的混合物被电离以产生电子密度为至少约1e12cm -3，并且包含平均温度大于约1eV的环境电子。 衬底表面被能量粒子氧化，主要由等离子体中产生的原子氧组成，形成厚度基本均匀的氧化膜。 衬底的氧化在低于约700℃的温度下进行，例如在约室温，20℃和约500℃之间。

    HIGH DENSITY PLASMA OXIDATION
    3.
    发明申请
    HIGH DENSITY PLASMA OXIDATION 审中-公开
    高密度等离子体氧化

    公开(公告)号：US20070245957A1

    公开(公告)日：2007-10-25

    申请号：US11769372

    申请日：2007-06-27

    申请人： Michael Belyansky ,  Oleg Glushenkov ,  Andreas Knorr

    发明人： Michael Belyansky ,  Oleg Glushenkov ,  Andreas Knorr

    IPC分类号： C23C16/00

    CPC分类号： H01L21/31658 ,  C23C8/36 ,  H01J37/321 ,  H01J2237/338 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

    摘要： A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal silicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and/or Rn are ionized to create a plasma having an electron density of at least about 1 e12 cm−3 and containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.

    摘要翻译： 一种氧化具有约30,000mm 2以上面积的基材的方法。 表面优选由含硅材料，例如硅，硅锗，碳化硅，氮化硅和金属硅化物组成。 通常对氧气，例如Ne，Ar，Kr，Xe和/或Rn不反应的含氧气体和稀释剂气体的混合物被电离以产生电子密度为至少约1×12cm× > -3，并且包含平均温度大于约1eV的环境电子。 衬底表面被能量粒子氧化，主要由等离子体中产生的原子氧组成，形成厚度基本均匀的氧化膜。 衬底的氧化在低于约700℃的温度下进行，例如在约室温，20℃和约500℃之间。

    Semiconductor structures and methods for forming isolation between Fin structures of FinFET devices
    6.
    发明授权
    Semiconductor structures and methods for forming isolation between Fin structures of FinFET devices 有权
    用于在FinFET器件的Fin结构之间形成隔离的半导体结构和方法

    公开(公告)号：US09257325B2

    公开(公告)日：2016-02-09

    申请号：US12562849

    申请日：2009-09-18

    申请人： Andreas Knorr ,  Frank Scott Johnson

    发明人： Andreas Knorr ,  Frank Scott Johnson

    IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78

    CPC分类号： H01L21/76229 ,  H01L29/66795 ,  H01L29/7851

    摘要： Semiconductor structures and methods for forming isolation between fin structures formed from a bulk silicon wafer are provided. A bulk silicon wafer is provided having one or more fin structures formed therefrom. Forming of the fin structures defines isolation trenches between the one or more fin structures. Each of the fin structures has vertical sidewalls. An oxide layer is deposited in the isolation trenches and on the vertical sidewalls using HDPCVD in about a 4:1 ratio or greater. The oxide layer is isotropically etched to remove the oxide layer from the vertical sidewalls and a portion of the oxide layer from the bottom of the isolation trenches. A substantially uniformly thick isolating oxide layer is formed on the bottom of the isolation trench to isolate the one or more fin structures and substantially reduce fin height variability.

    摘要翻译： 提供了用于形成由体硅晶片形成的翅片结构之间的隔离的半导体结构和方法。 提供具有由其形成的一个或多个翅片结构的体硅晶片。 翅片结构的形成限定了一个或多个翅片结构之间的隔离沟槽。 每个翅片结构都具有垂直侧壁。 使用HDPCVD以大约4:1的比例或更大的比例在隔离沟槽和垂直侧壁上沉积氧化物层。 氧化层被各向同性蚀刻以从隔离沟底部的垂直侧壁和氧化物层的一部分去除氧化物层。 在隔离沟槽的底部上形成基本上均匀的厚的隔离氧化物层，以隔离一个或多个翅片结构，并显着降低翅片高度的可变性。