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    METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES
    3.
    发明申请
    METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES 审中-公开
    用微型结构处理对象的方法

    公开(公告)号：US20100297362A1

    公开(公告)日：2010-11-25

    申请号：US12848871

    申请日：2010-08-02

    申请人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

    发明人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

    IPC分类号： C23C8/06

    CPC分类号： G03F1/74 ,  C23C16/047 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/24495 ,  H01J2237/30466 ,  H01J2237/30483 ,  H01J2237/31732 ,  H01J2237/31744

    摘要： A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.

    摘要翻译： 提供了一种用小型化结构处理物体的方法。 该方法包括将反应气体进料到物体的表面上。 该方法还包括通过将能量束引导到物体表面上待处理的区域中的处理位置上以便将物质沉积在物体上或从物体上去除材料来处理物体。 该方法还包括检测光束与物体的相互作用产物，并且借助于从检测到的与物体的光束的相互作用产物获得的信息来确定物体的处理是继续还是可以终止。 要处理的区域被细分成多个表面段，并且在相同表面段的射束区域上检测到的相互作用产物被积分以形成总信号，以便确定物体的处理是否必须继续或可以 被终止。

    Beam-induced etching
    9.
    发明申请
    Beam-induced etching 有权
    光束蚀刻

    公开(公告)号：US20060228634A1

    公开(公告)日：2006-10-12

    申请号：US11102602

    申请日：2005-04-08

    申请人： Tristan Bret ,  Patrik Hoffmann ,  Michel Rossi ,  Xavier Multone

    发明人： Tristan Bret ,  Patrik Hoffmann ,  Michel Rossi ,  Xavier Multone

    IPC分类号： H01J37/08 ,  G21G5/00 ,  A61N5/00 ,  G21K5/10 ,  G03F1/00

    CPC分类号： C23F4/00 ,  C23F4/02 ,  G03F1/72 ,  G03F1/74 ,  H01J2237/31744

    摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

    摘要翻译： 描述了使用束激活气体蚀刻材料的局部束处理的方法和装置。 公开了适用于光束诱导蚀刻的化合物。 本发明特别适用于光刻掩模上的铬材料的电子束诱导蚀刻。 在一个实施方案中，极性化合物如ClNO 2气体被电子束激活以选择性地蚀刻石英衬底上的铬材料。 通过使用电子束代替离子束，消除了与离子束掩模修复相关的许多问题，例如染色和河床。 端点检测并不重要，因为电子束和气体不会显着蚀刻衬底。

    BEAM-INDUCED ETCHING
    10.
    发明申请
    BEAM-INDUCED ETCHING 审中-公开
    光束诱导蚀刻

    公开(公告)号：US20100203431A1

    公开(公告)日：2010-08-12

    申请号：US12686068

    申请日：2010-01-12

    申请人： Tristan Bret ,  Patrik Hoffmann ,  Michel Rossi ,  Xavier Multone

    发明人： Tristan Bret ,  Patrik Hoffmann ,  Michel Rossi ,  Xavier Multone

    IPC分类号： G03F1/00 ,  C23F1/00

    CPC分类号： C23F4/00 ,  C23F4/02 ,  G03F1/72 ,  G03F1/74 ,  H01J2237/31744

    摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

    摘要翻译： 描述了使用束激活气体蚀刻材料的局部束处理的方法和装置。 公开了适用于光束诱导蚀刻的化合物。 本发明特别适用于光刻掩模上的铬材料的电子束诱导蚀刻。 在一个实施方案中，极性化合物如ClNO 2气体被电子束激活以选择性地蚀刻石英衬底上的铬材料。 通过使用电子束代替离子束，消除了与离子束掩模修复相关的许多问题，例如染色和河床。 端点检测并不重要，因为电子束和气体不会显着蚀刻衬底。