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公开(公告)号：US20120045853A1
公开(公告)日：2012-02-23
申请号：US12857864
申请日：2010-08-17
CPC分类号： H01L22/20 , G01R31/31816 , H01L21/563 , H01L22/14 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/83102 , H01L2224/92125 , H01L2924/014 , H01L2924/3511 , H01L2924/00
摘要： A method for detecting soft errors in an integrated circuit (IC) due to transient-particle emission, the IC comprising at least one chip and a substrate includes mixing an epoxy with a radioactive source to form a hot underfill (HUF); underfilling the chip with the HUF; sealing the underfilled chip; measuring a radioactivity of the HUF at an edge of the chip; measuring the radioactivity of the HUF on a test coupon; testing the IC for soft errors by determining a current radioactivity of the HUF at the time of testing based on the measured radioactivity; and after the expiration of a radioactive decay period of the radioactive source, using the IC in a computing device by a user.
摘要翻译： 一种用于检测由于瞬态粒子发射引起的集成电路（IC）中的软错误的方法，包括至少一个芯片和基板的IC包括将环氧树脂与放射源混合以形成热底部填充物（HUF）; 用HUF填充芯片; 密封未充足的芯片; 测量芯片边缘处的HUF的放射性; 测量试样上HUF的放射性; 通过基于测量的放射性确定在测试时的HUF的当前放射性来测试IC的软错误; 并在放射源的放射性衰变期到期后，由用户在计算装置中使用IC。
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公开(公告)号：US08288177B2
公开(公告)日：2012-10-16
申请号：US12857864
申请日：2010-08-17
CPC分类号： H01L22/20 , G01R31/31816 , H01L21/563 , H01L22/14 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/83102 , H01L2224/92125 , H01L2924/014 , H01L2924/3511 , H01L2924/00
摘要： A method for detecting soft errors in an integrated circuit (IC) due to transient-particle emission, the IC comprising at least one chip and a substrate includes mixing an epoxy with a radioactive source to form a hot underfill (HUF); underfilling the chip with the HUF; sealing the underfilled chip; measuring a radioactivity of the HUF at an edge of the chip; measuring the radioactivity of the HUF on a test coupon; testing the IC for soft errors by determining a current radioactivity of the HUF at the time of testing based on the measured radioactivity; and after the expiration of a radioactive decay period of the radioactive source, using the IC in a computing device by a user.
摘要翻译： 一种用于检测由于瞬态粒子发射引起的集成电路（IC）中的软错误的方法，包括至少一个芯片和基板的IC包括将环氧树脂与放射源混合以形成热底部填充物（HUF）; 用HUF填充芯片; 密封未充足的芯片; 测量芯片边缘处的HUF的放射性; 测量试样上HUF的放射性; 通过基于测量的放射性确定在测试时的HUF的当前放射性来测试IC的软错误; 并在放射源的放射性衰变期到期后，由用户在计算装置中使用IC。
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公开(公告)号：US08785217B2
公开(公告)日：2014-07-22
申请号：US13230798
申请日：2011-09-12
CPC分类号： H01L23/556 , G01R31/2881 , G06F17/5036 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： An energy distribution of soft error-inducing radiation likely to be encountered by an electronic circuit during operation is determined. A tuned radiation source having a source energy distribution similar to the determined energy distribution is prepared. The electronic circuit is tested using the tuned radiation source.
摘要翻译： 确定在操作期间可能由电子电路遇到的软误差诱发辐射的能量分布。 制备具有与所确定的能量分布相似的源能分布的调谐辐射源。 使用调谐的辐射源测试电子电路。
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公开(公告)号：US07649257B2
公开(公告)日：2010-01-19
申请号：US12051881
申请日：2008-03-20
IPC分类号： H01L23/48
CPC分类号： H01L22/20 , G01R31/2856 , G01R31/2881 , G01R31/31816 , H01L23/556 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/014 , H01L2924/1305 , H01L2924/00
摘要： An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
摘要翻译： 集成电路和集成电路的形成和使用方法。 该电路包括：在集成电路芯片的顶表面的选定区域上的辐射发射层，辐射发射层包括第一聚合物或树脂和第一放射性材料，该区域小于整个顶表面的整个面积 集成电路芯片，该区域包括当被第一放射性物质产生的辐射撞击时易于暂时失效的电路。
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公开(公告)号：US20090236699A1
公开(公告)日：2009-09-24
申请号：US12051881
申请日：2008-03-20
CPC分类号： H01L22/20 , G01R31/2856 , G01R31/2881 , G01R31/31816 , H01L23/556 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/014 , H01L2924/1305 , H01L2924/00
摘要： An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
摘要翻译： 集成电路和集成电路的形成和使用方法。 该电路包括：在集成电路芯片的顶表面的选定区域上的辐射发射层，辐射发射层包括第一聚合物或树脂和第一放射性材料，该区域小于整个顶表面的整个面积 集成电路芯片，该区域包括当被第一放射性物质产生的辐射撞击时易于暂时失效的电路。
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公开(公告)号：US20130062740A1
公开(公告)日：2013-03-14
申请号：US13230798
申请日：2011-09-12
IPC分类号： H01L23/556 , G06F17/50 , G06F19/00 , G01R27/28 , H01L21/66
CPC分类号： H01L23/556 , G01R31/2881 , G06F17/5036 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： An energy distribution of soft error-inducing radiation likely to be encountered by an electronic circuit during operation is determined. A tuned radiation source having a source energy distribution similar to the determined energy distribution is prepared. The electronic circuit is tested using the tuned radiation source.
摘要翻译： 确定在操作期间可能由电子电路遇到的软误差诱发辐射的能量分布。 制备具有与所确定的能量分布相似的源能分布的调谐辐射源。 使用调谐的辐射源测试电子电路。
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公开(公告)号：US08212218B2
公开(公告)日：2012-07-03
申请号：US12627076
申请日：2009-11-30
申请人： Cyril Cabral, Jr. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
发明人： Cyril Cabral, Jr. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
IPC分类号： G01T1/02
CPC分类号： G01T1/026
摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.
摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。
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8.发明授权CMOS storage devices configurable in high performance mode or radiation tolerant mode 有权CMOS存储设备可在高性能模式或辐射容忍模式下配置公开(公告)号：US07719887B2
公开(公告)日：2010-05-18
申请号：US11845170
申请日：2007-08-27
IPC分类号： G11C11/00
CPC分类号： G11C11/4125 , G11C13/0004
摘要： A radiation tolerant circuit, structure of the circuit and method of autonomic radiation event device protection. The circuit includes a charge storage node connected to a resistor, the resistor comprising a material having an amorphous state and a crystalline state, the amorphous state having a higher resistance than the crystalline state, the material reversibly convertible between the amorphous state and the crystalline state by application of heat; an optional resistive heating element proximate to the resistor; and means for writing data to the charge storage node and means for reading data from the charge storage node.
摘要翻译： 辐射耐受电路，电路结构及自主辐射事件装置保护方法。 电路包括连接到电阻器的电荷存储节点，该电阻器包括具有非晶状态和结晶状态的材料，非晶状态具有比结晶状态更高的电阻，该材料可在非晶状态和结晶态之间可逆地转换 通过应用热量; 靠近电阻器的可选电阻加热元件; 以及用于向电荷存储节点写入数据的装置和用于从电荷存储节点读取数据的装置。
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公开(公告)号：US07601627B2
公开(公告)日：2009-10-13
申请号：US12051040
申请日：2008-03-19
IPC分类号： H01L21/44
CPC分类号： H01L23/556 , H01L21/76801 , H01L21/76834 , H01L21/76838 , H01L23/5329 , H01L23/53295 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/05006 , H01L2224/05554 , H01L2224/05572 , H01L2224/05599 , H01L2224/13007 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/16 , H01L2224/451 , H01L2224/48227 , H01L2224/48465 , H01L2224/85399 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01057 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01084 , H01L2924/01092 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/15174 , H01L2924/15312 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H01L2224/45099 , H01L2924/00 , H01L2224/05552
摘要： A method for reduction of soft error rates in integrated circuits. The method including: providing a test device, the test device comprising: a semiconductor substrate; and a stack of one or more wiring levels stacked from a lowermost wiring level to an uppermost wiring level, the lowermost wiring level on a top surface of the substrate; selecting an energy of alpha particles of a given energy to be stopped from penetrating through the stack of one or more wiring levels; bombarding the semiconductor substrate with a flux of the alpha particles of the selected energy; and determining a combination of a thickness of a blocking layer and a volume percent of metal wires in the blocking layer sufficient to stop a predetermined percentage of alpha particles of the maximum energy striking a top surface of the blocking layer from penetrating through the stack of one or more wiring levels.
摘要翻译： 降低集成电路中软错误率的方法。 所述方法包括：提供测试装置，所述测试装置包括：半导体衬底; 以及从最下层布线层到最上布线层叠的一层或多层布线层的堆叠，在基板的上表面上的最下布线层; 选择要停止的给定能量的α粒子的能量穿透一个或多个布线层的堆叠; 用所选能量的α粒子的通量轰击半导体衬底; 并且确定阻挡层的厚度和阻挡层中的金属线的体积百分比的组合足以阻止撞击阻挡层的顶表面的最大能量的预定百分比的α粒子穿过一个 或更多的布线级别。
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公开(公告)号：US07316568B2
公开(公告)日：2008-01-08
申请号：US11284093
申请日：2005-11-22
IPC分类号： G09B23/28
CPC分类号： G09B23/28
摘要： A simulator for simulating a pulse in a manikin comprises a manikin body. The simulator further comprises a first magnet and a second magnet disposed opposite to each other and spaced apart from each other. The first magnet and second magnet comprise two juxtaposed first and second sub-magnets. The first and second juxtaposed sub-magnets in each magnet are oriented substantially in opposite directions. The first magnet and the second magnet are positioned such that the first sub-magnet of the first magnet is oriented substantially in a same direction as the first sub-magnet of the second magnet and such that the second sub-magnet of the first magnet is oriented substantially in a same direction as the second sub-magnet of the second magnet. The transducer further comprises an armature movably disposed between the first and second magnets. The armature comprises a frame and a solenoid wound adjacent a periphery of the frame. The transducer also comprises a rod attached to the frame of the armature. The armature interacts with the manikin body to simulate the pulse.
摘要翻译： 用于模拟人体模型中的脉冲的模拟器包括人体模型体。 模拟器还包括彼此相对设置并彼此间隔开的第一磁体和第二磁体。 第一磁体和第二磁体包括两个并列的第一和第二子磁体。 每个磁体中的第一和第二并置的副磁体基本上在相反的方向上取向。 第一磁体和第二磁体被定位成使得第一磁体的第一子磁体大致与第二磁体的第一子磁体相同的方向取向，并且使得第一磁体的第二子磁体为 基本上与第二磁体的第二子磁体相同的方向定向。 换能器还包括可移动地设置在第一和第二磁体之间的衔铁。 电枢包括邻近框架周边的框架和螺线管。 换能器还包括连接到电枢的框架的杆。 电枢与人体模型身体相互作用以模拟脉冲。
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