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    Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD
    5.
    发明申请
    Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD 失效
    具有通过单步MOCVD制造的集成波导光栅的掩埋异质结构器件

    公开(公告)号：US20090068778A1

    公开(公告)日：2009-03-12

    申请号：US12207521

    申请日：2008-09-10

    申请人： David P. Bour ,  Scott W. Corzine

    发明人： David P. Bour ,  Scott W. Corzine

    IPC分类号： H01L21/00

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  G02B6/131 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

    摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

    摘要翻译： 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

    InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
    7.
    发明授权
    InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效
    基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层

    公开(公告)号：US06730944B1

    公开(公告)日：2004-05-04

    申请号：US10354276

    申请日：2003-01-30

    申请人： Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

    发明人： Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

    IPC分类号： H01L2906

    CPC分类号： B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/3436 ,  H01S2302/00

    摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.

    摘要翻译： 本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。 激光器结构包括InAsP的量子阱层。 量子阱层夹在第一阻挡层和第二阻挡层之间。 每个阻挡层表现出比量子阱层更高的带隙能量。 此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。 所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。

    Buried heterostructure device fabricated by single step MOCVD
    8.
    发明授权
    Buried heterostructure device fabricated by single step MOCVD 失效
    通过单步MOCVD制造的埋置异质结构器件

    公开(公告)号：US07184640B2

    公开(公告)日：2007-02-27

    申请号：US10787349

    申请日：2004-02-25

    申请人： David P. Bour ,  Scott W. Corzine

    发明人： David P. Bour ,  Scott W. Corzine

    IPC分类号： G02B6/10

    CPC分类号： B82Y20/00 ,  G02B6/131 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

    摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

    摘要翻译： 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并限定细长的生长窗。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

    Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD
    9.
    发明授权
    Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 失效
    具有通过单步MOCVD制造的集成波导光栅的埋入异质结构器件

    公开(公告)号：US07941024B2

    公开(公告)日：2011-05-10

    申请号：US12207521

    申请日：2008-09-10

    申请人： David P. Bour ,  Scott W. Corzine

    发明人： David P. Bour ,  Scott W. Corzine

    IPC分类号： G02B6/10

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  G02B6/131 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

    摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

    摘要翻译： 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。