-
1.发明授权InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层公开(公告)号：US06730944B1
公开(公告)日：2004-05-04
申请号：US10354276
申请日：2003-01-30
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/3434 , H01S5/3436 , H01S2302/00
摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.
摘要翻译： 本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。 激光器结构包括InAsP的量子阱层。 量子阱层夹在第一阻挡层和第二阻挡层之间。 每个阻挡层表现出比量子阱层更高的带隙能量。 此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。 所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。
-
2.发明授权Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region 失效制造长波长砷化铟镓（InGaAsN）活性区域的方法公开(公告)号：US07033938B2
公开(公告)日：2006-04-25
申请号：US10785747
申请日：2004-02-23
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
IPC分类号： H01L21/44
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.
摘要翻译： 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。
-
公开(公告)号：US06711195B2
公开(公告)日：2004-03-23
申请号：US10087422
申请日：2002-02-28
申请人： Ying-Lan Chang , Scott W. Corzine , Russell D. Dupuis , Min Soo Noh , Jae Hyun Ryou , Michael R. T. Tan , Ashish Tandon
发明人： Ying-Lan Chang , Scott W. Corzine , Russell D. Dupuis , Min Soo Noh , Jae Hyun Ryou , Michael R. T. Tan , Ashish Tandon
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3422 , H01S5/343 , H01S5/34306
摘要： The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y≧0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.
摘要翻译： 长波长光子器件包括有源区，该有源区包括至少一个量子阱层材料的量子阱层，该量子阱层材料包括其中y> = 0的In y Ga 1-y As Sb，并且另外包括相应数量的势垒层 包括镓和磷的阻挡层材料。 阻挡层材料的导带能级大于量子阱层材料的导带能级，并且具有小于量子阱层材料的价带能级的价带能级。
-
4.发明授权Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth 失效具有通过外延层过度生长制造的环形激光器的半导体系统公开(公告)号：US07502405B2
公开(公告)日：2009-03-10
申请号：US11209994
申请日：2005-08-22
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译： 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。
-
5.发明申请Semiconductor System Having a Ring Laser Fabricated by Epitaxial Layer Overgrowth 失效具有由外延层过度生长制成的环形激光器的半导体系统公开(公告)号：US20090129426A1
公开(公告)日：2009-05-21
申请号：US12359326
申请日：2009-01-25
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译： 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。
-
6.发明授权Method and structure for deep well structures for long wavelength active regions 失效长波长活性区深井结构的方法和结构公开(公告)号：US07358523B2
公开(公告)日：2008-04-15
申请号：US10970528
申请日：2004-10-20
申请人： Michael R. T. Tan , Ashish Tandon , David P. Bour
发明人： Michael R. T. Tan , Ashish Tandon , David P. Bour
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/183 , H01S5/3408 , H01S5/34313 , H01S5/34333
摘要： Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
摘要翻译： 子阱被添加到发光半导体结构的量子阱中，以将其发射波长移动到更长的波长。 本发明的典型应用是例如InGaAs，InGaAsSb，InP和GaN材料体系。
-
7.发明授权Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region 有权用于制造长波长砷化镓镓（InGaAsN）活性区的方法公开(公告)号：US06756325B2
公开(公告)日：2004-06-29
申请号：US10140625
申请日：2002-05-07
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott Corzine
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.
摘要翻译： 公开了用于制造用于长波长发光器件的有源区的几种方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含 胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至 其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。
-
公开(公告)号：US07443561B2
公开(公告)日：2008-10-28
申请号：US11148467
申请日：2005-06-08
申请人： David P. Bour , Ashish Tandon , Michael R. T. Tan
发明人： David P. Bour , Ashish Tandon , Michael R. T. Tan
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01725 , G02F2001/01766 , G02F2202/101 , G02F2202/102
摘要： Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
摘要翻译： 电子吸收调制器中的双阱结构通过嵌入深超薄量子阱在量子阱活性区域中产生。 以常规量子阱为中心的嵌入式，超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态，并且通常导致空穴和电子分布更局限于常规量子的中心 好。 电吸收调制器提供的消光比通常增加。
-
9.发明授权System for optically pumping a long wavelength laser using a short wavelength laser 有权使用短波长激光器对长波长激光进行光学泵浦的系统公开(公告)号：US06553051B1
公开(公告)日：2003-04-22
申请号：US09703389
申请日：2000-10-31
IPC分类号： H01S3091
CPC分类号： H01S5/02212 , H01L2224/48091 , H01S5/02284 , H01S5/041 , H01S5/18369 , H01S5/32366 , H01L2924/00014
摘要： An optical assembly includes an optical subassembly containing a prefabricated long wavelength laser optically coupled to a prefabricated short wavelength laser located in a housing. The optical subassembly may be removably installed in the housing in which the short wavelength laser is contained. The short wavelength laser optically pumps the long wavelength laser resulting in a long wavelength laser output. The optical subassembly allows the independent fabrication, optimization and testing of the short wavelength laser and the long wavelength laser.
摘要翻译： 光学组件包括光学子组件，其包含光学耦合到位于壳体中的预制短波长激光器的预制长波长激光器。 光学子组件可以可拆卸地安装在容纳短波长激光器的壳体中。 短波长激光器对长波长激光器进行光泵浦，产生长波长激光输出。 光学子组件允许短波长激光器和长波长激光器的独立制造，优化和测试。
-
10.发明授权System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer 失效用于使用天然氧化物半导体层的发光器件和光电检测器的单片集成的系统和方法公开(公告)号：US06483862B1
公开(公告)日：2002-11-19
申请号：US09209528
申请日：1998-12-11
IPC分类号： H01S500
CPC分类号： H01S5/0264 , H01L27/15 , H01S5/0425 , H01S5/183 , H01S5/2027
摘要： A light emitting device and photodetector combination having a structure in which the layer of the photodetector that contacts the light emitting device is separated from the light emitting device by a native semiconductor oxide layer that is both insulating and has a refractive index lower than that of the light emitting device and the photodetector. This configuration results in a light emitting device and photodetector structure that minimizes the capture of the spontaneous emission light output from the light emitting device by the photodetector while electrically isolating the light emitting device from the photodetector. The electrical isolation of the light emitting device from the photodetector results in a four terminal device in which the light emitting device and photodetector may be independently biased, and can therefore be operated at a very low bias voltage.
摘要翻译： 一种发光器件和光电检测器组合，具有这样一种结构，其中接触发光器件的光电检测器层通过天然半导体氧化物层与发光器件分离，该天然半导体氧化物层是绝缘的并且折射率低于 发光器件和光电检测器。 这种配置导致发光器件和光电检测器结构，其使由光电检测器从发光器件输出的自发发射光的捕获最小化，同时将发光器件与光电检测器电隔离。 发光器件与光检测器的电隔离导致四端器件，其中发光器件和光电检测器可以被独立地偏置，因此可以在非常低的偏置电压下操作。
-
-
-
-
-
-
-
-
-
搜索结果
50 条记录 (耗时 0.027 秒)