公开(公告)号：US20130333923A1

公开(公告)日：2013-12-19

申请号：US13495545

申请日：2012-06-13

申请人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Son V. Nguyen ,  Mei-Yee Shek ,  Hosadurga Shobha ,  Li-Qun Xia

发明人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Son V. Nguyen ,  Mei-Yee Shek ,  Hosadurga Shobha ,  Li-Qun Xia

IPC分类号： C23C16/34 ,  H05K1/02

CPC分类号： C23C16/345 ,  C23C16/56 ,  H01L21/4803 ,  H05K1/0298 ,  Y10T428/24975

摘要： A layer of silicon nitride having a thickness from 0.5 nanometers to 2.4 nanometers is deposited on a substrate. A plasma nitridation process is carried out on the layer. These steps are repeated for a plurality of additional layers of silicon nitride, until a predetermined thickness is attained. Such steps can be used to provide a multilayer silicon nitride dielectric formed on a substrate having an upper surface of dielectric material with Cu and other conductors embedded within, and a plurality of steps. The multilayer silicon nitride dielectric has a plurality of individual layers each having a thickness from 0.5 nanometers to 2.4 nanometers, and the multilayer silicon nitride dielectric conformally covers the steps of the substrate with a conformality of at least seventy percent. A multilayer silicon nitride dielectric, and a multilevel back end of line interconnect wiring structure using same, are also provided.

摘要翻译： 将厚度为0.5纳米至2.4纳米的氮化硅层沉积在基底上。 在层上进行等离子体氮化处理。 对于多个附加氮化硅层重复这些步骤，直到达到预定厚度。 可以使用这样的步骤来提供形成在具有介电材料的上表面的衬底上的多层氮化硅电介质，其中Cu和其它导体嵌入其中并且多个步骤。 多层氮化硅电介质具有各自具有0.5纳米至2.4纳米厚度的多个单独层，多层氮化硅电介质保形地覆盖具有至少百分之七十的保形度的基底的步骤。 还提供了多层氮化硅电介质，以及使用该多层氮化硅电介质的多层后端的布线结构。

公开(公告)号：US08492880B2

公开(公告)日：2013-07-23

申请号：US13078305

申请日：2011-04-01

申请人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

发明人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

摘要翻译： 本公开提供了一种符合下面的衬底（即互连结构）的多层盖（即迁移屏障）。 可以位于互连结构的至少一个互连级别上方的多层盖包括从底部到顶部包括氮化硅的第一层和包含氮化硼和碳氮化硼中的至少一种的第二层。

公开(公告)号：US08536069B2

公开(公告)日：2013-09-17

申请号：US13612159

申请日：2012-09-12

申请人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

发明人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

公开(公告)号：US20120248617A1

公开(公告)日：2012-10-04

申请号：US13078305

申请日：2011-04-01

申请人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Son V. Nguyen ,  Li-Qun Xia

发明人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Son V. Nguyen ,  Li-Qun Xia

IPC分类号： H01L23/48 ,  B82Y99/00

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

摘要翻译： 本公开提供了一种符合下面的衬底（即互连结构）的多层盖（即迁移屏障）。 可以位于互连结构的至少一个互连级别上方的多层盖包括从底部到顶部包括氮化硅的第一层和包含氮化硼和碳氮化硼中的至少一种的第二层。

公开(公告)号：US08362596B2

公开(公告)日：2013-01-29

申请号：US12502690

申请日：2009-07-14

申请人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

发明人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

IPC分类号： H01L23/58 ,  H01L21/302

CPC分类号： H01L23/5329 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.

摘要翻译： 提供具有小于4.2的介电常数的介电覆盖层，与传统的介电覆盖层相比，其对UV和/或E-Beam辐射具有更高的机械和电学稳定性。 此外，介电覆盖层在沉积后处理时保持一致的压应力。 电介质覆盖层包括三层介电材料，其中至少一层具有良好的抗氧化性，耐导电性金属扩散，并且在至少UV固化下表现出高机械稳定性。 低k电介质封盖层还包括含有电子给体和双键电子的氮含量层。 低k电介质覆盖层还具有高压缩应力和高模量，并且在后沉积固化处理中是稳定的，这导致较少的膜和器件开裂和改进的器件可靠性。

公开(公告)号：US20110012238A1

公开(公告)日：2011-01-20

申请号：US12502690

申请日：2009-07-14

申请人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

发明人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

IPC分类号： H01L29/06 ,  H01L23/532 ,  H01L21/314

CPC分类号： H01L23/5329 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.

摘要翻译： 提供具有小于4.2的介电常数的介电覆盖层，与传统的介电覆盖层相比，其对UV和/或E-Beam辐射具有更高的机械和电学稳定性。 此外，介电覆盖层在沉积后处理时保持一致的压应力。 电介质覆盖层包括三层介电材料，其中至少一层具有良好的抗氧化性，耐导电性金属扩散，并且在至少UV固化下表现出高机械稳定性。 低k电介质封盖层还包括含有电子给体和双键电子的氮含量层。 低k电介质覆盖层还具有高压缩应力和高模量，并且在后沉积固化处理中是稳定的，这导致较少的膜和器件开裂和改进的器件可靠性。

公开(公告)号：US20130043514A1

公开(公告)日：2013-02-21

申请号：US13214157

申请日：2011-08-19

申请人： Alfred Grill ,  Thomas J. Haigh, JR. ,  Kelly Malone ,  Son V. Nguyen ,  Vishnubhai V. Patel ,  Hosadurga Shobha

发明人： Alfred Grill ,  Thomas J. Haigh, JR. ,  Kelly Malone ,  Son V. Nguyen ,  Vishnubhai V. Patel ,  Hosadurga Shobha

IPC分类号： H01L29/78 ,  H01L23/48 ,  C08J9/26 ,  H01L21/31

CPC分类号： H01L29/511 ,  C08J9/26 ,  C08J2201/042 ,  C08J2383/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L29/515 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multiphase ultra low k dielectric process incorporating an organo-silicon precursor including an organic porogen, high frequency radio frequency power just above plasma initiation in a PECVD chamber and energy post treatment. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa. A graded carbon adhesion layer of SiO2 and porous SiCOH.

摘要翻译： 包含有机硅前驱体的多相超低k电介质工艺，其包括有机致孔剂，在PECVD腔室中等离子体起始之前的高频射频功率和能量后处理。 具有k小于2.7且弹性模量大于7GPa的多孔SiCOH电介质材料。 SiO2和多孔SiCOH的分级碳粘附层。

公开(公告)号：US20110108992A1

公开(公告)日：2011-05-12

申请号：US12615354

申请日：2009-11-10

申请人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

发明人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。

公开(公告)号：US20120111825A1

公开(公告)日：2012-05-10

申请号：US13351370

申请日：2012-01-17

申请人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

发明人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

IPC分类号： B05D5/12 ,  B05D3/10

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。

公开(公告)号：US08120179B2

公开(公告)日：2012-02-21

申请号：US12615354

申请日：2009-11-10

申请人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

发明人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。