利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

116 条记录 (耗时 0.022 秒)

    Solar cells and method of manufacturing thereof
    3.
    发明授权
    Solar cells and method of manufacturing thereof 有权
    太阳能电池及其制造方法

    公开(公告)号：US08652872B2

    公开(公告)日：2014-02-18

    申请号：US13123532

    申请日：2009-10-12

    申请人： Moshe Finarov ,  Mikhael Matusovsky ,  Amir Noy

    发明人： Moshe Finarov ,  Mikhael Matusovsky ,  Amir Noy

    IPC分类号： H01L21/00

    CPC分类号： H01L31/022425 ,  C23C14/28 ,  H01L31/0682 ,  Y02E10/547

    摘要： A photovoltaic cell, the cell comprising: a silicon substrate of bulk silicon material having front and rear surfaces; an emitter layer on the rear surface of said substrate; elongate channels through the emitter layer; elongate contacts to the bulk of the silicon substrate within at least some of the elongate channels, wherein the contacts are narrower than the channels; and gaps in the emitter between at least some of the elongate contacts and the emitter layer on the sides of the contacts.

    摘要翻译： 一种光伏电池，所述电池包括：具有前表面和后表面的体硅材料的硅衬底; 在所述衬底的后表面上的发射极层; 细长通道穿过发射极层; 在至少一些细长通道内的硅衬底本体的细长接触，其中触点比通道窄; 以及发射器中至少一些细长触头和触点侧面上的发射极层之间的间隙。

    SOLAR CELLS AND METHOD OF MANUFACTURING THEREOF
    4.
    发明申请
    SOLAR CELLS AND METHOD OF MANUFACTURING THEREOF 有权
    太阳能电池及其制造方法

    公开(公告)号：US20110197965A1

    公开(公告)日：2011-08-18

    申请号：US13123532

    申请日：2009-10-12

    申请人： Moshe Finarov ,  Mikhael Matusovsky ,  Amir Noy

    发明人： Moshe Finarov ,  Mikhael Matusovsky ,  Amir Noy

    IPC分类号： H01L31/0224 ,  H01L21/768

    CPC分类号： H01L31/022425 ,  C23C14/28 ,  H01L31/0682 ,  Y02E10/547

    摘要： A photovoltaic cell, the cell comprising: a silicon substrate of bulk silicon material having front and rear surfaces; an emitter layer on the rear surface of said substrate; elongate channels through the emitter layer; elongate contacts to the bulk of the silicon substrate within at least some of the elongate channels, wherein the contacts are narrower than the channels; and gaps in the emitter between at least some of the elongate contacts and the emitter layer on the sides of the contacts.

    摘要翻译： 一种光伏电池，所述电池包括：具有前表面和后表面的体硅材料的硅衬底; 在所述衬底的后表面上的发射极层; 细长通道穿过发射极层; 在至少一些细长通道内的硅衬底本体的细长接触，其中触点比通道窄; 以及发射器中至少一些细长触头和触点侧面上的发射极层之间的间隙。

    Monitoring apparatus and method particularly useful in photolithographically processing substrates
    9.
    发明授权
    Monitoring apparatus and method particularly useful in photolithographically processing substrates 有权
    监控设备和方法特别适用于光刻处理基板

    公开(公告)号：US08482715B2

    公开(公告)日：2013-07-09

    申请号：US12911371

    申请日：2010-10-25

    申请人： Giora Dishon ,  Moshe Finarov ,  Zvi Nirel ,  Yoel Cohen

    发明人： Giora Dishon ,  Moshe Finarov ,  Zvi Nirel ,  Yoel Cohen

    IPC分类号： G03B27/32 ,  G01B11/00 ,  G01N21/00

    CPC分类号： G03F7/70058 ,  G01B11/14 ,  G01N21/88 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8867 ,  G03F7/3028 ,  G03F7/70525 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/70675 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67155

    摘要： A system for determining at least two properties of a substrate, including a supporting plate configured to support the substrate, and a measurement device coupled to the supporting plate, including an illumination system configured to direct light toward a surface of the substrate, and a detection system coupled to the illumination system and configured to detect light propagating from the surface of the substrate, wherein the measurement device is configured to generate one or more output signals in response to the detected light, and a control unit coupled to the measurement device and configured to determine a first property and a second property of the substrate from the one or more output signals, wherein the first property comprises a presence of macro defects on the substrate, and wherein the second property comprises overlay misregistration in the substrate.

    摘要翻译： 一种用于确定衬底的至少两个性质的系统，包括被配置为支撑衬底的支撑板以及耦合到支撑板的测量装置，包括被配置为将光引向衬底的表面的照明系统，以及检测 耦合到所述照明系统并被配置为检测从所述衬底的表面传播的光，其中所述测量装置被配置为响应于所检测到的光而产生一个或多个输出信号，以及控制单元，耦合到所述测量装置并且被配置 以从所述一个或多个输出信号确定所述衬底的第一特性和第二特性，其中所述第一特性包括所述衬底上的宏观缺陷的存在，并且其中所述第二特性包括在所述衬底中的重叠错位。