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公开(公告)号：US4231195A
公开(公告)日：1980-11-04
申请号：US42237
申请日：1979-05-24
CPC分类号： C04B35/52 , B01J3/062 , B24D3/08 , C04B35/6316 , C04B35/645 , C22C26/00 , B01J2203/062 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/0685 , C04B2235/3826 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/721 , C04B2235/77 , C04B2235/80 , C04B2235/96
摘要： An adherently bonded polycrystalline diamond body is produced by forming a charge composed of a mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy wherein the alloy is in contact or in association with hexagonal boron nitride, confining such charge within a reaction chamber, subjecting the confined charge to a pressure of at least 25 kilobars, heating the pressure-maintained charge to a temperature sufficient to melt the alloy and at which no significant graphitization of the diamond occurs whereby the alloy infiltrates through the interstices between the diamond crystals producing said body.
摘要翻译： 通过形成由大量的共晶富硅合金接触的金刚石晶体组成的电荷，其中合金与六方氮化硼接触或与六方氮化硼结合，从而将这种电荷限制在反应中 将受限制的电荷经受至少25千伏的压力，将保压的电荷加热到足以熔化合金的温度，并且在该温度下不会发生金刚石的显着石墨化，由此合金渗入金刚石晶体之间的间隙 生产身体。
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2.发明授权Silicon carbide and silicon bonded polycrystalline diamond body and method of making it 失效碳化硅和硅胶多晶金刚石体及其制作方法
公开(公告)号：US4151686A
公开(公告)日：1979-05-01
申请号：US867938
申请日：1978-01-09
CPC分类号： C04B35/645 , B01J3/062 , B22F3/26 , B24D3/08 , C04B35/52 , C04B35/6316 , C22C26/00 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3826 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 接触大量元素硅的大量金刚石晶体被限制在压力传递介质中。 所得到的电荷组件经受至少25千瓦的压力，从而对接触质量施加等静压，从而使它们尺寸稳定并增加金刚石晶体的质量密度。 将所得的保压电荷组件加热到足以熔化硅的温度，并且在该温度下不会发生金刚石的显着石墨化，由此硅渗透穿过金刚石晶体之间的间隙，在冷却时产生粘附的整体。
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3.发明授权Polycrystalline diamond and cemented carbide substrate and synthesizing process therefor 失效多晶金刚石和硬质合金基板及其合成工艺
公开(公告)号：US4380471A
公开(公告)日：1983-04-19
申请号：US222812
申请日：1981-01-05
申请人： Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
发明人： Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D3/06 , C04B35/52 , C04B35/6316 , C04B37/006 , C04B37/021 , C04B37/026 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3826 , C04B2235/40 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/604 , C04B2235/616 , C04B2235/656 , C04B2235/6567 , C04B2235/80 , C04B2237/122 , C04B2237/363 , C04B2237/401 , C04B2237/60 , C04B2237/61 , C04B2237/706 , C04B2237/708
摘要： A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.
摘要翻译： 由含硅原子的金属（例如，硅合金）渗透的多晶金刚石体与包含硬质合金的基底结合，所述基底具有在与含硅原子的粘合剂粘合在一起的金刚石和基材之间延伸的耐火材料的屏障，基本上排除迁移 的来自碳化物衬底的固化介质（例如钴）与金刚石体中含硅原子的粘合介质接触。 该方法包括使金刚石粉末，一定数量的含硅原子的金属粘合剂材料，硬质合金体和由选自钽，钒，钼，锆，钨及其合金的材料制成的阻挡层经受一 同时应用高温和高压。
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公开(公告)号：US4234661A
公开(公告)日：1980-11-18
申请号：US19366
申请日：1979-03-12
CPC分类号： C04B41/009 , B24D3/08 , B32B18/00 , C04B35/6455 , C04B41/5002 , C04B41/85 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2237/363 , C04B2237/368 , C04B2237/60 , C04B2237/61 , C04B2237/704 , Y10T428/31504
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和氮化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 所得到的粉末包裹容器的基本均匀的体系被热压，从而产生流体共晶富含硅的合金，并渗入金刚石晶体之间的间隙并与氮化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
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公开(公告)号：US4124401A
公开(公告)日：1978-11-07
申请号：US844448
申请日：1977-10-21
CPC分类号： C04B35/645 , B01J3/062 , C04B35/52 , C04B35/6316 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , B22F2005/001 , C04B2235/3826 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 与大量共晶富含硅的合金接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所形成的基本上均匀的粉末包封容器的等静压系统热压，从而产生流体共晶富含硅的合金，并通过金刚石晶体之间的间隙渗透，在冷却时产生粘附的整体。
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公开(公告)号：US4241135A
公开(公告)日：1980-12-23
申请号：US10748
申请日：1979-02-09
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D18/0009 , B32B18/00 , C04B35/52 , C04B35/565 , C04B35/575 , C04B35/6316 , C04B35/6455 , C04B37/001 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3821 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/421 , C04B2235/422 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2235/721 , C04B2235/728 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2237/361 , C04B2237/363 , C04B2237/365 , C04B2237/525 , C04B2237/61 , C04B2237/704 , Y10S428/911 , Y10T428/24992 , Y10T428/26 , Y10T428/2993 , Y10T428/2995 , Y10T428/30
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和碳化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所得到的粉末包裹容器的基本均匀的体系进行热压，由此产生流体共晶富含硅的合金并渗入金刚石晶体之间的间隙并与碳化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
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公开(公告)号：US4411566A
公开(公告)日：1983-10-25
申请号：US222786
申请日：1981-01-05
CPC分类号： B23P15/30 , C23C26/00 , C23C30/005 , Y10T407/27 , Y10T428/12583
摘要： A self-lubricating cemented carbide cutting tool of special utility in titanium machining having a copper coating bearing a film of copper iodide is provided by coating the tool with a layer of copper, heating to bond the copper to the cemented carbide and thereafter reacting the copper with iodine to form the film of desired thickness.
摘要翻译： 提供一种用于钛加工的特殊用途的自润滑硬质合金切削工具，其具有带有碘化铜膜的铜涂层，通过用铜层涂覆工具，加热以将铜结合到硬质合金，然后使铜 用碘形成所需厚度的膜。
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8.发明授权Composite of bonded cubic boron nitride crystals on a silicon carbide substrate 失效在碳化硅衬底上复合结合的立方氮化硼晶体
公开(公告)号：US4110084A
公开(公告)日：1978-08-29
申请号：US787858
申请日：1977-04-15
申请人： Minyoung Lee , Lawrence E. Szala
发明人： Minyoung Lee , Lawrence E. Szala
IPC分类号： B22F7/06 , B24D3/08 , E21B10/56 , E21B10/567 , B24D3/06
CPC分类号： E21B10/567 , B22F7/06 , B24D3/08 , B22F2999/00
摘要： A mass of cubic boron nitride(CBN) crystals, aluminum or aluminum alloy and a silicon carbide ceramic substrate are disposed in a container which is placed within a pressure-transmitting powder medium. Pressure ranging from about 20,000 psi to about 200,000 psi is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents. To the resulting shaped substantially-isostatic system of powder-enveloped container, heat and pressure are applied simultaneously whereby the aluminum or aluminum alloy is liquefied and infiltrated through the interstices between the CBN crystals and diffused into the contacting face of the silicon carbide substrate sufficiently to produce, upon cooling, an adherently bonded integral composite.
摘要翻译： 立方氮化硼（CBN）晶体，铝或铝合金和碳化硅陶瓷衬底的质量被放置在放置在压力传递粉末介质内的容器中。 对粉末介质施加约20,000psi至约200,000psi的压力，导致将基本上等压的压力施加到容器及其内容物上。 对于所形成的粉末包裹容器的基本均匀的系统，同时施加热和压力，由此铝或铝合金液化并渗透通过CBN晶体之间的间隙并且充分扩散到碳化硅衬底的接触面中，足以 在冷却时产生粘附的整体复合材料。
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公开(公告)号：US4539141A
公开(公告)日：1985-09-03
申请号：US630905
申请日：1984-07-13
申请人： Milivoj K. Brun , Minyoung Lee , Lawrence E. Szala
发明人： Milivoj K. Brun , Minyoung Lee , Lawrence E. Szala
IPC分类号： C04B35/111 , C04B35/488 , C04B35/56 , C04B35/65
CPC分类号： C04B35/645 , C04B35/111 , C04B35/488 , C04B35/5611 , C04B35/65
摘要： A particulate mixture of ceramic powder, free carbon and a hydride of a metal selected from the group consisting of hafnium, niobium, tantalum, titanium, vanadium, zirconium and mixtures thereof is hot pressed decomposing the hydride and reacting the resulting metal with carbon producing a polycrystalline microcomposite comprised of a continuous phase of the carbide of the metal which encapsulates at least about 20% by volume of the ceramic particles and which either encapsulates or is intermixed with the balance of said ceramic particles.
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公开(公告)号：US4407968A
公开(公告)日：1983-10-04
申请号：US412336
申请日：1982-08-27
申请人： Minyoung Lee , Lawrence E. Szala
发明人： Minyoung Lee , Lawrence E. Szala
IPC分类号： C04B35/111 , C04B35/117 , C04B35/10 , C04B35/56
CPC分类号： C04B35/117 , C04B35/111
摘要： A particulate dispersion of Al.sub.2 O.sub.3, elemental non-diamond carbon and a titanium member selected from the group consisting of elemental titanium, TiH.sub.2 and mixtures thereof is formed into a compact and sintered producing a ceramic composite having a minimum Rockwell A hardness of about 92 and being comprised of an Al.sub.2 O.sub.3 phase and a substoichiometric titanium carbide phase.
摘要翻译： 将Al 2 O 3，元素非金刚石碳和选自元素钛，TiH 2及其混合物的钛成分的颗粒分散体形成为紧凑且烧结的，生产具有约92的最小洛氏硬度A的陶瓷复合材料，并且 由Al2O3相和亚化学计量碳化钛相组成。
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