公开(公告)号：US11152318B2

公开(公告)日：2021-10-19

申请号：US16649539

申请日：2018-11-21

申请人： Mitsubishi Electric Corporation

发明人： Tatsunori Yanagimoto ,  Kaori Sato ,  Masao Kikuchi

IPC分类号： H01L23/00 ,  H01L29/16

摘要： A semiconductor device of the present invention includes a first main electrode and a second main electrode respectively disposed on a first main surface and a second main surface of a semiconductor substrate, a protective film disposed on an edge part of the first main electrode; and a first metal film disposed in a region enclosed by the protective film on the first main electrode. The first metal film has a film thickness at a central portion larger than that at a part in contact with the protective film, and has irregularities on a surface thereof.

公开(公告)号：US09443778B2

公开(公告)日：2016-09-13

申请号：US14717309

申请日：2015-05-20

申请人： Mitsubishi Electric Corporation

发明人： Yoshitaka Otsubo ,  Hiroshi Yoshida ,  Junji Fujino ,  Masao Kikuchi ,  Junichi Murai

IPC分类号： H01L21/52 ,  H01L23/053 ,  H01L23/498 ,  H01L23/31 ,  H01L23/32 ,  H01L23/29 ,  H01L21/48 ,  H01L21/54 ,  H01L23/40 ,  H01L23/00 ,  H01L23/13 ,  H01L23/373 ,  H01L23/24

CPC分类号： H01L23/29 ,  H01L21/486 ,  H01L21/52 ,  H01L21/54 ,  H01L23/053 ,  H01L23/13 ,  H01L23/24 ,  H01L23/3178 ,  H01L23/32 ,  H01L23/3735 ,  H01L23/4006 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48139 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00

摘要： It is possible to provide a semiconductor device which can be obtained at a high reliability by warping an insulating substrate stably into a convex shape while ensuring a close contact between a cooling member and the insulating substrate. The semiconductor device includes an insulating substrate, a semiconductor element disposed on a first surface of the insulating substrate, a case connected to the insulating substrate, and a resin filled inside the case. Assuming that the thickness of the insulating substrate is denoted by t1, the thickness of the resin is denoted by t2, the linear expansion coefficient of the insulating substrate is denoted by α1, and the linear expansion coefficient of the resin is denoted by α2, the relationship therebetween satisfies t2≧t1 and α2≧α1, and a second surface of the insulating substrate opposite to the first surface thereof is warped into a convex shape.

摘要翻译： 可以提供一种可以通过使绝缘基板稳定地翘曲成凸形而能够以高可靠性获得的半导体器件，同时确保冷却构件和绝缘基板之间的紧密接触。 半导体器件包括绝缘衬底，设置在绝缘衬底的第一表面上的半导体元件，连接到绝缘衬底的壳体和填充在壳体内的树脂。 假设绝缘基板的厚度为t1，树脂的厚度为t2，绝缘基板的线膨胀系数由α1表示，树脂的线膨胀系数由α2表示， 其关系满足t2≥t1和α2≥α1，并且与其第一表面相对的绝缘基板的第二表面弯曲成凸形。

公开(公告)号：US09484294B2

公开(公告)日：2016-11-01

申请号：US14830248

申请日：2015-08-19

申请人： Mitsubishi Electric Corporation

发明人： Yutaka Yoneda ,  Hidetoshi Ishibashi ,  Masao Kikuchi ,  Tatsunori Yanagimoto

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/48 ,  H01L23/373

CPC分类号： H01L23/49838 ,  H01L23/3735 ,  H01L23/481 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/32225 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2924/00014

摘要： A semiconductor device of the present invention includes a bonding target and an electrode terminal bonded to the bonding target. The electrode terminal and the bonding target are bonded by ultrasonic bonding at a bonding surface to be subjected to bonding. The electrode terminal includes a penetrating hollow part surrounded on at least two sides by the bonding surface.

摘要翻译： 本发明的半导体器件包括接合靶和键合靶的电极端子。 电极端子和接合靶通过超声波接合在接合面上进行接合。 电极端子包括通过接合表面在至少两侧被包围的穿透中空部。

公开(公告)号：US11183457B2

公开(公告)日：2021-11-23

申请号：US16443350

申请日：2019-06-17

申请人： Mitsubishi Electric Corporation

发明人： Yasunari Hino ,  Yo Tanaka ,  Masao Kikuchi

IPC分类号： H01L23/48 ,  H01L23/532 ,  H01L23/49 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

摘要： There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 μm or less. The circuit surface and the external terminal are each made of copper or copper alloy.

公开(公告)号：US20150325493A1

公开(公告)日：2015-11-12

申请号：US14806303

申请日：2015-07-22

申请人： Mitsubishi Electric Corporation

发明人： Noboru MIYAMOTO ,  Masao Kikuchi

IPC分类号： H01L23/34 ,  H01L23/00

CPC分类号： H01L23/34 ,  H01L23/36 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L29/0657 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29013 ,  H01L2224/29014 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/30051 ,  H01L2224/30519 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2924/10155 ,  H01L2924/10158 ,  H01L2924/13055 ,  H01L2924/181 ,  Y10T156/10 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.

摘要翻译： 半导体器件包括：半导体模块，其具有由金属形成的导热部，并且还具有具有导热部露出的表面的模制树脂，通过接合材料固定到半导体模块的冷却体，以及导热 形成在热传导部分和冷却体之间的材料和热耦合。

公开(公告)号：US11088045B2

公开(公告)日：2021-08-10

申请号：US14806303

申请日：2015-07-22

申请人： Mitsubishi Electric Corporation

发明人： Noboru Miyamoto ,  Masao Kikuchi

IPC分类号： H01L23/10 ,  H01L23/34 ,  H01L23/00 ,  H01L23/36 ,  H01L29/06

摘要： A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.