Sensor module
    1.
    发明授权

    公开(公告)号:US12069400B2

    公开(公告)日:2024-08-20

    申请号:US17258087

    申请日:2018-11-22

    发明人: Yutaka Yoneda

    IPC分类号: H01L27/146 H04N5/33

    CPC分类号: H04N5/33 H01L27/14618

    摘要: A sensor module comprising:
    A sensor chip (5) is provided on an upper surface of the substrate (1). A lens (7) is provided above the sensor chip (5) such that a light receiving unit of the sensor chip (5) is positioned in a projection area. A lens cap (8) includes a cap body (8a) surrounding the sensor chip (5) to hold the lens (7), and a cap edge part (8b) protruding outward from a lower end part of the cap body (8a). An ultraviolet-curing type bonding agent (9) bonds the upper surface of the substrate (1) and a lower surface of the lens cap (8). A cutout (10) is provided on an outer side surface of the cap edge part (8b). The bonding agent (9) enters in the cutout (10).

    Optical module
    7.
    发明授权

    公开(公告)号:US11291120B2

    公开(公告)日:2022-03-29

    申请号:US17052293

    申请日:2018-09-07

    摘要: A optical module according to the present invention includes an optical semiconductor device, a package housing the optical semiconductor device, a first pattern provided on an upper surface of the package, a second pattern provided on a side surface continuous with the upper surface of the package, a flexible substrate provided on the first pattern and extending from the upper surface to a side surface side of the package and solder joining the first pattern and the flexible substrate together, wherein the solder is spread between a portion of the flexible substrate, the portion extending from the upper surface to the side surface side of the package, and the second pattern.

    Manufacturing method for power semiconductor device, and power semiconductor device

    公开(公告)号:US10096570B2

    公开(公告)日:2018-10-09

    申请号:US15568130

    申请日:2016-05-31

    IPC分类号: H01L21/607 H01L23/00

    摘要: An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.