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公开(公告)号：US06606149B1
公开(公告)日：2003-08-12
申请号：US09533815
申请日：2000-03-24
IPC分类号： G01J100
CPC分类号： H01J37/304 , H01J2237/30433 , H01J2237/3175
摘要： A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.
摘要翻译： 一种能量束装置的光学系统的调整方法，该方法是利用能量束对样品上的标记进行二维或二维扫描而得到的标记信号。 标记具有一维或二维周期性结构。 通过用光束扫描标记来检测第一标记信号。 标记设置在光学系统的光轴上。 通过用光束扫描标记来检测第二标记信号。 标记位于偏离光轴的位置。 基于第一和第二标记信号之间的相位差来确定偏转位置的偏差。
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2.发明授权公开(公告)号：US06617592B2
公开(公告)日：2003-09-09
申请号：US09810478
申请日：2001-03-19
申请人： Jun Takamatsu , Kiyoshi Hattori , Hitoshi Sunaoshi , Naoharu Shimomura , Kiminobu Akeno , Munehiro Ogasawara
发明人： Jun Takamatsu , Kiyoshi Hattori , Hitoshi Sunaoshi , Naoharu Shimomura , Kiminobu Akeno , Munehiro Ogasawara
IPC分类号： A61N500
CPC分类号： H01J37/304 , H01J2237/20292 , H01J2237/3175
摘要： A charged particle beam system includes a chamber having an opening in a ceiling, a table placed immediately below the opening and movable in one direction, a laser interferometer set in the chamber, including a laser oscillator placed along the moving direction of the table, a movable mirror placed on the table side opposing the oscillator, a beam splitter placed to cross the laser beam and a fixed mirror fixed, immediately above the beam splitter, on the ceiling of the chamber, an optical lens barrel having an opening communicating with the opening of the chamber, and a beam gun set on a ceiling of the optical lens barrel to irradiate a specimen placed on the table with a charged particle beam through the first and second openings. At least an upper wall portion from the opening to the fixed mirror of the chamber is made of an invar alloy.
摘要翻译： 带电粒子束系统包括：在天花板上具有开口的腔室，放置在开口正下方并可在一个方向上移动的工作台;设置在腔室中的激光干涉仪，包括沿着工作台移动方向放置的激光振荡器， 放置在与振荡器相对的台面侧的可移动反射镜，放置成穿过激光束的分束器和在分束器正上方固定的固定镜，位于腔室的天花板上，光学透镜镜筒具有与开口连通的开口 以及设置在光学镜筒的天花板上的射束，以通过第一和第二开口照射放置在桌子上的带有带电粒子束的样本。 至少从腔室的开口到固定反射镜的上壁部分由凹入合金制成。
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公开(公告)号：US06836319B2
公开(公告)日：2004-12-28
申请号：US10819201
申请日：2004-04-07
IPC分类号： G01J100
CPC分类号： H01J37/304 , H01J2237/30433 , H01J2237/3175
摘要： A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.
摘要翻译： 一种能量束装置的光学系统的调整方法，该方法是利用能量束对样品上的标记进行二维或二维扫描而得到的标记信号。 标记具有一维或二维周期性结构。 通过用光束扫描标记来检测第一标记信号。 标记设置在光学系统的光轴上。 通过用光束扫描标记来检测第二标记信号。 标记位于偏离光轴的位置。 基于第一和第二标记信号之间的相位差来确定偏转位置的偏差。
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公开(公告)号：US06781680B1
公开(公告)日：2004-08-24
申请号：US10602701
申请日：2003-06-25
IPC分类号： G01J100
CPC分类号： H01J37/304 , H01J2237/30433 , H01J2237/3175
摘要： A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.
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5.发明授权Charged particle beam optical element charged particle beam exposure apparatus and method of adjusting the same 失效带电粒子束光学元件带电粒子束曝光装置及其调整方法
公开(公告)号：US6028317A
公开(公告)日：2000-02-22
申请号：US5640
申请日：1998-01-12
IPC分类号： G21K1/087 , G21K1/093 , H01J3/18 , H01J37/12 , H01J37/14 , H01J37/305 , H01L21/027 , G21K1/08 , H01J3/14
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G21K1/087 , H01J3/18 , H01J37/12 , H01J2237/121 , H01J2237/151 , H01J2237/153 , H01J2237/3175
摘要： An optical element includes two electrodes 1 and 2 arranged at a distance to oppose each other and configured to converge an electron beam. The opposing surfaces of the electrodes 1 and 2 are so formed as to be cylindrically symmetrical along the beam passing direction and to form curves obtained by deforming hyperbolas in a direction perpendicular to the beam passing direction, in order that an electric field whose effective part except for an arbitrary constant of the field potential is given by.phi.=(k/2)r.sup.2 -.alpha.lnr-kz.sup.2is spatially partially formed in a cylindrical coordinate system defined by (r, z, .theta.).
摘要翻译： 光学元件包括两个彼此相对配置的距离并配置成会聚电子束的电极1和2。 电极1和2的相对表面被形成为沿着光束通过方向为圆柱对称，并且形成通过使垂直于光束通过方向的方向使双曲线变形而获得的曲线，以便将有效部分除外 对于场电位的任意常数由phi =（k / 2）给出，r2-α1nr-kz2在空间上部分地形成在由（r，z，θ）定义的圆柱坐标系中。
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6.发明申请CHARGED-PARTICLE BEAM LITHOGRAPHY WITH GRID MATCHING FOR CORRECTION OF BEAM SHOT POSITION DEVIATION 有权带光束匹配的充电粒子光栅用于校正光束位置偏差公开(公告)号：US20080067441A1
公开(公告)日：2008-03-20
申请号：US11754598
申请日：2007-05-29
申请人： Seiji WAKE , Hitoshi Sunaoshi
发明人： Seiji WAKE , Hitoshi Sunaoshi
IPC分类号： H01J37/08
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , H01J37/244 , H01J37/3005 , H01J37/3023 , H01J37/3174 , H01J2237/24564 , H01J2237/30461
摘要： A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.
摘要翻译： 带电粒子束图案写入装置包括电场强度计算器单元，该电场强度计算单元用于计算由于带电粒子束的照射引起的带电电荷而与工件的指定区域不同的另一区域的电场强度 校正量计算器单元，其基于电场强度计算用于在将带电粒子束照射到上述另一区域时照射照射位置的校正量，以及基于校正照射的图案写入单元， 将带电粒子束量化到另一区域，从而在其中写入或“绘制”图案。
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公开(公告)号：US08367276B2
公开(公告)日：2013-02-05
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译： 在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。 掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。 掩模层由含硅的材料制成。 掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。
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8.发明授权Focusing method of charged particle beam and astigmatism adjusting method of charged particle 有权带电粒子的聚焦方法和带电粒子的散光调节方法公开(公告)号：US08188443B2
公开(公告)日：2012-05-29
申请号：US12043707
申请日：2008-03-06
IPC分类号： H01J3/14
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/304 , H01J2237/1532 , H01J2237/216
摘要： A focusing method of a charged particle beam includes measuring a first set value to focus a beam on a position of a reference plane by using a lens coil, acquiring a first factor to change a set value of an electrostatic lens depending on a distance and a second factor to change a set value of the coil depending on a distance, measuring a level distribution of a target plane, correcting the first set value by using the second factor to correct a focal point position of the beam in the coil from the position of the reference plane to an intermediate level position of the level distribution of the target plane, and correcting a second set value of the lens depending on a level position of the target plane by using the first factor to correct a focal point position of the beam by the lens.
摘要翻译： 带电粒子束的聚焦方法包括测量第一设定值以通过使用透镜线圈将光束聚焦在参考平面的位置上，获取根据距离改变静电透镜的设定值的第一因素，以及 根据距离来改变线圈的设定值的第二因素，测量目标平面的电平分布，通过使用第二因素校正第一设定值，以从线圈的位置校正线圈中的焦点位置 所述基准平面与所述目标平面的水平分布的中间位置相对应，并且通过使用所述第一因子来校正所述目标平面的水平位置的所述透镜的第二设定值，以通过所述第一因子校正所述光束的焦点位置 镜头。
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公开(公告)号：US07923704B2
公开(公告)日：2011-04-12
申请号：US12137146
申请日：2008-06-11
申请人： Hitoshi Sunaoshi
发明人： Hitoshi Sunaoshi
IPC分类号： G21K5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/185 , H01J37/304 , H01J2237/30455
摘要： A charged particle beam writing method includes writing a pattern on a first target object by using a charged particle beam in a writing apparatus; and conveying a second target object after having written the pattern on the first target object, wherein even though the second target object is arranged on any one of conveying paths including a carry-out port and a carry-in port of the writing apparatus, a conveying operation for the second target object is not performed during writing the pattern on the first target object.
摘要翻译： 带电粒子束写入方法包括通过在书写装置中使用带电粒子束将图案写在第一目标物体上; 以及在将所述图案写入所述第一目标物体之后传送第二目标物体，其中即使所述第二目标物体布置在包括所述书写装置的进出口和进入端口的传送路径中的任何一个上， 在将图案写入第一目标对象时不执行用于第二目标对象的传送操作。
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公开(公告)号：US20090075185A1
公开(公告)日：2009-03-19
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi OKUBO , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
IPC分类号： G03F1/00
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译： 在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。 掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。 掩模层由含硅的材料制成。 掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。
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