公开(公告)号：US4690764A

公开(公告)日：1987-09-01

申请号：US916730

申请日：1986-10-08

申请人： Munehiro Okumura ,  Takao Nomura ,  Tadashi Matsuda ,  Shojiro Kido ,  Shinichi Ishii ,  Hideki Hattori

发明人： Munehiro Okumura ,  Takao Nomura ,  Tadashi Matsuda ,  Shojiro Kido ,  Shinichi Ishii ,  Hideki Hattori

IPC分类号： C02F3/18 ,  B01F3/04 ,  B01F3/08 ,  B01F5/02 ,  B01F13/10 ,  C02F3/12 ,  C02F3/20

CPC分类号： C02F3/1294 ,  B01F13/1013 ,  B01F13/1016 ,  B01F3/0451 ,  B01F3/0876 ,  B01F5/0212 ,  B01F3/04099 ,  Y02W10/15 ,  Y10S261/75

摘要： This invention provides an aerator comprising a jet stream generator for ejecting a gas and a liquid in a mixed state from a nozzle, and a tubular flow straightener for mixing the bubble-containing stream ejected from the nozzle with ambient water and discharging the resulting mixture from the discharge orifice thereof, characterized in that the flow straightener has a tubular form whose internal diameter is reduced from the inlet toward the discharge orifice through at least a part of its length.This aerator can produce a stream containing minute gas bubbles, even when a gas is supplied thereto in such a large amount as to give a gas-to-liquid volume ratio of 3/1.

摘要翻译： 本发明提供了一种曝气器，其包括用于从喷嘴喷射气体和混合状态的液体的喷射流发生器，以及用于将从喷嘴喷射的含气泡流与环境水混合的管状流动矫直机，并将所得混合物从 其排出孔，其特征在于，所述流动矫直机具有管状形式，其内径通过其长度的至少一部分从所述入口朝向所述排放口减小。 即使在大量供给气体的情况下，气体与液体的体积比为3/1，该充气机也能够产生含有微小气泡的流。

公开(公告)号：US20110157018A1

公开(公告)日：2011-06-30

申请号：US12859026

申请日：2010-08-18

申请人： Tadashi Matsuda

发明人： Tadashi Matsuda

IPC分类号： G06F3/033

CPC分类号： G06F1/1616 ,  G06F1/169

摘要： According to one embodiment, an electronic device includes: a casing; and an operating module exposed on an external surface of the casing at a nearer side than a keyboard in a depth direction of the casing, the operating module including a pointer operating module receiving an operation to move a pointer on a screen, a first click operating module receiving a click operation associated with a position of the pointer, and a second click operating module receiving a click operation associated with the position of the pointer, wherein among the pointer operating module, and the first and second click operating modules, the pointer operating module is t a nearest side in the depth direction, the first click operating module is at a farther side than the pointer operating module, and the second click operating module is at a farther side than the first click operating module in the depth direction.

摘要翻译： 根据一个实施例，电子设备包括：壳体; 以及操作模块，其在所述壳体的深度方向上比键盘的更靠近的一侧露出在所述壳体的外表面上，所述操作模块包括：指示器操作模块，其接收将指示器移动到屏幕上的操作;第一点击操作 接收与指示器的位置相关联的点击操作的模块，以及接收与指示器的位置相关联的点击操作的第二点击操作模块，其中在指针操作模块和第一和第二点击操作模块之间，指针操作 模块在深度方向上最靠近，第一点击操作模块位于比指针操作模块更远的一侧，并且第二点击操作模块在深度方向上比第一点击操作模块更远一侧。

公开(公告)号：US06818940B2

公开(公告)日：2004-11-16

申请号：US10821956

申请日：2004-04-12

申请人： Tadashi Matsuda

发明人： Tadashi Matsuda

IPC分类号： H01L27108

CPC分类号： H01L29/0696 ,  H01L29/4238 ,  H01L29/7397

摘要： An insulated gate bipolar transistor includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type formed on a top surface of the first semiconductor layer, a base layer of the first conductivity type formed on a top surface of the second semiconductor layer, a plurality of gate electrodes each of which is buried in a trench with a gate insulation film interposed therebetween, the trench being formed in the base layer to a depth reaching said second semiconductor layer from a surface of the base layer, each the gate electrode having an upper surface of a rectangular pattern with different widths in two orthogonal directions, the gate electrodes being disposed in a direction along a short side of the rectangular pattern, and emitter layers of the second conductivity type formed in the surface of the base layer to oppose both end portions of each the gate electrode in a direction along a long side of the rectangular pattern.

摘要翻译： 绝缘栅双极晶体管包括第一导电类型的第一半导体层，形成在第一半导体层的顶表面上的第二导电类型的第二半导体层，形成在第一导电类型的顶表面上的第一导电类型的基极层 所述第二半导体层，多个栅极，每个栅电极埋设在沟槽中，栅极绝缘膜插入其间，所述沟槽形成在所述基极层中，从所述基底层的表面到达所述第二半导体层的深度， 每个栅电极具有在两个正交方向上具有不同宽度的矩形图案的上表面，栅电极沿着矩形图案的短边方向设置，并且第二导电类型的发射极层形成在 所述基底层在沿所述矩形图案的长边的方向上与所述栅电极的两端部相对。

公开(公告)号：US5350934A

公开(公告)日：1994-09-27

申请号：US26420

申请日：1993-03-04

申请人： Tadashi Matsuda

发明人： Tadashi Matsuda

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/739 ,  H01L29/78 ,  H01L29/80 ,  H03K17/00 ,  H01L29/10

CPC分类号： H01L29/739 ,  H01L29/7813 ,  H01L29/7832

摘要： A conductivity modulation type field effect transistor comprises an n.sup.- type low concentration impurity layer of high resistance formed on an n.sup.+ type silicon substrate, a first channel region of a given width formed on the low concentration impurity layer, a pair of p type gates oppositely formed with the first channel region therebetween, an n.sup.- type low concentration impurity layer formed on the first channel region including the p.sup.+ gate, a p channel layer including two channel regions formed on the n.sup.- type low concentration impurity layer, and a pair of n.sup.+ type sources formed on the second channel region with their center aligned with a center of the first gate means, in which, after the formation of the n.sup.+ type source, a groove is formed at each side of a respective semiconductor device, first gate electrodes are provided on the bottom surface and side wall of the groove with a gate oxide film therebetween whereby the transistor has the blocking capability of achieving a normally OFF state.

摘要翻译： 电导率调制型场效应晶体管包括形成在n +型硅衬底上的高电阻的n-型低浓度杂质层，形成在低浓度杂质层上的给定宽度的第一沟道区，一对p型栅相对 在其间形成有第一沟道区，形成在包括形成在n型低浓度杂质层上的包含两个沟道区的p +栅极，ap沟道层的第一沟道区上的n型低浓度杂质层和一对n + 形成在第二沟道区上的源极，其中心与第一栅极装置的中心对准，其中在形成n +型源之后，在各个半导体器件的每一侧形成有沟槽，第一栅电极 设置在沟槽的底表面和侧壁上，栅极氧化膜之间，由此晶体管具有实现正常断开的阻挡能力 状态。

公开(公告)号：US07454395B2

公开(公告)日：2008-11-18

申请号：US11403754

申请日：2006-04-13

申请人： Tadashi Matsuda

发明人： Tadashi Matsuda

IPC分类号： G06N5/02

CPC分类号： G06F17/50 ,  G06F2217/74

摘要： According to one embodiment, an information processing apparatus includes a memory unit which stores attribute information which indicates a characteristic quantity of each of components constituting a product, and parent-child relationship information which indicates a parent-child relationship between the components, a unit which calculates positions on a tree diagram of nodes corresponding to the components, a unit which calculates, for each of the components, a sum of the characteristic quantity of the component and the characteristic quantities of all child components belonging to the component, a unit which determines, for each of the nodes, a mode of a branch line which is to connect the node to a parent node thereof, based on the sum calculated for each of the components, and a unit which creates the tree diagram based on the calculated positions of the nodes and the determined mode of the branch line corresponding to each node.

摘要翻译： 根据一个实施例，信息处理设备包括存储指示构成产品的每个组件的特征量的属性信息的存储单元，以及指示组件之间的父子关系的父子关系信息， 计算与组件相对应的节点的树形图上的位置;对于每个组件计算组件的特征量和属于该组件的所有子组件的特征量之和的单元，该单元确定 对于每个节点，基于为每个组件计算的和，将节点连接到其父节点的分支线路的模式，以及基于所计算的位置来创建树形图的单元 节点和分支线的确定模式对应于每个节点。

公开(公告)号：US20070282976A1

公开(公告)日：2007-12-06

申请号：US11806204

申请日：2007-05-30

申请人： Tadashi Matsuda

发明人： Tadashi Matsuda

IPC分类号： G06F15/16 ,  G06F12/00

CPC分类号： G06F16/58

摘要： According to one embodiment, an image display control system includes a transmitting-side information processing device comprising shared data and a receiving-side information processing device viewing the shared data via a network. The transmitting-side information processing device further comprises transmission means for, upon receiving an access from the receiving-side information processing device, transmitting list information of the shared data and local time information in a location where the transmitting-side information processing device is provided, to the receiving-side information processing device making the access. The receiving-side information processing device includes storage means for storing time-corresponding data, and display means for associating the time-corresponding data which are read with the received list information of the shared data, and displaying the shared data together with the time-corresponding data.

摘要翻译： 根据一个实施例，图像显示控制系统包括包括共享数据的发送侧信息处理设备和经由网络观看共享数据的接收侧信息处理设备。 发送侧信息处理装置还包括：发送装置，用于在从接收侧信息处理装置接收到接收到发送方信息处理装置的位置时发送共享数据和本地时间信息的列表信息 到达接入侧的信息处理装置。 接收侧信息处理装置包括用于存储与时间相关的数据的存储装置，以及用于将读取的时间对应数据与所接收的共享数据的列表信息相关联并显示共享数据的显示装置， 相应的数据。

公开(公告)号：US5347158A

公开(公告)日：1994-09-13

申请号：US107616

申请日：1993-08-18

申请人： Tadashi Matsuda ,  Tetsujiro Tsunoda

发明人： Tadashi Matsuda ,  Tetsujiro Tsunoda

IPC分类号： H01L23/64 ,  H01L25/07 ,  H01L25/18 ,  H02M7/00 ,  H01L23/16 ,  H01L23/02 ,  H01L39/02

CPC分类号： H01L23/645 ,  H01L24/72 ,  H01L24/73 ,  H01L25/072 ,  H02M7/003 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30107

摘要： A semiconductor device for accomplishing high speed switchings with a large current includes a radiation plate, a first conductor fixed on said radiation plate, a first insulating layer fixed on said first conductor, a second conductor fixed on said first insulating layer, at least one semiconductor element and a second insulating layer fixed on said second conductor, a third conductor fixed on said second insulating layer, a fourth conductor for electrically connecting the surface electrode of said semiconductor element with said third conductor, a first power terminal fixed on said second conductor, and a second power terminal fixed on said third conductor. To reduce the internal inductance, said first and second power terminals have a flat part whose width is larger in length than the height. Also, these terminals are adjacently arranged substantially parallel to each other. In this device, the main currents on said first and second power terminals, and on said second and fourth conductors flow in the opposite directions, thus further reducing the internal inductance.

摘要翻译： 用于实现具有大电流的高速切换的半导体器件包括辐射板，固定在所述辐射板上的第一导体，固定在所述第一导体上的第一绝缘层，固定在所述第一绝缘层上的第二导体，至少一个半导体 元件和固定在所述第二导体上的第二绝缘层，固定在所述第二绝缘层上的第三导体，用于将所述半导体元件的表面电极与所述第三导体电连接的第四导体，固定在所述第二导体上的第一电源端子， 以及固定在所述第三导体上的第二电源端子。 为了减小内部电感，所述第一和第二电源端子具有宽度比高度宽的宽度的平坦部分。 而且，这些端子彼此相邻地相邻布置。 在该装置中，所述第一和第二电源端子以及所述第二和第四导体上的主电流沿相反方向流动，从而进一步减小内部电感。

公开(公告)号：US4528575A

公开(公告)日：1985-07-09

申请号：US414363

申请日：1982-08-27

申请人： Tadashi Matsuda ,  Tsuneo Mizuno ,  Noboru Takada

发明人： Tadashi Matsuda ,  Tsuneo Mizuno ,  Noboru Takada

IPC分类号： B41J2/175 ,  B41J2/045 ,  B41J2/055 ,  B41J2/14 ,  B41J2/15 ,  B41J2/16 ,  G01D15/16

CPC分类号： B41J2/15 ,  B41J2/14233 ,  B41J2002/14362 ,  B41J2002/14379

摘要： An ink jet printing head which includes a head body provided with an ink filling port (18), a plurality of rows of nozzles (32A.sub.1 through 32A.sub.5, 40B.sub.1 through 40B.sub.5) arrayed in a staggered formation, pressure chambers (21A.sub.1, 21A.sub.2, . . . , 21B.sub.1, 21B.sub.2, . . . ), one for each of the nozzles, and ink passages (28A.sub.1, . . . , 33A.sub.1, . . . , 38B.sub.1, . . . , 41B.sub.1, . . . ) connecting the ink filling port with the nozzles via corresponding pressure chambers. (19A.sub.1 through 19A.sub.5, 19B.sub.1 though 19B.sub.5). The pressure chambers are formed inside the head body and adjacent to the surface of at least one side of the head body. Piezoelectric elements are mounted on the outside of the head body at positions corresponding to the pressure chambers.

摘要翻译： PCT No.PCT / JP81 / 00423 Sec。 371日期1982年8月27日第 102（e）日期1982年8月27日PCT提交1981年12月28日PCT公布。 公开号WO82 / 02363 日本1982年7月22日。一种喷墨打印头，其包括设置有墨水填充口（18）的头主体，排列成交错地层的多排喷嘴（32A1至32A5,40B1至40B5），压力室 （21A1，21A2，...，21B1,21B2，...），每个喷嘴一个，以及墨水通道（28A1，...，33A1，...，38B1，...，41B1，...） 通过相应的压力室将墨水填充口与喷嘴连接起来。 （19A1至19A5,19B1至19B5）。 压力室形成在头部本体内并且邻近头部本体的至少一侧的表面。 压电元件在对应于压力室的位置处安装在头体的外侧。

公开(公告)号：US06936893B2

公开(公告)日：2005-08-30

申请号：US10677260

申请日：2003-10-03

申请人： Masahiro Tanaka ,  Shinichi Umekawa ,  Tadashi Matsuda ,  Masakazu Yamaguchi

发明人： Masahiro Tanaka ,  Shinichi Umekawa ,  Tadashi Matsuda ,  Masakazu Yamaguchi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/739 ,  H01L29/76

CPC分类号： H01L29/0696 ,  H01L29/0619 ,  H01L29/7397

摘要： The power semiconductor device includes a plurality of trenches disposed in a surface of a semiconductor active layer to reach a first base layer of a first conductivity type. The trenches are disposed at intervals to partition a main cell and a dummy cell. In the main cell, a second base layer of a second conductivity type and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode and gate insulating film are disposed in each trench. A partition structure is disposed in the surface of the semiconductor active layer to electrically isolate the buffer layer from the emitter electrode.

摘要翻译： 功率半导体器件包括设置在半导体有源层的表面中以到达第一导电类型的第一基极层的多个沟槽。 沟槽以间隔设置以分隔主电池和虚拟电池。 在主电池中，设置第二导电类型的第二基极层和第一导电类型的发射极层。 在虚拟电池中设置第二导电类型的缓冲层。 栅极电极和栅极绝缘膜设置在每个沟槽中。 在半导体有源层的表面设置分隔结构，以将缓冲层与发射极电隔离。

公开(公告)号：US5485022A

公开(公告)日：1996-01-16

申请号：US273758

申请日：1994-07-12

申请人： Tadashi Matsuda

发明人： Tadashi Matsuda

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/739 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L29/7395 ,  H01L29/0834

摘要： An Insulated Gate Bipolar Transistor (IGBT) having a new structure capable of performing a low on-voltage and a high-speed turn-off is provided. A P-type collector region 1 of IGBT is not formed on the entire reverse surface of an N-type base region 2, but formed only on its part, and a metal collector electrode 9 is electrically connected only with the surface to which the P-type collector region 1 exposes. An area of a diffusion window in a collector region is relatively reduced, whereby the impurity concentration of the entire collector region is set at a lower value and hole injection efficiency is decreased. At the same time it is possible to obtain high surface concentration with deep diffusion depth of the collector region required to form a favorable ohmic contact.

摘要翻译： 提供具有能够执行低导通电压和高速关断的新结构的绝缘栅双极型晶体管（IGBT）。 IGBT的P型集电极区域1不形成在N型基极区域2的整个反面上，而仅形成在其一部分上，金属集电极电极9仅与P型集电极区域1电连接， 型收集器区域1暴露。 集电极区域的扩散窗口的面积相对减少，集电体区域的杂质浓度被设定为较低值，空穴注入效率降低。 同时可以通过形成良好的欧姆接触所需的集电极区域的深扩散深度获得高的表面浓度。