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1.发明授权Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element 有权可变电阻元件，具有可变电阻元件的半导体器件，半导体器件制造方法和使用可变电阻元件的编程方法公开(公告)号：US09548115B2
公开(公告)日：2017-01-17
申请号：US14385623
申请日：2013-03-14
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0007 , G11C2013/0073 , G11C2013/009 , G11C2213/15 , G11C2213/17 , H01L27/101 , H01L45/085 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/1273 , H01L45/144 , H01L45/146 , H01L45/1608
摘要： This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.
摘要翻译： 该可变电阻元件设置有可变电阻膜，与可变电阻膜的一个表面接触设置的第一电极和与可变电阻膜的另一个表面接触的第二电极。 第一电极和第二电极分别具有角部，并且将第一和第二电极的角部之间的距离设定为等于第一和第二电极之间的最短距离。 此外，可变电阻元件具有设置在可变电阻膜的一个表面上的第三电极。
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2.发明授权Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device 有权可变电阻元件，包括可变电阻元件的半导体器件，以及用于制造可变电阻元件和半导体器件的方法公开(公告)号：US08796659B2
公开(公告)日：2014-08-05
申请号：US13635858
申请日：2011-03-16
IPC分类号： H01L29/04
CPC分类号： H01L51/0094 , C23C16/0272 , C23C16/401 , C23C16/50 , C23C16/515 , C23C16/52 , H01L27/2463 , H01L45/1233 , H01L45/14 , H01L45/1616 , H01L51/0591
摘要： A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
摘要翻译： 可变电阻元件包括插入在第一和第二电极之间的第一电极，第二电极和离子传导层。 离子传导层含有至少含有氧和碳的有机氧化物。 离子传导层中的碳浓度分布使得靠近第一电极的区域中的碳浓度大于靠近第二电极的区域中的碳浓度。
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公开(公告)号：US08586958B2
公开(公告)日：2013-11-19
申请号：US13139553
申请日：2010-01-08
CPC分类号： G11C13/0009 , G11C2213/11 , G11C2213/34 , G11C2213/55 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625 , H01L45/1633 , H01L45/1675
摘要： A switching element includes: a first electrode supplying metal ions; a second electrode less ionizable than the first electrode; and an ion conducting layer arranged between the first electrode and the second electrode and containing a metal oxide that can conduct the metal ions. The ion conducting layer includes two or more layers of different types, and one of the ion conducting layers that is closest to the first electrode has a larger diffusion coefficient for the metal ions than that of the other ion conducting layer(s).
摘要翻译： 开关元件包括：提供金属离子的第一电极; 比第一电极可离子化的第二电极; 以及离子传导层，其设置在所述第一电极和所述第二电极之间，并且含有能够导电所述金属离子的金属氧化物。 离子传导层包括两层或更多层不同的类型，最靠近第一电极的一个离子传导层的金属离子的扩散系数比其它离子传导层的扩散系数大。
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公开(公告)号：US20110260133A1
公开(公告)日：2011-10-27
申请号：US13139553
申请日：2010-01-08
CPC分类号： G11C13/0009 , G11C2213/11 , G11C2213/34 , G11C2213/55 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625 , H01L45/1633 , H01L45/1675
摘要： A switching element includes: a first electrode supplying metal ions; a second electrode less ionizable than the first electrode; and an ion conducting layer arranged between the first electrode and the second electrode and containing a metal oxide that can conduct the metal ions. The ion conducting layer includes two or more layers of different types, and one of the ion conducting layers that is closest to the first electrode has a larger diffusion coefficient for the metal ions than that of the other ion conducting layer(s).
摘要翻译： 开关元件包括：提供金属离子的第一电极; 比第一电极可离子化的第二电极; 以及离子传导层，其设置在所述第一电极和所述第二电极之间，并且含有能够导电所述金属离子的金属氧化物。 离子传导层包括两层或更多层不同的类型，最靠近第一电极的一个离子传导层的金属离子的扩散系数比其它离子传导层的扩散系数大。
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公开(公告)号：US09059402B2
公开(公告)日：2015-06-16
申请号：US13380092
申请日：2010-06-21
CPC分类号： H01L45/1233 , G11C13/0011 , G11C2213/15 , G11C2213/32 , G11C2213/56 , H01L45/085 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.
摘要翻译： 所公开的电阻可变元件具有高可靠性，高密度化和良好的绝缘性能。 该装置提供一种电阻可变元件，其中包括主要包含铜的金属，阀金属的氧化物膜，含氧的离子传导层和第二电极的第一电极按此顺序层压。
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6.发明申请RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING RESISTANCE CHANGE ELEMENT 有权电阻变化元件，半导体器件和形成电阻变化元件的方法公开(公告)号：US20120280200A1
公开(公告)日：2012-11-08
申请号：US13508243
申请日：2010-11-08
CPC分类号： H01L45/1616 , H01C7/006 , H01C7/18 , H01C17/08 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/1675
摘要： A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
摘要翻译： 根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。
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公开(公告)号：US20110272664A1
公开(公告)日：2011-11-10
申请号：US13139602
申请日：2010-01-08
CPC分类号： H01L45/08 , H01L27/101 , H01L27/228 , H01L27/2436 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
摘要翻译： 半导体器件包括半导体衬底; 半导体衬底上的多层布线层结构; 以及所述多层布线层结构中的可变电阻元件，其中所述可变电阻元件包括电阻在顶部电极和底部电极之间变化的可变电阻元件膜，其中所述多层布线层结构至少包括与 底部电极和电连接到顶部电极的插头，并且其中布线也用作底部电极。
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公开(公告)号：US10256400B2
公开(公告)日：2019-04-09
申请号：US15173875
申请日：2016-06-06
摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
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9.发明授权Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element 有权能够在低电压下工作的电阻变化元件，半导体器件以及用于形成电阻变化元件的方法公开(公告)号：US08946672B2
公开(公告)日：2015-02-03
申请号：US13508243
申请日：2010-11-08
CPC分类号： H01L45/1616 , H01C7/006 , H01C7/18 , H01C17/08 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/1675
摘要： A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
摘要翻译： 根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。
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10.发明申请VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT, AND METHODS FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE 有权可变电阻元件，包括可变电阻元件的半导体器件，以及制造可变电阻元件和半导体器件的方法公开(公告)号：US20130009123A1
公开(公告)日：2013-01-10
申请号：US13635858
申请日：2011-03-16
IPC分类号： H01L45/00
CPC分类号： H01L51/0094 , C23C16/0272 , C23C16/401 , C23C16/50 , C23C16/515 , C23C16/52 , H01L27/2463 , H01L45/1233 , H01L45/14 , H01L45/1616 , H01L51/0591
摘要： A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
摘要翻译： 可变电阻元件包括插入在第一和第二电极之间的第一电极，第二电极和离子传导层。 离子传导层含有至少含有氧和碳的有机氧化物。 离子传导层中的碳浓度分布使得靠近第一电极的区域中的碳浓度大于靠近第二电极的区域中的碳浓度。
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