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    Composite electronic component
    1.
    发明授权
    Composite electronic component 有权

    公开(公告)号：US10290425B2

    公开(公告)日：2019-05-14

    申请号：US15209917

    申请日：2016-07-14

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Satoshi Shindo ,  Yutaka Takeshima

    IPC: H01G4/33 ,  H01G4/40 ,  H01L49/02 ,  H01L23/29 ,  H01L23/528 ,  H01L27/01 ,  H01L23/498

    Abstract: A composite electronic component that includes an insulation substrate having a principal surface; a thin-film capacitor on the principal surface of the insulation substrate; a laminated insulation protection layer covering the thin-film capacitor; a first extended wiring in the insulation protection layer and connected to the thin-film capacitor; a first resin layer on the insulation protection layer, first and second thin-film resistors in the first resin layer; a through-hole penetrating the first resin layer in a thickness direction thereof so as to expose the first extended wiring; a first rewiring in the first resin layer and connected to the first extended wiring through the through-hole; and a second resin layer on the first resin layer. The interior of the through-hole is filled with the second resin layer, and the through-hole does not overlap the thin-film capacitor.

    Stretchable wiring board and device with adhesive patch for living body
    3.
    发明授权
    Stretchable wiring board and device with adhesive patch for living body 有权

    公开(公告)号：US12048091B2

    公开(公告)日：2024-07-23

    申请号：US17839775

    申请日：2022-06-14

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Keisuke Nishida ,  Hayato Katsu ,  Yutaka Takeshima

    IPC: H05K1/02 ,  A61B5/00

    CPC classification number: H05K1/0283 ,  A61B5/6833

    Abstract: A stretchable wiring board that includes: a stretchable substrate; a first stretchable wiring extending in a length direction on a main surface side of the stretchable substrate; and a second stretchable wiring extending in the length direction on the main surface side of the stretchable substrate, the second stretchable wiring having a first portion with a first region overlapping on top of the first stretchable wiring on an end portion side of the first stretchable wiring, and a width of the first portion of the second stretchable wiring in a width direction orthogonal to the length direction is smaller than a width of the first stretchable wiring.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210226000A1

    公开(公告)日：2021-07-22

    申请号：US17065931

    申请日：2020-10-08

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Koichi Nishita ,  Masaki Takeuchi ,  Yutaka Takeshima ,  Kazuhiro Inoue

    IPC: H01L49/02 ,  H01L23/66 ,  H01G4/30 ,  H01L27/08

    Abstract: A semiconductor device that includes a semiconductor substrate; a first capacitance section on the semiconductor substrate, the first capacitance section including a first electrode layer, a first dielectric layer, and a second electrode layer; a second capacitance section on the semiconductor substrate, the second capacitance section including a third electrode layer, a second dielectric layer, and a fourth electrode layer; a first external electrode; a second external electrode; a first lead wire led out from the first capacitance section to the first external electrode and having an inductance L1; and a second lead wire led out from the second capacitance section to the second external electrode and having an inductance L2, wherein an electrostatic capacity C1 of the first capacitance section and an electrostatic capacity C2 of the second capacitance section are different, and L1/L2=0.8 to 1.2.

    Dielectric thin film element, antifuse element, and method of producing dielectric thin film element
    5.
    发明授权
    Dielectric thin film element, antifuse element, and method of producing dielectric thin film element 有权
    电介质薄膜元件，反熔丝元件以及制造电介质薄膜元件的方法

    公开(公告)号：US09460859B2

    公开(公告)日：2016-10-04

    申请号：US13795677

    申请日：2013-03-12

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Toshiyuki Nakaiso ,  Yutaka Takeshima ,  Yutaka Ishiura ,  Yuji Irie ,  Shinsuke Tani ,  Jun Takagi

    IPC: H01G4/30 ,  H01G4/33 ,  H01L23/522 ,  H01L23/525 ,  H01L27/01

    CPC classification number: H01G4/33 ,  H01L23/5223 ,  H01L23/5252 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53261 ,  H01L27/016 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A dielectric thin film element having a high humidity resistance is provided. A dielectric thin film element includes a capacitance section having a dielectric layer and a pair of electrode layers formed on the respective upper and lower surfaces of the dielectric layer 22. Furthermore, a protection layer is provided on the capacitance section, a pair of interconnect layers are drawn out to an upper surface of the protection layer, and external electrodes are formed to be electrically connected to the interconnect layers. Further, first surface metal layers cover a portion of the interconnect layers that extends along the inner surface of the openings and second surface metal layers are formed at end of the first surface metal layers.

    Abstract translation: 提供了具有高耐湿性的电介质薄膜元件。 电介质薄膜元件包括具有电介质层的电容部分和形成在电介质层22的相应上表面和下表面上的一对电极层。此外，保护层设置在电容部分上，一对互连层 被拉出到保护层的上表面，并且外部电极形成为与互连层电连接。 此外，第一表面金属层覆盖沿着开口的内表面延伸的互连层的一部分，并且第二表面金属层形成在第一表面金属层的端部。

    Thin-Film Capacitor
    7.
    发明申请
    Thin-Film Capacitor 审中-公开
    薄膜电容器

    公开(公告)号：US20130088811A1

    公开(公告)日：2013-04-11

    申请号：US13685852

    申请日：2012-11-27

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Yutaka Takeshima ,  Masanobu Nomura ,  Takeshi Inao

    IPC: H01G4/228

    CPC classification number: H01G4/228 ,  H01G4/232 ,  H01G4/33 ,  H01L23/5223 ,  H01L24/11 ,  H01L27/016 ,  H01L28/40 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05099

    Abstract: A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.

    Abstract translation: 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11901401B2

    公开(公告)日：2024-02-13

    申请号：US17065931

    申请日：2020-10-08

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Koichi Nishita ,  Masaki Takeuchi ,  Yutaka Takeshima ,  Kazuhiro Inoue

    IPC: H01L23/66 ,  H01L23/498 ,  H01L23/00 ,  H01L23/522 ,  H01G4/38 ,  H01L49/02

    CPC classification number: H01L28/60 ,  H01G4/38 ,  H01L23/49838 ,  H01L23/5227 ,  H01L23/66 ,  H01L24/06 ,  H01L28/90 ,  H01L2224/023

    Abstract: A semiconductor device that includes a semiconductor substrate; a first capacitance section on the semiconductor substrate, the first capacitance section including a first electrode layer, a first dielectric layer, and a second electrode layer; a second capacitance section on the semiconductor substrate, the second capacitance section including a third electrode layer, a second dielectric layer, and a fourth electrode layer; a first external electrode; a second external electrode; a first lead wire led out from the first capacitance section to the first external electrode and having an inductance L1; and a second lead wire led out from the second capacitance section to the second external electrode and having an inductance L2, wherein an electrostatic capacity C1 of the first capacitance section and an electrostatic capacity C2 of the second capacitance section are different, and L1/L2=0.8 to 1.2.

    COMPOSITE ELECTRONIC COMPONENT
    10.
    发明申请
    COMPOSITE ELECTRONIC COMPONENT 审中-公开
    复合电子元件

    公开(公告)号：US20160322164A1

    公开(公告)日：2016-11-03

    申请号：US15209917

    申请日：2016-07-14

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Satoshi Shindo ,  Yutaka Takeshima

    IPC: H01G4/33 ,  H01L49/02 ,  H01L27/01 ,  H01L23/528 ,  H01L23/29

    CPC classification number: H01G4/33 ,  H01L23/293 ,  H01L23/49822 ,  H01L23/528 ,  H01L27/016 ,  H01L28/20 ,  H01L28/40 ,  H01L28/60 ,  H01L2224/13 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A composite electronic component that includes an insulation substrate having a principal surface; a thin-film capacitor on the principal surface of the insulation substrate; a laminated insulation protection layer covering the thin-film capacitor; a first extended wiring in the insulation protection layer and connected to the thin-film capacitor; a first resin layer on the insulation protection layer, first and second thin-film resistors in the first resin layer; a through-hole penetrating the first resin layer in a thickness direction thereof so as to expose the first extended wiring; a first rewiring in the first resin layer and connected to the first extended wiring through the through-hole; and a second resin layer on the first resin layer. The interior of the through-hole is filled with the second resin layer, and the through-hole does not overlap the thin-film capacitor.

    Abstract translation: 一种复合电子部件，包括：具有主面的绝缘基板; 绝缘基板的主表面上的薄膜电容器; 覆盖薄膜电容器的层压绝缘保护层; 绝缘保护层中的第一个延伸布线并连接到薄膜电容器; 绝缘保护层上的第一树脂层，第一树脂层中的第一和第二薄膜电阻器; 贯通所述第一树脂层的厚度方向的通孔，露出所述第一延伸布线; 在第一树脂层中重新布线并通过通孔连接到第一延伸布线; 和在第一树脂层上的第二树脂层。 通孔的内部填充有第二树脂层，并且通孔不与薄膜电容器重叠。

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