公开(公告)号：US20100269333A1

公开(公告)日：2010-10-28

申请号：US12766679

申请日：2010-04-23

申请人： Mutsumi MASUMOTO ,  Noboru NAKANISHI ,  Tomohiro OKAZAKI

发明人： Mutsumi MASUMOTO ,  Noboru NAKANISHI ,  Tomohiro OKAZAKI

IPC分类号： H05K3/30

CPC分类号： H05K3/328 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/111 ,  H05K2201/09418 ,  H05K2201/10674 ,  H05K2203/0285 ,  Y02P70/611 ,  Y10T29/4913 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The objective of this invention is to provide an ultrasonic flip-chip mounting method with little variance in the formed electrode joints between a semiconductor chip and a substrate. The ultrasonic method for mounting a flip chip of the present invention may include a step for forming several bump electrodes (106) on the main surface of one side of a semiconductor chip (100) and a step for respectively bringing several projecting electrodes (106) into contact with the corresponding conductor patterns (132) on a substrate and for applying ultrasonic vibration to the semiconductor chip, where the ultrasonic vibration direction is oriented in a direction oblique to the electrode patterns (132). In this way, an effective width for joining formation W1 is greater than the width of the conductor patterns W of the electrode patterns (132).

摘要翻译： 本发明的目的是提供一种在半导体芯片和基板之间的形成的电极接头中几乎没有差异的超声波倒装芯片安装方法。 用于安装本发明的倒装芯片的超声波方法可以包括在半导体芯片（100）的一侧的主表面上形成多个凸起电极（106）的步骤和分别带有几个突出电极（106）的步骤， 与基板上的相应的导体图案（132）接触并且用于对半导体芯片施加超声波振动，其中超声波振动方向在与电极图案（132）相反的方向上取向。 以这种方式，用于接合结构W1的有效宽度大于电极图案（132）的导体图案W的宽度。

公开(公告)号：US20100255641A1

公开(公告)日：2010-10-07

申请号：US12756053

申请日：2010-04-07

申请人： Noboru NAKANISHI ,  Kazunori HAYATA ,  Mutsumi MASUMOTO

发明人： Noboru NAKANISHI ,  Kazunori HAYATA ,  Mutsumi MASUMOTO

IPC分类号： H01L21/56

CPC分类号： H01L21/563 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75611 ,  H01L2224/7565 ,  H01L2224/81092 ,  H01L2224/81097 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/814 ,  H01L2224/8309 ,  H01L2224/83097 ,  H01L2224/83104 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/05552 ,  H01L2924/00012

摘要： The objective of this invention is to present a semiconductor device manufacturing method with which the formation of voids inside an underfill resin can be prevented using a simple configuration. The semiconductor device manufacturing method of the present invention involves a step in which multiple electrodes formed on one principal surface of each semiconductor chip 20 are flip-chip bonded to corresponding conductive areas formed on a substrate, a step (condition 1) in which liquid underfill resin 40 is supplied along the circumferences of semiconductor chips 20 mounted on the substrate in the atmospheric pressure so as to form air pocket 110 between each semiconductor chip 20 and substrate 30, a step (conditions 2, 3, 4) in which the substrate is transferred from the atmospheric pressure into a vacuum atmosphere in order to discharge the air from air pockets 110, and a step (conditions 5, 6, 7, 8) in which the substrate is transferred from the vacuum atmosphere into the atmospheric pressure in order to let underfill resin 40 advance deep in the semiconductor chips.

摘要翻译： 本发明的目的是提供一种半导体器件制造方法，利用该半导体器件制造方法，可以使用简单的构造来防止底部填充树脂内的空隙的形成。 本发明的半导体器件制造方法涉及将形成在各半导体芯片20的一个主面上的多个电极倒装贴合在形成于基板上的相应的导电区域的步骤，其中液体底部填充的步骤（条件1） 树脂40沿着大气压下安装在基板上的半导体芯片20的周边供给，以便在每个半导体芯片20和基板30之间形成气袋110，其中基板为 从空气压力转移到真空气氛中以从气穴110排出空气，以及将基板从真空气氛转移到大气压中的步骤（条件5,6,7,8），以便 让底部填充树脂40在半导体芯片中深入。