公开(公告)号：US09741864B2

公开(公告)日：2017-08-22

申请号：US14889919

申请日：2014-05-02

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/40 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

公开(公告)号：US09825180B2

公开(公告)日：2017-11-21

申请号：US15248567

申请日：2016-08-26

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa ,  Toyohiro Chikyo

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/40 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

公开(公告)号：US11486843B2

公开(公告)日：2022-11-01

申请号：US16640421

申请日：2018-08-23

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin Kawakita ,  Akihiko Ohi ,  Tomoko Ohki ,  Naoki Ikeda ,  Toshihide Nabatame ,  Toyohiro Chikyo

IPC: G01N27/04

Abstract: The present invention is to provide a small-sized dryness/wetness responsive sensor that detects a galvanic current with a high sensitivity as a principle of operation. According to one embodiment of the present invention, a dryness/wetness responsive sensor comprises a thin wire made of a first metal and a thin wire made of a second metal, the second metal is different from the first metal, the thin wire of the first metal and the thin wire of the second metal are disposed in juxtaposition with each other on an insulating substrate, and a surface state of a part between the thin wire of the first metal and the thin wire of the second metal is hydrophilic or hydrophobic.

公开(公告)号：US10290802B2

公开(公告)日：2019-05-14

申请号：US15536150

申请日：2016-01-13

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Tadaaki Nagao

IPC: H01L45/00 ,  H01L27/24 ,  H01L27/105 ,  C23C16/40 ,  H01L49/00

Abstract: The forming voltage of a variable resistance device used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film is sandwiched between a lower electrode and an upper electrode, an island-shaped/particulate region of amorphous aluminum oxide or aluminum oxycarbide is formed on the metal oxide film. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the variable resistance device, is formed from the beginning under the island-shaped or particulate aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.

公开(公告)号：US08759925B2

公开(公告)日：2014-06-24

申请号：US14046339

申请日：2013-10-04

Applicant: National Institute for Materials Science

Inventor： Naoto Umezawa ,  Toyohiro Chikyo ,  Toshihide Nabatame

IPC: H01L21/316

CPC classification number: H01L29/51 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

Abstract: To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconductor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Abstract translation: 提供一种减小界面层的厚度的方法，该方法包括：（a）通过半导体用作界面层的氧化膜在半导体层上形成第一金属的氧化物的膜; 和（b）在所述第一金属的氧化物的膜上形成第二金属的氧化物的膜，其中所述第二金属具有比所述第一金属更高的化合价。

公开(公告)号：US10267756B2

公开(公告)日：2019-04-23

申请号：US15327103

申请日：2015-07-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin Kawakita ,  Tadashi Shinohara ,  Toyohiro Chikyo ,  Toshihide Nabatame ,  Akihiko Ohi ,  Tomoko Ohki

IPC: G01N27/04 ,  G01N17/04 ,  G01N27/12 ,  G01N27/22 ,  G01N17/00

Abstract: A dryness/wetness responsive sensor having decreased size, and improved sensitivity and responsiveness. The present invention comprises a thin wire of a first metal and a thin wire of a second metal, which is different from the first metal, wherein the thin wires run in juxtaposition with each other on an insulating substrate, and wherein the spacing between the first thin wire and the second thin wire is in the range of 5 nm or more and less than 20 μm.

公开(公告)号：US20160365455A1

公开(公告)日：2016-12-15

申请号：US15248567

申请日：2016-08-26

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa ,  Toyohiro Chikyo

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

Abstract translation: 本发明提供一种薄膜晶体管及其制造方法，其中诸如漏极电流和阈值电压的晶体管特性得到改善。 本发明提供一种具有源电极（108），漏电极（109），半导体层（105），栅电极（103）和绝缘层（104）的薄膜晶体管。 其中，所述半导体层（105）含有复合金属氧化物，所述复合金属氧化物通过向第一金属氧化物中添加比所述第一金属氧化物的氧解离能大至少200kJ / mol的氧解离能的氧化物而得到， 的氧空位被控制; 并且绝缘层（104）设置有SiO 2层，高介电常数第一层和高电容率第二层，由此在SiO 2层和高介电常数层之间的边界处产生的偶极子用于控制 阈值电压。