Abstract:
Provided is an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, and related methods of manufacturing a semiconductor device, and semiconductor devices. Provided is an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 μm or more and 260 μm or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 μm or more and 200 μm or less.
Abstract:
A provided protective cover member is a protective cover member configured to be placed on a face of an object, the face having an opening. The protective cover member includes a laminate, and the laminate includes: a protective membrane having a shape configured to cover the opening when the member is placed on the face; and an adhesive agent layer. The adhesive agent layer includes a thermosetting adhesive layer including a thermosetting resin composition. The thermosetting resin composition has a storage modulus of 1×105 Pa or more at 130 to 170° C. The above protective cover member is suitable for reducing deformation thereof and/or peeling thereof from a placement face in a high-temperature treatment such as reflow soldering.
Abstract:
The present invention aims to provide an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, a method of manufacturing a semiconductor device using the same, and a semiconductor device obtained by the manufacturing method. This object is achieved by an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 μm or more and 260 μm or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 μm or more and 200 μm or less.