公开(公告)号：US09105754B2

公开(公告)日：2015-08-11

申请号：US13929612

申请日：2013-06-27

Applicant: NITTO DENKO CORPORATION

Inventor： Yuichiro Shishido ,  Sadahito Misumi ,  Kenji Onishi

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/03

CPC classification number: H01L24/85 ,  H01L23/3121 ,  H01L24/16 ,  H01L24/42 ,  H01L24/45 ,  H01L24/48 ,  H01L25/03 ,  H01L25/50 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20754 ,  H01L2924/00012

Abstract: Provided is an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, and related methods of manufacturing a semiconductor device, and semiconductor devices. Provided is an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 μm or more and 260 μm or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 μm or more and 200 μm or less.

Abstract translation: 提供了能够制造具有良好屈服比的高质量半导体器件的粘合膜以及半导体器件的制造方法以及半导体器件。 提供一种用于嵌入固定在被粘物上的第一半导体元件和固定与第一半导体元件不同的第二半导体元件到粘合体上的粘合膜，其中粘合膜的厚度T大于 第一半导体元件，被粘物和第一半导体元件通过引线接合连接，厚度T与厚度T1之间的差为40μm以上且260μm以下，或被粘附体和第一半导体元件通过 倒装芯片接合和厚度T与厚度T1之间的差为10μm以上且200μm以下。

公开(公告)号：US20140106106A1

公开(公告)日：2014-04-17

申请号：US14134544

申请日：2013-12-19

Applicant: NITTO DENKO CORPORATION

Inventor： Yuichiro Shishido ,  Takeshi Matsumura

IPC: H01L21/683

CPC classification number: H01L21/6836 ,  B32B7/02 ,  B32B7/12 ,  B32B27/20 ,  B32B27/281 ,  B32B27/36 ,  B32B27/365 ,  B32B2457/14 ,  C09J7/385 ,  C09J2203/326 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/85 ,  H01L2224/9205 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/1467 ,  Y10T428/1471 ,  Y10T428/24802 ,  Y10T428/24942 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00012

Abstract: The present invention provides a dicing film with a protecting film that enables to paste a dicing film to a semiconductor wafer without a shift in position while reducing a downtime. There is provided a dicing film with a protecting film in which a dicing film and a protecting film are laminated, wherein the difference between the transmittance of the protecting film and the transmittance of the dicing film with a protecting film at a portion of the dicing film where light for detecting a film transmits first is 20% or more in a wavelength of 600 to 700 nm.

Abstract translation: 本发明提供一种具有保护膜的切割膜，其能够将切割膜粘贴到半导体晶片而不会发生位置偏移，同时减少停机时间。 提供了一种具有保护膜的切割膜，其中层压有切割膜和保护膜，其中保护膜的透射率与切割膜部分之间的保护膜的切割膜的透射率之间的差异 其中首先检测膜的光在600〜700nm的波长下为20％以上。

公开(公告)号：US20140001654A1

公开(公告)日：2014-01-02

申请号：US13929612

申请日：2013-06-27

Applicant: NITTO DENKO CORPORATION

Inventor： Yuichiro Shishido ,  Sadahito Misumi ,  Kenji Onishi

IPC: H01L23/00

CPC classification number: H01L24/85 ,  H01L23/3121 ,  H01L24/16 ,  H01L24/42 ,  H01L24/45 ,  H01L24/48 ,  H01L25/03 ,  H01L25/50 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20754 ,  H01L2924/00012

Abstract: The present invention aims to provide an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, a method of manufacturing a semiconductor device using the same, and a semiconductor device obtained by the manufacturing method. This object is achieved by an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 μm or more and 260 μm or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 μm or more and 200 μm or less.

Abstract translation: 本发明旨在提供一种能够制造具有良好屈服比的高质量半导体器件的粘合膜，使用该粘合膜的半导体器件的制造方法以及通过该制造方法获得的半导体器件。 该目的通过一种用于嵌入固定到被粘物上的第一半导体元件和将与第一半导体元件不同的第二半导体元件固定到被粘物的粘合膜来实现，其中粘合剂膜的厚度T大于厚度 第一半导体元件的T1，被粘体和第一半导体元件通过引线接合连接，厚度T与厚度T1之间的差为40μm以上且260μm以下，或者被粘体和第一半导体元件 通过倒装芯片接合连接，厚度T与厚度T1之间的差为10μm以上且200μm以下。