摘要:
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.
摘要:
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.
摘要:
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.
摘要:
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.
摘要:
A clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the metallic layer, wherein the copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate has an intermediate layer on the surface of the copper layer to form the epitaxial thin film thereon. The intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.
摘要:
A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.
摘要:
A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.
摘要:
The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon has an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.
摘要:
Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.
摘要:
Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.