公开(公告)号：US20090053550A1

公开(公告)日：2009-02-26

申请号：US12175514

申请日：2008-07-18

Applicant: Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Shuichi Kubota

Inventor： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Shuichi Kubota

IPC: B32B3/30 ,  B05D3/02 ,  B05D1/18

CPC classification number: H01L39/2461 ,  B32B15/01 ,  C21D2201/05 ,  C21D2251/02 ,  C21D2251/04 ,  C23C30/00 ,  C25D5/12 ,  C25D5/34 ,  C25D5/50 ,  C30B25/18 ,  Y10S977/81 ,  Y10S977/832 ,  Y10T428/12396 ,  Y10T428/12472 ,  Y10T428/12736 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12958 ,  Y10T428/12986 ,  Y10T428/12993 ,  Y10T428/26 ,  Y10T428/265

Abstract: Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.

Abstract translation: 在用于外延薄膜生长的织构化衬底中提供了比常规衬底表面更好的取向度和平滑度。 本发明是用于外延膜形成的纹理化衬底，其包括由用于外延膜形成的织构化衬底的表面上的厚度为1至5000nm的金属薄膜制成的晶体取向改进层，其具有纹理化的金属层至少在 一个表面，其中纹理金属层表面中的取向度（Deltaphi和Deltaomega）与晶体取向改进层表面中的取向度（Deltaphi和Deltaomega）之间的差为0.1至3.0°。 此外，当与构成该织构化衬底晶体取向改善层的金属不同的另一种金属相当于30nm或更小的薄膜，然后进行热处理时，可以提高该表面的平滑度。 此时，基板表面的表面粗糙度变为20nm以下。

公开(公告)号：US07319195B2

公开(公告)日：2008-01-15

申请号：US10995333

申请日：2004-11-24

Applicant: Shuichi Kohayashi ,  Kazuyuki Uemura ,  Shigeo Nagaya ,  Naoji Kashima

Inventor： Shuichi Kohayashi ,  Kazuyuki Uemura ,  Shigeo Nagaya ,  Naoji Kashima

IPC: H01B12/00 ,  H01F6/00 ,  H01L39/00 ,  H01L39/24

CPC classification number: H01L39/02 ,  H01F6/065 ,  H01R4/68 ,  Y10S505/886 ,  Y10S505/887 ,  Y10T29/49014

Abstract: A composite conductor suitable as a connecting conductor that includes a superconductor and is capable of reducing the generation of Joule heat in a joint part between the system side and power-supply sides of a superconductor apparatus. A composite conductor 10 includes a superconductor 12 provided continuously in the flowing direction of the electric current, and a metal conductor 11 joined with the superconductor 12 and provided at least at a joint part with mating conductors 50, 60 to be joined, wherein the electric current is fed and received between the metal conductor 11 and the mating conductors 50, 60 by joining the metal conductor 11 and the mating conductors 50, 60, and wherein the superconductor 12 is arranged in the metal conductor 11 so as to be approximately parallel to the joint surface (joint interface) between the metal conductor 11 and the mating conductors 50,60.

Abstract translation: 一种适合作为连接导体的复合导体，其包括超导体并且能够减少在超导体装置的系统侧和电源侧之间的接合部分中产生焦耳热。 复合导体10包括在电流的流动方向上连续设置的超导体12和与超导体12连接并且至少与接合部分的配合导体50,60连接的金属导体11，其中电气 电流通过接合金属导体11和配合导体50,60而在金属导体11和配合导体50,60之间进给和接收，并且其中超导体12布置在金属导体11中，以便大致平行于 金属导体11和配合导体50,60之间的接合表面（接合界面）。

公开(公告)号：US06903039B2

公开(公告)日：2005-06-07

申请号：US10367713

申请日：2003-02-19

Applicant: Balagopal N. Nair ,  Yasunori Ando ,  Hisatomi Taguchi ,  Shigeo Nagaya ,  Kiyoshi Komura

Inventor： Balagopal N. Nair ,  Yasunori Ando ,  Hisatomi Taguchi ,  Shigeo Nagaya ,  Kiyoshi Komura

IPC: C04B38/00 ,  B01D71/02 ,  C01B3/50 ,  C01B21/068 ,  C04B35/589

CPC classification number: C04B38/0022 ,  B01D39/2093 ,  B01D67/0046 ,  B01D71/02 ,  B01D2323/08 ,  C01B3/503 ,  C01B2203/0227 ,  C01B2203/041 ,  C01B2203/0465 ,  C04B35/584 ,  C04B35/589 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/6267 ,  C04B35/6268 ,  C04B2111/00793 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3873 ,  C04B2235/465 ,  C04B2235/5409 ,  C04B2235/668 ,  C04B2235/94 ,  Y10T428/249969 ,  C04B38/0054 ,  C04B41/4582

Abstract: The present invention provides a method for making a microporous ceramic material and includes the steps of (a) preparing a starting material for firing comprising a nonoxide ceramic precursor containing silicon as an essential component; (b) heating the starting material for firing in an atmosphere containing at least 1 mol % of hydrogen so as to form microporous ceramic product; and (c) cooling the microporous ceramic product.

Abstract translation: 本发明提供一种制造微孔陶瓷材料的方法，包括以下步骤：（a）制备包含以硅为主要成分的非氧化物陶瓷前体的焙烧原料; （b）在含有至少1mol％氢气的气氛中加热焙烧原料以形成微孔陶瓷产品; 和（c）冷却微孔陶瓷产品。

公开(公告)号：US20150005175A1

公开(公告)日：2015-01-01

申请号：US14376325

申请日：2012-02-01

Applicant: Ryusuke Nakasaki ,  Akinobu Nakai ,  Tomonori Watanabe ,  Naoji Kashima ,  Shigeo Nagaya

Inventor： Ryusuke Nakasaki ,  Akinobu Nakai ,  Tomonori Watanabe ,  Naoji Kashima ,  Shigeo Nagaya

IPC: H01F6/06 ,  H01B12/06 ,  H01F41/04

CPC classification number: H01F6/06 ,  H01B12/06 ,  H01F41/048 ,  H01L39/143 ,  H01L39/2441 ,  H01L39/2461

Abstract: A method for manufacturing a superconducting wire material in which the superconducting current is not saturated even when a superconducting layer is made into a thick film, and a superconducting wire material. In the method a superconducting layer is formed on a metal substrate interposed by an intermediate layer, the method including heating the metal substrate up to the film-formation temperature of a superconducting film for forming the superconducting layer, forming a superconducting film having a film thickness of at least 10 nm and no more than 200 nm on the intermediate layer, and reducing the metal substrate temperature to a level below the film-formation temperature of the superconducting film, and the superconducting film-formation, including the heating, the film-formation, and the cooling, are performed a plurality of times.

Abstract translation: 一种超导线材的制造方法，其中即使超导层制成厚膜，超导电流也不饱和，以及超导线材。 在该方法中，在由中间层插入的金属基板上形成超导层，该方法包括将金属基板加热直到形成超导层的超导膜的成膜温度，形成具有膜厚度的超导膜 在中间层上为至少10nm且不大于200nm，并且将金属基板温度降低到低于超导膜的成膜温度的水平，并且包括加热膜的超导膜形成， 形成和冷却，进行多次。

公开(公告)号：US08147984B2

公开(公告)日：2012-04-03

申请号：US12101228

申请日：2008-04-11

Applicant: Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

Inventor： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

IPC: B32B15/04 ,  B32B15/18 ,  B32B37/00 ,  C22F1/10 ,  C09J5/02

CPC classification number: C30B29/02 ,  B32B15/01 ,  B32B15/015 ,  C21D8/1277 ,  C23C26/00 ,  H01F41/32 ,  H01L39/2454 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/31678

Abstract: The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.

Abstract translation: 本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。 根据本发明的用于在其上形成外延薄膜的复合纹理金属基底包括金属层和镍层，其结合到金属层的至少一个面上，其中镍层具有{100} <001> 倾斜角＆Dgr;＆phgr; 的晶轴满足＆Dgr＆amp;＆nlE; 7度，镍纯度为99.9％以上。 定向金属基板通过对纯度为99.9％以上的镍片进行冷加工，将其热处理以进行取向，并通过表面活性接合法将金属板与取向镍片接合来制造。

公开(公告)号：US07927715B2

公开(公告)日：2011-04-19

申请号：US12101348

申请日：2008-04-11

Applicant: Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

Inventor： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

IPC: B32B15/04 ,  B32B15/18 ,  B32B15/20 ,  B32B18/00

CPC classification number: H01L39/2454 ,  B32B15/015 ,  C21D8/12 ,  C21D8/1277 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12924

Abstract: A clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the metallic layer, wherein the copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate has an intermediate layer on the surface of the copper layer to form the epitaxial thin film thereon. The intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.

Abstract translation: 一种用于在其上形成外延薄膜的包覆纹理金属衬底，其包括金属层和与该金属层的至少一个表面接合的铜层，其中铜层具有{100} 偏角＆Dgr＆amp; 的晶轴满足＆Dgr＆amp;＆nlE; 6度。 包层纹理金属基板在铜层的表面上具有中间层，以在其上形成外延薄膜。 中间层优选包括至少一层选自镍，氧化镍，氧化锆，稀土氧化物，氧化镁，钛酸锶（STO），钛酸锶钡（SBTO），氮化钛， 银，钯，金，铱，钌，铑和铂。

公开(公告)号：US07442344B2

公开(公告)日：2008-10-28

申请号：US10494293

申请日：2002-11-07

Applicant: Takehiro Suzuki ,  Atsushi Fukaya ,  Hisatomi Taguchi ,  Shigeo Nagaya ,  Kiyoshi Komura ,  Syozo Watanabe

Inventor： Takehiro Suzuki ,  Atsushi Fukaya ,  Hisatomi Taguchi ,  Shigeo Nagaya ,  Kiyoshi Komura ,  Syozo Watanabe

IPC: B01J10/00 ,  B01J10/02 ,  B01J12/00 ,  B01J12/02 ,  B01J14/00 ,  B01J15/00 ,  B01J16/00 ,  B01D53/02 ,  B01D59/26 ,  B01D53/22 ,  B01D59/12 ,  C04B35/00 ,  C04B35/50 ,  C04B35/51

CPC classification number: C04B35/2641 ,  B01D53/228 ,  B01D71/024 ,  B01D2323/12 ,  B01J12/007 ,  B01J19/2415 ,  B01J19/2475 ,  B01J19/2485 ,  B01J19/249 ,  B01J2219/00135 ,  B32B18/00 ,  B32B2311/22 ,  B32B2315/02 ,  C01B3/386 ,  C01B13/0255 ,  C01B2203/0261 ,  C01B2203/1041 ,  C01B2203/1052 ,  C01B2203/1064 ,  C01B2203/1241 ,  C01B2203/1258 ,  C01B2210/0046 ,  C04B35/01 ,  C04B35/016 ,  C04B35/2675 ,  C04B35/2683 ,  C04B35/4504 ,  C04B35/462 ,  C04B35/47 ,  C04B35/50 ,  C04B35/6262 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3286 ,  C04B2235/768 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/34 ,  C04B2237/346 ,  C04B2237/405 ,  C04B2237/704

Abstract: It is an object of the present invention to provide a ceramic member with excellent balance between oxygen ion conductivity and endurance (resistance to cracking and the like), an oxygen ion permeation module and a chemical reactor such as an oxygen separator, using such a ceramic member. The ceramic member with oxygen ion conductivity in accordance with the present invention has a perovskite-type crystal structure and a composition represented by the general formula: (Ln1−xMx)(Ti1−yFey)O3 (where Ln represents at least one element selected from lanthanoids, and M represents at least one element selected from the group containing Sr, Ca, and Ba, 0

Abstract translation: 本发明的目的是提供一种氧离子传导性和耐久性（耐裂纹等），氧离子渗透模块和氧分离器等化学反应器之间的平衡优良的陶瓷构件，其使用这种陶瓷 会员。 根据本发明的具有氧离子传导性的陶瓷构件具有钙钛矿型晶体结构和由以下通式表示的组成：<？in-line-formula description =“In-line Formulas”end =“lead”？ （Ln 1-x M x x）（Ti 1-y Fe y）O 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>（其中Ln表示选自镧系元素中的至少一种元素，M表示选自含 Sr，Ca和Ba，0 = 1）。 通过使用这种陶瓷构件构成的氧离子渗透组件可以用作氧气分离器，氧化反应器（例如烃的部分氧化反应器）等的结构组分。

公开(公告)号：US07394024B2

公开(公告)日：2008-07-01

申请号：US10771381

申请日：2004-02-05

Applicant: Shuichi Kohayashi ,  Kazuyuki Uemura ,  Shigeo Nagaya ,  Naoji Kashima

Inventor： Shuichi Kohayashi ,  Kazuyuki Uemura ,  Shigeo Nagaya ,  Naoji Kashima

IPC: H01B12/00

CPC classification number: H01R4/68 ,  Y10T29/49014

Abstract: An oxide superconductor current lead in which generation of Joule heat at joint portions with a system side conductor and a power supply side conductor is reduced with use of an oxide superconductor with less heat penetration into a super conducting equipment system is provided. A columnar oxide superconductor molten bodies (interelectrode superconductor 260, in-electrode superconductors 280a and 280b) are produced, the in-electrode superconductor 280a and a left end portion of the interelectrode superconductor 260 are placed into a power supply side metallic electrode 210, and the in-electrode superconductor 280b and a right end portion of the interelectrode superconductor 260 are similarly placed in a system side metallic electrode 211, then degassed joining metal is used to join them to form an oxide superconductor current lead 201, a power supply side conductor 5 from a power supply is joined to the power supply side metallic electrode 210, and a system side conductor 202 from a superconducting system side is joined to the system side metallic electrode 211 with use of respective clamps 203a and 203b.

Abstract translation: 提供了一种氧化物超导体电流引线，其中使用具有较少热渗透到超导设备系统中的氧化物超导体来减小与系统侧导体和电源侧导体的接合部处的焦耳热的产生。 制造柱状氧化物超导体熔融体（电​​极间超导体260，电极内超导体280a，280b），将电极内超导体280a和电极间超导体260的左端部配置在电源侧金属电极 210，并且电极内超导体280b和电极间超导体260的右端部类似地放置在系统侧金属电极211中，然后使用脱气的接合金属来连接它们以形成氧化物超导体电流引线201， 来自电源的电源侧导体5接合到电源侧金属电极210，并且使用相应的夹具203a和203b将来自超导系统侧的系统侧导体202接合到系统侧金属电极211 。

公开(公告)号：US07018707B2

公开(公告)日：2006-03-28

申请号：US09797004

申请日：2001-03-02

Applicant: Shigekazu Mase ,  Shigeo Nagaya ,  Junichiro Tsubaki ,  Kiyoshi Komura

Inventor： Shigekazu Mase ,  Shigeo Nagaya ,  Junichiro Tsubaki ,  Kiyoshi Komura

IPC: B32B3/26 ,  B32B3/00 ,  B32B7/12 ,  B01D29/00 ,  B01D39/00

CPC classification number: B01D67/0083 ,  B01D39/2075 ,  B01D67/0046 ,  B01D69/12 ,  B01D71/02 ,  B01D2325/02 ,  Y10T428/249953 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249977 ,  Y10T428/249978 ,  Y10T428/249979 ,  Y10T428/249983 ,  Y10T428/249993

Abstract: A porous ceramic laminate has a porous silicon nitride substrate and a porous silicon nitride separation film supported thereon and having minute pores of sizes capable of Knudsen separation or molecular sieve by sintering a porous silicon nitride substrate supporting a formed layer containing polysilazane at 800° C. in a nitrogen atmosphere.

公开(公告)号：US20050227060A1

公开(公告)日：2005-10-13

申请号：US11139520

申请日：2005-05-31

Applicant: Shigekazu Mase ,  Shigeo Nagaya ,  Junichiro Tsubaki ,  Kiyoshi Komura

Inventor： Shigekazu Mase ,  Shigeo Nagaya ,  Junichiro Tsubaki ,  Kiyoshi Komura

IPC: B01D53/22 ,  B01D39/20 ,  B01D71/02 ,  C04B41/85 ,  B32B3/26 ,  B32B3/00 ,  B32B3/06

CPC classification number: B01D67/0083 ,  B01D39/2075 ,  B01D67/0046 ,  B01D69/12 ,  B01D71/02 ,  B01D2325/02 ,  Y10T428/249953 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249977 ,  Y10T428/249978 ,  Y10T428/249979 ,  Y10T428/249983 ,  Y10T428/249993

Abstract: A porous ceramic laminate has a porous silicon nitride substrate and a porous silicon nitride separation film supported thereon and having minute pores of sizes capable of Knudsen separation or molecular sieve by sintering a porous silicon nitride substrate supporting a formed layer containing polysilazane at 800° C. in a nitrogen atmosphere.

Abstract translation: 多孔陶瓷层叠体具有多孔氮化硅衬底和多孔氮化硅分离膜，并且在800℃下烧结支撑含有聚硅氮烷的成形层的多孔氮化硅衬底，并具有能够进行克努森分离的微小孔隙或分子筛。 在氮气气氛中。