公开(公告)号：US08460461B2

公开(公告)日：2013-06-11

申请号：US13586000

申请日：2012-08-15

申请人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

发明人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

IPC分类号： C30B33/00 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02

CPC分类号： B32B15/018 ,  B32B15/01 ,  B32B15/013 ,  C21D8/0278 ,  C21D8/1277 ,  C21D9/46 ,  C21D2201/05 ,  C21D2251/00 ,  C21D2251/02 ,  Y10T428/24612

摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.

摘要翻译： 本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。 本发明提供了一种用于在其上形成外延薄膜的包层纹理金属基底，其包括金属层和与金属层的至少一个表面结合的银层，其中银层具有{100} <001>立方体 晶轴的偏角Deltaphi满足Deltaphi @ 9度的纹理。 纹理化的金属基材可以通过将含有30〜200ppm氧的银片经受热加工和热处理的定向处理，并通过使用表面活化粘合工艺将金属片与取向的银片接合来制造 。

公开(公告)号：US08287643B2

公开(公告)日：2012-10-16

申请号：US12101385

申请日：2008-04-11

申请人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

发明人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

IPC分类号： C30B33/06 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02

CPC分类号： B32B15/018 ,  B32B15/01 ,  B32B15/013 ,  C21D8/0278 ,  C21D8/1277 ,  C21D9/46 ,  C21D2201/05 ,  C21D2251/00 ,  C21D2251/02 ,  Y10T428/24612

摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.

摘要翻译： 本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。 本发明提供了一种用于在其上形成外延薄膜的包层纹理金属基底，其包括金属层和与金属层的至少一个表面结合的银层，其中银层具有{100} <001>立方体 偏离角度的纹理＆Dgr＆amp; 的晶轴满足＆Dgr＆amp;＆nlE; 9度。 纹理化的金属基材可以通过将含有30〜200ppm氧的银片经受热加工和热处理的定向处理，并通过使用表面活化粘合工艺将金属片与取向的银片接合来制造 。

公开(公告)号：US20150005175A1

公开(公告)日：2015-01-01

申请号：US14376325

申请日：2012-02-01

申请人： Ryusuke Nakasaki ,  Akinobu Nakai ,  Tomonori Watanabe ,  Naoji Kashima ,  Shigeo Nagaya

发明人： Ryusuke Nakasaki ,  Akinobu Nakai ,  Tomonori Watanabe ,  Naoji Kashima ,  Shigeo Nagaya

IPC分类号： H01F6/06 ,  H01B12/06 ,  H01F41/04

CPC分类号： H01F6/06 ,  H01B12/06 ,  H01F41/048 ,  H01L39/143 ,  H01L39/2441 ,  H01L39/2461

摘要： A method for manufacturing a superconducting wire material in which the superconducting current is not saturated even when a superconducting layer is made into a thick film, and a superconducting wire material. In the method a superconducting layer is formed on a metal substrate interposed by an intermediate layer, the method including heating the metal substrate up to the film-formation temperature of a superconducting film for forming the superconducting layer, forming a superconducting film having a film thickness of at least 10 nm and no more than 200 nm on the intermediate layer, and reducing the metal substrate temperature to a level below the film-formation temperature of the superconducting film, and the superconducting film-formation, including the heating, the film-formation, and the cooling, are performed a plurality of times.

摘要翻译： 一种超导线材的制造方法，其中即使超导层制成厚膜，超导电流也不饱和，以及超导线材。 在该方法中，在由中间层插入的金属基板上形成超导层，该方法包括将金属基板加热直到形成超导层的超导膜的成膜温度，形成具有膜厚度的超导膜 在中间层上为至少10nm且不大于200nm，并且将金属基板温度降低到低于超导膜的成膜温度的水平，并且包括加热膜的超导膜形成， 形成和冷却，进行多次。

公开(公告)号：US08147984B2

公开(公告)日：2012-04-03

申请号：US12101228

申请日：2008-04-11

申请人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

发明人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

IPC分类号： B32B15/04 ,  B32B15/18 ,  B32B37/00 ,  C22F1/10 ,  C09J5/02

CPC分类号： C30B29/02 ,  B32B15/01 ,  B32B15/015 ,  C21D8/1277 ,  C23C26/00 ,  H01F41/32 ,  H01L39/2454 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/31678

摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.

摘要翻译： 本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。 根据本发明的用于在其上形成外延薄膜的复合纹理金属基底包括金属层和镍层，其结合到金属层的至少一个面上，其中镍层具有{100} <001> 倾斜角＆Dgr;＆phgr; 的晶轴满足＆Dgr＆amp;＆nlE; 7度，镍纯度为99.9％以上。 定向金属基板通过对纯度为99.9％以上的镍片进行冷加工，将其热处理以进行取向，并通过表面活性接合法将金属板与取向镍片接合来制造。

公开(公告)号：US07927715B2

公开(公告)日：2011-04-19

申请号：US12101348

申请日：2008-04-11

申请人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

发明人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Hirofumi Hoshino

IPC分类号： B32B15/04 ,  B32B15/18 ,  B32B15/20 ,  B32B18/00

CPC分类号： H01L39/2454 ,  B32B15/015 ,  C21D8/12 ,  C21D8/1277 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12924

摘要： A clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the metallic layer, wherein the copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate has an intermediate layer on the surface of the copper layer to form the epitaxial thin film thereon. The intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.

摘要翻译： 一种用于在其上形成外延薄膜的包覆纹理金属衬底，其包括金属层和与该金属层的至少一个表面接合的铜层，其中铜层具有{100} 偏角＆Dgr＆amp; 的晶轴满足＆Dgr＆amp;＆nlE; 6度。 包层纹理金属基板在铜层的表面上具有中间层，以在其上形成外延薄膜。 中间层优选包括至少一层选自镍，氧化镍，氧化锆，稀土氧化物，氧化镁，钛酸锶（STO），钛酸锶钡（SBTO），氮化钛， 银，钯，金，铱，钌，铑和铂。

公开(公告)号：US07394024B2

公开(公告)日：2008-07-01

申请号：US10771381

申请日：2004-02-05

申请人： Shuichi Kohayashi ,  Kazuyuki Uemura ,  Shigeo Nagaya ,  Naoji Kashima

发明人： Shuichi Kohayashi ,  Kazuyuki Uemura ,  Shigeo Nagaya ,  Naoji Kashima

IPC分类号： H01B12/00

CPC分类号： H01R4/68 ,  Y10T29/49014

摘要： An oxide superconductor current lead in which generation of Joule heat at joint portions with a system side conductor and a power supply side conductor is reduced with use of an oxide superconductor with less heat penetration into a super conducting equipment system is provided. A columnar oxide superconductor molten bodies (interelectrode superconductor 260, in-electrode superconductors 280a and 280b) are produced, the in-electrode superconductor 280a and a left end portion of the interelectrode superconductor 260 are placed into a power supply side metallic electrode 210, and the in-electrode superconductor 280b and a right end portion of the interelectrode superconductor 260 are similarly placed in a system side metallic electrode 211, then degassed joining metal is used to join them to form an oxide superconductor current lead 201, a power supply side conductor 5 from a power supply is joined to the power supply side metallic electrode 210, and a system side conductor 202 from a superconducting system side is joined to the system side metallic electrode 211 with use of respective clamps 203a and 203b.

摘要翻译： 提供了一种氧化物超导体电流引线，其中使用具有较少热渗透到超导设备系统中的氧化物超导体来减小与系统侧导体和电源侧导体的接合部处的焦耳热的产生。 制造柱状氧化物超导体熔融体（电​​极间超导体260，电极内超导体280a，280b），将电极内超导体280a和电极间超导体260的左端部配置在电源侧金属电极 210，并且电极内超导体280b和电极间超导体260的右端部类似地放置在系统侧金属电极211中，然后使用脱气的接合金属来连接它们以形成氧化物超导体电流引线201， 来自电源的电源侧导体5接合到电源侧金属电极210，并且使用相应的夹具203a和203b将来自超导系统侧的系统侧导体202接合到系统侧金属电极211 。

公开(公告)号：US20050079116A1

公开(公告)日：2005-04-14

申请号：US10768899

申请日：2004-01-30

申请人： Kazunori Onabe ,  Takashi Saito ,  Naoji Kashima ,  Shigeo Nagaya

发明人： Kazunori Onabe ,  Takashi Saito ,  Naoji Kashima ,  Shigeo Nagaya

IPC分类号： C23C12/00 ,  C23C16/40 ,  C23C16/54 ,  C23C26/00 ,  C23C28/04 ,  H01L39/24 ,  C01B33/12

CPC分类号： C23C28/322 ,  C23C12/00 ,  C23C16/408 ,  C23C16/545 ,  C23C26/00 ,  C23C28/321 ,  C23C28/325 ,  C23C28/345 ,  C23C28/3455 ,  H01L39/2438 ,  H01L39/2461 ,  Y10S428/93

摘要： The object of the present invention is to provide an oxide superconducting conductor having superior strength and superconductor characteristics, and its production method. In order to achieve the above object, the present invention provides an oxide superconducting conductor having an oxide superconductor layer obtained by a method in which a raw material gas of an oxide superconductor is chemically reacted on a base material for forming an oxide superconductor provided with an Ag layer having a rolling texture formed on at least one side of a base material containing Ag base material or other base metal, a diffusion layer in which Cu is diffused in Ag is formed on the surface layer of the oxide superconductor layer side of the above base material, and the above oxide superconductor layer is formed on the above diffusion layer; and, an oxide superconducting conductor comprising the sequential generation of a plurality of layers of oxide superconductor containing Cu by CVD on an Ag layer of a base material for forming an oxide superconducting conductor provided with an Ag layer having a rolling texture formed on at least one side of an Ag base material or other base metal, and among the above plurality of oxide superconductor layers, the Cu content of the oxide superconductor layer immediately above the base material is made to have a higher concentration than the Cu content of the other oxide superconductor layers.

摘要翻译： 本发明的目的是提供一种具有优异的强度和超导特性的氧化物超导体及其制造方法。 为了实现上述目的，本发明提供一种具有氧化物超导体层的氧化物超导体导体，该氧化物超导体层通过使氧化物超导体的原料气体在形成具有氧化物超导体的氧化物超导体的基材上发生化学反应的方法而获得， 在含有Ag基材或其他基体金属的基材的至少一面上形成有轧制结构的Ag层，在上述氧化物超导体层侧的表面层上形成有Cu扩散Ag的扩散层 在上述扩散层上形成上述氧化物超导体层， 以及氧化物超导导体，其包括在用于形成氧化物超导导体的基材的Ag层上通过CVD连续生成含有Cu的多层氧化物超导体，所述氧化物超导体具有形成在至少一个 Ag基材或其他贱金属的侧面，并且在上述多个氧化物超导体层中，将紧贴在基材上方的氧化物超导体层的Cu含量设定为高于其它氧化物超导体的Cu含量 层。

公开(公告)号：US20120312429A1

公开(公告)日：2012-12-13

申请号：US13586000

申请日：2012-08-15

申请人： NAOJI KASHIMA ,  SHIGEO NAGAYA ,  KUNIHIRO SHIMA ,  HIROFUMI HOSHINO

发明人： NAOJI KASHIMA ,  SHIGEO NAGAYA ,  KUNIHIRO SHIMA ,  HIROFUMI HOSHINO

IPC分类号： C22F1/14

CPC分类号： B32B15/018 ,  B32B15/01 ,  B32B15/013 ,  C21D8/0278 ,  C21D8/1277 ,  C21D9/46 ,  C21D2201/05 ,  C21D2251/00 ,  C21D2251/02 ,  Y10T428/24612

摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.

摘要翻译： 本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。 本发明提供了一种用于在其上形成外延薄膜的包层纹理金属基底，其包括金属层和与金属层的至少一个表面结合的银层，其中银层具有{100} <001>立方体 偏离角度的纹理＆Dgr＆amp; 的晶轴满足＆Dgr＆amp;＆nlE; 9度。 纹理化的金属基材可以通过将含有30〜200ppm氧的银片经受热加工和热处理的定向处理，并通过使用表面活化粘合工艺将金属片与取向的银片接合来制造 。

公开(公告)号：US08039119B2

公开(公告)日：2011-10-18

申请号：US12175514

申请日：2008-07-18

申请人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Shuichi Kubota

发明人： Naoji Kashima ,  Shigeo Nagaya ,  Kunihiro Shima ,  Shuichi Kubota

IPC分类号： B32B15/04 ,  B32B15/18 ,  B32B15/20 ,  B05D5/00 ,  B05D1/18 ,  C25D3/00

CPC分类号： H01L39/2461 ,  B32B15/01 ,  C21D2201/05 ,  C21D2251/02 ,  C21D2251/04 ,  C23C30/00 ,  C25D5/12 ,  C25D5/34 ,  C25D5/50 ,  C30B25/18 ,  Y10S977/81 ,  Y10S977/832 ,  Y10T428/12396 ,  Y10T428/12472 ,  Y10T428/12736 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12958 ,  Y10T428/12986 ,  Y10T428/12993 ,  Y10T428/26 ,  Y10T428/265

摘要： Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.

摘要翻译： 在用于外延薄膜生长的织构化衬底中提供了比常规衬底表面更好的取向度和平滑度。 本发明是用于外延膜形成的纹理化衬底，其包括由用于外延膜形成的织构化衬底的表面上的厚度为1至5000nm的金属薄膜制成的晶体取向改进层，其具有纹理化的金属层至少在 一个表面，其中晶体取向改进层表面中的纹理金属层表面中的取向度（＆Dgr;＆phgr;和＆Dgr;ω）与取向度（＆Dgr;＆phgr;和＆Dgr;ω）之间的差异为0.1至3.0° 。 此外，当与构成该织构化衬底晶体取向改善层的金属不同的另一种金属相当于30nm或更小的薄膜，然后进行热处理时，可以提高该表面的平滑度。 此时，基板表面的表面粗糙度变为20nm以下。

公开(公告)号：US20080305322A1

公开(公告)日：2008-12-11

申请号：US12131990

申请日：2008-06-03

申请人： TOSHIYA DOI ,  NAOJI KASHIMA ,  SHIGEO NAGAYA ,  KUNIHIRO SHIMA

发明人： TOSHIYA DOI ,  NAOJI KASHIMA ,  SHIGEO NAGAYA ,  KUNIHIRO SHIMA

IPC分类号： B32B15/04 ,  B32B17/10

CPC分类号： C30B25/18 ,  C30B29/16 ,  C30B29/22 ,  H01L39/2461 ,  Y10T428/263

摘要： Provided is a buffer layer of a textured substrate for forming an epitaxial film that permit the formation of an epitaxial film having a high texture. The present invention provides a buffer layer of a textured substrate for forming an epitaxial film that is provided between a base material and an epitaxial film formed on at least one surface of the base material, in which the buffer layer has a single layer structure or a multilayer structure of not less than two layers and a layer in contact with the substrate is formed from an indium tin oxide. This buffer layer can have a multilayer structure, and can be provided on the ITO layer, with at least one layer formed from nickel, nickel oxide, zirconium oxide, a rare earth oxide, magnesium oxide, strontium titanate (STO), strontium titanate-barium (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium, and platinum.

摘要翻译： 提供了用于形成允许形成具有高质感的外延膜的外延膜的纹理化衬底的缓冲层。 本发明提供一种用于形成外延膜的纹理化衬底的缓冲层，其设置在基材和形成在基材的至少一个表面上的外延膜之间，其中缓冲层具有单层结构或 由氧化铟锡形成不少于两层的多层结构和与衬底接触的层。 该缓冲层可以具有多层结构，并且可以在ITO层上提供至少一层由镍，氧化镍，氧化锆，稀土氧化物，氧化镁，钛酸锶（STO），钛酸锶 - 钡（SBTO），氮化钛，银，钯，金，铱，钌，铑和铂。