公开(公告)号：US4881235A

公开(公告)日：1989-11-14

申请号：US41410

申请日：1987-04-23

申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

IPC分类号： H01S5/227 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/309 ,  H01S5/3407 ,  Y10S372/704

摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。 理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

公开(公告)号：US4881238A

公开(公告)日：1989-11-14

申请号：US888073

申请日：1986-07-22

申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura

发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura

IPC分类号： H01S5/227 ,  H01S5/30 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3407

摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the p-conductivity type.

摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型覆层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的阻挡层的部分被放入p导电型。

公开(公告)号：US4752934A

公开(公告)日：1988-06-21

申请号：US898199

申请日：1986-08-20

申请人： Tadashi Fukuzawa ,  Naoki Chinone ,  Kazuhisa Uomi ,  Takashi Kajimura

发明人： Tadashi Fukuzawa ,  Naoki Chinone ,  Kazuhisa Uomi ,  Takashi Kajimura

IPC分类号： H01S5/00 ,  H01S3/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/20 ,  H01S5/0208 ,  H01S5/2059 ,  H01S5/3432

摘要： A semiconductor laser having such a structure that a laser structure including a laser active region of multi quantum well structure, cladding layers and a cap layer is formed on a substrate, is disclosed in which both end regions of the laser active region in the quantum well layer is converted into mixed crystal by impurity induced intermixing so that a multi quantum well active region is sandwiched between mixed crystal regions, and impurity diffused regions are formed between the surface of the crystal and the mixed crystal regions, to form a current path and to inject carriers into the multi quantum well region in a direction parallel to the laser active layer. Thus, the semiconductor laser can modulate laser oscillation at a very high frequency, and moreover is readily fabricated or integrated.

摘要翻译： 公开了一种半导体激光器，其具有在基板上形成包括多量子阱结构的激光有源区域，包层和盖层的激光结构的结构，其中量子阱中的激光有源区的两个端部区域 通过杂质诱导的混合将层转换为混晶，使得多量子阱有源区夹在混晶区之间，并且在晶体表面和混晶区之间形成杂质扩散区，形成电流路径， 在平行于激光有源层的方向上将载流子注入多量子阱区域。 因此，半导体激光器可以以非常高的频率调制激光振荡，并且还容易地制造或集成。

公开(公告)号：US4835578A

公开(公告)日：1989-05-30

申请号：US139791

申请日：1987-12-30

申请人： Tsukuru Ohtoshi ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Naoki Chinone

发明人： Tsukuru Ohtoshi ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Naoki Chinone

IPC分类号： H01L27/15 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/335 ,  H01L29/06 ,  H01L29/15 ,  H01L29/205 ,  H01L29/775 ,  H01L29/80 ,  H01S5/00 ,  H01S5/34

CPC分类号： H01L33/24 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/151 ,  H01L29/205 ,  H01L29/66469 ,  H01L29/775 ,  H01L33/06 ,  H01S5/341

摘要： A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on a semiconductor substrate; and a second superlattice layer that covers that exposed side walls of said first superlattice layer. A disordered region is formed in the vicinity of the first semiconductor layer of the second superlattice layer in order to realize quantum wires with the conventional manufacturing process. This makes it possible to easily fabricate a laser device, a light-emitting diode and a transistor having quantum wires to enhance their performance.

摘要翻译： 半导体器件包括由含有杂质的第一半导体层和含有低浓度杂质的第二半导体层构成的第一超晶格层，所述第一超晶格层形成在半导体衬底上; 以及覆盖所述第一超晶格层的暴露侧壁的第二超晶格层。 在第二超晶格层的第一半导体层附近形成无序区域，以通过常规制造工艺实现量子线。 这使得可以容易地制造激光器件，发光二极管和具有量子线的晶体管以增强它们的性能。

公开(公告)号：US4827483A

公开(公告)日：1989-05-02

申请号：US895386

申请日：1986-08-11

申请人： Tadashi Fukuzawa ,  Naoki Chinone ,  Shin'ichi Nakatsuka ,  Katsutoshi Saito ,  Takashi Kajimura ,  Yuuichi Ono

发明人： Tadashi Fukuzawa ,  Naoki Chinone ,  Shin'ichi Nakatsuka ,  Katsutoshi Saito ,  Takashi Kajimura ,  Yuuichi Ono

IPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S5/1064 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/3432

摘要： A semiconductor laser device including at least one of a laser active layer formed of a super lattice and an optical guide layer formed of another super lattice is disclosed in which part of at least one of the super lattices is converted into a mixed crystal by the impurity induced disordering based upon one of impurity diffusion and impurity ion implantation, to divide the super lattice into a first region formed of the mixed crystal and a second region having the super lattice structure, the width of the second region in directions perpendicular to the lengthwise direction of a laser cavity varies along the above lengthwise direction, and the width of a laser excitation region is smaller than the mean value of the width of the second region, to generate laser oscillation having a single transverse mode and a multi longitudinal mode. Thus, the semiconductor laser device emits a laser beam which is small in astigmatism and low in optical feedback noise.

摘要翻译： 公开了一种包括由超晶格形成的激光有源层和由另一超晶格形成的光导层中的至少一个的半导体激光器件，其中至少一个超晶格的部分通过杂质转化为混晶 基于杂质扩散和杂质离子注入之一引起的无序化，将超晶格分成由混晶构成的第一区域和具有超晶格结构的第二区域，第二区域的宽度与垂直于长度方向的方向 激光腔沿上述长度方向变化，并且激光激发区域的宽度小于第二区域的宽度的平均值，以产生具有单一横向模式和多纵向模式的激光振荡。 因此，半导体激光装置发射像散小且光反馈噪声低的激光束。

公开(公告)号：US4861130A

公开(公告)日：1989-08-29

申请号：US112494

申请日：1987-10-26

申请人： Toshio Katsuyama ,  Hiroyoshi Matsumura ,  Hiroaki Inoue ,  Tadashi Fukuzawa ,  Naoki Chinone

发明人： Toshio Katsuyama ,  Hiroyoshi Matsumura ,  Hiroaki Inoue ,  Tadashi Fukuzawa ,  Naoki Chinone

IPC分类号： G02F1/017 ,  G02F1/025 ,  G02F1/015

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/025

摘要： An optical device utilizes a polariton substance and utilizes the absorption wavelength band of excitonic polaritons. Further, an external stimulus such as electric field, magnetic field, stress, current or electromagnetic wave (light) is continuously or intermittently given to the polariton substance, thereby to modulate light which enters the optical device. Thus, a modulating operation of ultra-high speed is possible.

摘要翻译： 光学装置利用极化子物质并利用激子离子的吸收波长带。 此外，电场，磁场，应力，电流或电磁波（光）等外部刺激被连续或间歇地给予极化子物质，从而调制进入光学器件的光。 因此，超高速的调制动作成为可能。

公开(公告)号：US4775980A

公开(公告)日：1988-10-04

申请号：US759136

申请日：1985-07-26

申请人： Naoki Chinone ,  Shinji Tsuji ,  Yoshihisa Fujisaki ,  Yasutoshi Kashiwada ,  Motohisa Hirao ,  Hitoshi Nakamura ,  Akio Oishi ,  Kenji Hiruma ,  Tadashi Fukuzawa ,  Hiroyoshi Matumura

发明人： Naoki Chinone ,  Shinji Tsuji ,  Yoshihisa Fujisaki ,  Yasutoshi Kashiwada ,  Motohisa Hirao ,  Hitoshi Nakamura ,  Akio Oishi ,  Kenji Hiruma ,  Tadashi Fukuzawa ,  Hiroyoshi Matumura

IPC分类号： H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S3/08 ,  H01S3/19

CPC分类号： H01S5/18305 ,  H01S5/12 ,  H01S5/106 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/18308 ,  H01S5/2072

摘要： A distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different Bragg wavelengths, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation through variation of the refractive indexes of the regions nonuniformly around an average value.

摘要翻译： 一种配置有光栅的分布式反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。 光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。 激光装置可以通过使区域的折射率不均匀地围绕平均值变化来实现稳定的单纵模振荡。

公开(公告)号：US4748132A

公开(公告)日：1988-05-31

申请号：US941841

申请日：1986-12-15

申请人： Tadashi Fukuzawa ,  Akira Tonomura ,  Naoki Chinone

发明人： Tadashi Fukuzawa ,  Akira Tonomura ,  Naoki Chinone

IPC分类号： H01S5/00 ,  H01L21/027 ,  H01L21/266 ,  H01L29/12 ,  H01L29/772 ,  H01S5/34 ,  G03C5/00 ,  H01L21/203

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L21/0277 ,  H01L21/266 ,  H01L29/125 ,  H01L29/127 ,  H01L29/7722 ,  H01S5/341 ,  Y10S148/046 ,  Y10S148/072 ,  Y10S148/137 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/962

摘要： As a process for fabricating uniform patterns fine enough to produce a quantum size effect, the use of electron halography is proposed. Disclosed examples employing a process are methods of manufacturing a semiconductors laser whose threshold current is approximately 1 mA, and a permeable transistor and bistable device whose response rates are 100 GHz.

摘要翻译： 作为用于制造足够精细以产生量子尺寸效应的均匀图案的方法，提出了使用电子黑影。 使用该方法的公开实施例是制造阈值电流约为1mA的半导体激光器的方法，以及响应速率为100GHz的可渗透晶体管和双稳态器件。

公开(公告)号：US4783425A

公开(公告)日：1988-11-08

申请号：US924774

申请日：1986-10-30

申请人： Tadashi Fukuzawa ,  Yuichi Ono ,  Shinichi Nakatsuka ,  Takashi Kajimura

发明人： Tadashi Fukuzawa ,  Yuichi Ono ,  Shinichi Nakatsuka ,  Takashi Kajimura

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/323 ,  H01S5/34 ,  H01L21/205 ,  H01L21/225 ,  H01L21/265

CPC分类号： B82Y20/00 ,  H01L33/0062 ,  H01S5/2231 ,  H01S5/34 ,  H01S5/2081 ,  H01S5/32316

摘要： A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer.

摘要翻译： 如果通过在p-GaAlAs包层上作为电流限制层的n-GaAs层中的化学蚀刻形成条纹形式的沟槽，则p-GaAlAs包层暴露于空气中，凹槽为 形成为到达包层。 GaAlAs容易氧化，从而在其表面上形成不稳定的降解层。 为了解决现有技术的问题，在p-GaAlAs包层上形成作为覆盖层的未掺杂的GaAs层，形成n-GaAs层，进行蚀刻，使未掺杂的GaAs层为 简单暴露。 然后在MBE装置中加热未掺杂的GaAs层，同时用As分子束照射并进行热蚀刻。 因此，在真空中露出包覆层，在其上形成p-GaAlAs层。 然而，该方法不适于批量生产，因为热蚀刻不稳定，并且需要非常高真空度的MBE装置。 由于加热，晶体的质量也降低。 因此，本发明提供一种半导体激光器的制造工艺，其中由于在未掺杂的GaAs层中的诸如锌离子的杂质的扩散而导致的构成元素的相互扩散，覆盖层消失。

公开(公告)号：US20070137254A1

公开(公告)日：2007-06-21

申请号：US11679460

申请日：2007-02-27

申请人： Tadashi Fukuzawa ,  Masaki Hasegawa

发明人： Tadashi Fukuzawa ,  Masaki Hasegawa

IPC分类号： C03B37/022

CPC分类号： G02B6/30 ,  G02B6/125 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H05K1/0274 ,  H05K1/144

摘要： Provided is an optical transmission substrate including: a first substrate; an optical waveguide which has clad covering a core and a periphery of the core and extends on an upper surface of the first substrate; a second substrate provided parallel to the first substrate so that a lower surface thereof contacts an upper surface of the optical waveguide; a reflection surface which is provided on a cross section of the core at an end of the optical waveguide and reflects light, which travels through the core of the optical waveguide, toward the second substrate; and a light guide which is provided in the second substrate and guides the light, which is reflected toward the second substrate, toward an upper surface of the second substrate from a position closer to the core than an upper surface of the clad.

摘要翻译： 提供一种光传输基板，包括：第一基板; 光波导，其具有包覆芯和芯的周边并且在第一基板的上表面上延伸的光导体; 第二基板，其平行于第一基板设置，使得其下表面接触光波导的上表面; 在所述光波导的端部设置在所述芯的截面上并反射穿过所述光波导的芯的光朝向所述第二基板的反射面; 以及导光体，其设置在所述第二基板中，并且从所述包层的上表面的距离更靠近所述芯的位置将从所述第二基板反射的光导向所述第二基板的上表面。