公开(公告)号：US20120238774A1

公开(公告)日：2012-09-20

申请号：US13513132

申请日：2010-11-29

申请人： Naoyuki Hayashi ,  Yoshio Inagaki ,  Tasuku Satou ,  Kana Morohashi ,  Koji Takaku ,  Ryo Nishio

发明人： Naoyuki Hayashi ,  Yoshio Inagaki ,  Tasuku Satou ,  Kana Morohashi ,  Koji Takaku ,  Ryo Nishio

IPC分类号： C07C69/773

CPC分类号： H01B1/121 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0076 ,  H01L51/0085 ,  H01L51/5048 ,  H01L51/5088 ,  H05B33/22 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film.

摘要翻译： 本发明提供一种电荷输送膜，其通过使包含至少一种电荷输送剂的涂膜经受大气压等离子体处理而制备，其中电荷输送膜与与电荷输送膜接触的物质之间的电子转移被促进 并且在通过湿法成膜的情况下也抑制了掺入固化膜中的诸如电荷输送剂的低分子量组分的扩散和混合或结晶的性能劣化，并且显示出优异的电荷传输性 和稳定性; 生产效率高的生产方法; 以及配备有电荷输送膜的发光元件和光电转换元件，大气压等离子体处理优选是将使用等离子体发生装置产生并使用惰性气体输送的等离子体施加到涂膜的处理。

公开(公告)号：US09449732B2

公开(公告)日：2016-09-20

申请号：US13513132

申请日：2010-11-29

申请人： Naoyuki Hayashi ,  Yoshio Inagaki ,  Tasuku Satou ,  Kana Morohashi ,  Koji Takaku ,  Ryo Nishio

发明人： Naoyuki Hayashi ,  Yoshio Inagaki ,  Tasuku Satou ,  Kana Morohashi ,  Koji Takaku ,  Ryo Nishio

IPC分类号： H01B1/00 ,  H01L51/00 ,  B05D5/00 ,  H01B1/12 ,  H05B33/22 ,  H01L51/50

CPC分类号： H01B1/121 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0076 ,  H01L51/0085 ,  H01L51/5048 ,  H01L51/5088 ,  H05B33/22 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film.

摘要翻译： 本发明提供一种电荷输送膜，其通过使包含至少一种电荷输送剂的涂膜经受大气压等离子体处理而制备，其中电荷输送膜与与电荷输送膜接触的物质之间的电子转移被促进 并且在通过湿法成膜的情况下也抑制了掺入固化膜中的诸如电荷输送剂的低分子量组分的扩散和混合或结晶的性能劣化，并且显示出优异的电荷传输性 和稳定性; 生产效率高的生产方法; 以及配备有电荷输送膜的发光元件和光电转换元件，大气压等离子体处理优选是将使用等离子体发生装置产生并使用惰性气体输送的等离子体施加到涂膜的处理。

公开(公告)号：US08647876B2

公开(公告)日：2014-02-11

申请号：US13077226

申请日：2011-03-31

申请人： Tomoyuki Shimoda ,  Yoshio Inagaki ,  Kimiaki Miyamoto

发明人： Tomoyuki Shimoda ,  Yoshio Inagaki ,  Kimiaki Miyamoto

IPC分类号： G01N21/90 ,  G01N21/88 ,  G01N21/73 ,  G01N21/01 ,  G01N31/22

CPC分类号： G01N21/766 ,  Y10T436/20 ,  Y10T436/207497 ,  Y10T436/209163

摘要： An oxygen permeability measuring apparatus for measuring an oxygen permeation rate of oxygen barrier film in a dark room is provided. A container is charged with inert gas, and sealed hermetically by use of the oxygen barrier film at least partially. A chemiluminescent compound is contained in the container, for emitting light by oxidation with the oxygen. A photon detector detects photons emitted by the chemiluminescent compound so as to determine an amount of the oxygen permeated through the oxygen barrier film. Preferably, the container includes a container body. An opening is formed in the container body, and closed hermetically by the oxygen barrier film attached thereto. The photon detector is disposed inside or outside the container. The oxygen permeation rate is equal to or less than 10−2 cc/m2·day·atm. The chemiluminescent compound includes tetrakis(dimethylamino)ethylene.

摘要翻译： 提供了用于测量暗室中的氧阻隔膜的氧透过率的氧透过度测量装置。 在容器中装入惰性气体，并至少部分地使用氧气阻隔膜密封密封。 容器中含有化学发光化合物，用氧气氧化发光。 光子检测器检测由化学发光化合物发射的光子，以便确定透过氧隔离膜的氧的量。 优选地，容器包括容器主体。 在容器主体中形成开口，并且由附着在其上的氧阻隔膜气密闭合。 光子检测器设置在容器的内部或外部。 氧透过率等于或小于10-2cc / m2·天·大气压。 化学发光化合物包括四（二甲基氨基）乙烯。

公开(公告)号：US20120256182A1

公开(公告)日：2012-10-11

申请号：US13529550

申请日：2012-06-21

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment.

摘要翻译： 一种薄膜晶体管，其具有通过用光束照射非晶硅膜通过光热转换层和绝缘膜形成的晶体硅膜，以提供非晶硅膜的热处理。

公开(公告)号：US08110519B2

公开(公告)日：2012-02-07

申请号：US10590206

申请日：2005-03-07

申请人： Shu Kobayashi ,  Kuniaki Okamoto ,  Ryo Akiyama ,  Keiji Ohno ,  Yoshio Inagaki

发明人： Shu Kobayashi ,  Kuniaki Okamoto ,  Ryo Akiyama ,  Keiji Ohno ,  Yoshio Inagaki

IPC分类号： B01J31/06 ,  B01J31/00 ,  B01J31/16 ,  B01J31/22 ,  B01J23/40 ,  B01J23/42 ,  B01J23/44 ,  B01J23/46 ,  B01J23/52 ,  B01J23/75 ,  B01J23/755

CPC分类号： C07C67/31 ,  B01J31/069 ,  B01J31/165 ,  B01J2231/4261 ,  B01J2231/643 ,  B01J2531/824 ,  B01J2531/827 ,  B01J2531/828 ,  C07C17/14 ,  C07C45/68 ,  C07C49/796 ,  C07C67/343 ,  C08F212/08 ,  C08F212/14 ,  C07C22/04 ,  C07C69/732 ,  C07C69/618

摘要： The objective is to present compositions obtained by supporting by polymers micro clusters of transition metals and the like that are useful as catalysts in various reactions and, once used, are readily recovered and reused.A polymer-supported metal cluster composition is obtained by supporting a transition metal by a cross-linked polymer, and the polymer-supported cluster composition is characterized by the cross-linked polymer obtained by cross-linking of a cross-linkable polymer containing a hydrophilic side chain and a hydrophobic side chain group having a cross-linkable functional group. This polymer-supported metal cluster composition is, for example, preferably formed by first forming a micelle composed of the metal clusters supported by the cross-linkable polymer in a suitable solution and subsequently subjecting the cross-linkable polymer to a cross-linking reaction. The composition is useful as a catalyst and the like in hydrogenation reactions, dehydrogenation reactions, allylic substitution reactions, oxidation reactions, coupling reactions and carbonylation reactions.

摘要翻译： 目的是提供通过聚合物支撑的组合物，所述过渡金属等的微簇等可用作各种反应中的催化剂，并且一旦使用，就容易回收和重复使用。 聚合物负载的金属簇组合物通过用交联聚合物负载过渡金属而获得，聚合物负载的簇组合物的特征在于通过交联含有亲水性的交联聚合物而获得的交联聚合物 侧链和具有可交联官能团的疏水侧链基团。 该聚合物负载的金属簇组合物例如优选通过首先在合适的溶液中形成由可交联聚合物负载的金属簇构成的胶束，然后使可交联聚合物进行交联反应而形成。 该组合物可用作氢化反应，脱氢反应，烯丙基取代反应，氧化反应，偶联反应和羰基化反应中的催化剂等。

公开(公告)号：US07771915B2

公开(公告)日：2010-08-10

申请号：US10874344

申请日：2004-06-24

申请人： Masaharu Akiba ,  Takeharu Tani ,  Hiroo Takizawa ,  Yoshio Inagaki

发明人： Masaharu Akiba ,  Takeharu Tani ,  Hiroo Takizawa ,  Yoshio Inagaki

IPC分类号： G03C1/76

CPC分类号： G11B7/246 ,  B82Y10/00 ,  G11B7/245 ,  G11B7/2463 ,  G11B7/2472 ,  G11B7/2475 ,  G11B7/2478 ,  G11B7/248 ,  G11B7/2492 ,  G11B7/2495 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/2535 ,  G11B2007/24612

摘要： A two-photon absorbing optical recording material comprising at least one two-photon absorbing compound and a recording component is provided. Recording is made on it by utilizing the two-photon absorption of the two-photon absorbing compound in the material, and then the material is irradiated with light to thereby detect the difference in the reflectance between the recorded area and the unrecorded area thereof, and the recorded information is thereby reproduced from the material, and also provided are a photosensitive polymer composition and a photon-mode recording method for the material.

摘要翻译： 提供了包含至少一个双光子吸收化合物和记录组分的双光子吸收光学记录材料。 通过利用材料中的双光子吸收化合物的双光子吸收进行记录，然后用光照射材料，从而检测记录区域与未记录区域之间的反射率差异， 所记录的信息因此从材料中再现，并且还提供了用于该材料的光敏聚合物组合物和光子模式记录方法。

公开(公告)号：US20100159619A1

公开(公告)日：2010-06-24

申请号：US12600595

申请日：2008-04-30

申请人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

发明人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/30

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02683 ,  H01L27/1281 ,  H01L27/1285

摘要： A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.

摘要翻译： 在基板（1）上形成栅极绝缘膜（13）以覆盖栅电极（11），并且进一步形成非晶硅膜（半导体薄膜）（15）。 通过缓冲层（17）在其上形成光吸收层（19）。 能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层（19）。 这仅氧化光吸收层Lh的表面侧，并且产生通过使用在光吸收层（19）处的能量线Lh的热转换产生的热而使非晶硅膜（15）结晶而获得的美丽的晶体硅膜（15a） ）和氧化反应的热量。 这提供了一种以较简单的工艺以低成本使具有良好可控性的薄膜结晶的方法。

公开(公告)号：US20090095962A1

公开(公告)日：2009-04-16

申请号：US12247370

申请日：2008-10-08

申请人： Goh Matsunobu ,  Koichi Tatsuki ,  Yoshio Inagaki ,  Nobuhiko Umezu ,  Koichi Tsukihara

发明人： Goh Matsunobu ,  Koichi Tatsuki ,  Yoshio Inagaki ,  Nobuhiko Umezu ,  Koichi Tsukihara

IPC分类号： H01L33/00 ,  H01L21/00 ,  A61N5/00

CPC分类号： B23K26/032 ,  B23K26/0006 ,  B23K2103/172 ,  B23K2103/54 ,  B23K2103/56 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/3244 ,  H01L51/0005 ,  H01L2251/5315

摘要： A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过施加激光束来修改半导体膜; 以及在所述改性半导体膜上形成半导体器件。 在修改半导体膜的步骤中，激光束和衬底在与第一方向相反的第一方向和第二方向上相对于彼此移动，激光照射的区域之间的光学特性的变化 在第一和第二方向中的每一个中测量光束和在基板中不被激光束照射的区域或照射区域的光学特性，并且调制激光束的照射功率，使得测量 导致第一方向，并且在第二方向上的测量结果位于预定范围内。

公开(公告)号：US07488468B1

公开(公告)日：2009-02-10

申请号：US09787394

申请日：1999-09-16

申请人： Naoto Miwa ,  Michihito Inagaki ,  Hiroaki Eguchi ,  Masafumi Okumura ,  Yoshio Inagaki ,  Toru Harada

发明人： Naoto Miwa ,  Michihito Inagaki ,  Hiroaki Eguchi ,  Masafumi Okumura ,  Yoshio Inagaki ,  Toru Harada

IPC分类号： A61B5/00 ,  C09B23/08 ,  G01N33/53 ,  C07D291/00 ,  C07D231/06 ,  C09K11/06 ,  A01N43/38

CPC分类号： A61K49/0032 ,  C09B23/0008 ,  C09B23/0016 ,  C09B23/0025 ,  C09B23/0033 ,  C09B23/0041 ,  C09B23/0066 ,  C09B23/06 ,  C09B23/086 ,  Y10S436/80

摘要： A near infrared fluorescent contrast agent comprising a compound having three or more sulfonic acid groups in a molecule, and a method of fluorescence imaging comprising introducing the near infrared fluorescent contrast agent of the present invention into a living body, exposing the body to an excitation light, and detecting near infrared fluorescence from the contrast agent. The near infrared fluorescent contrast agent of the present invention is excited by an excitation light and emits near infrared fluorescence. This infrared fluorescence is superior in transmission through biological tissues. Thus, detection of lesions in the deep part of a living body has been made possible. In addition, the inventive contrast agent is superior in water solubility and low toxic, and therefore, it can be used safely.

摘要翻译： 一种分子内具有3个以上的磺酸基的化合物的近红外荧光造影剂，以及荧光成像方法，其特征在于，将本发明的近红外荧光造影剂引入生物体内，将其暴露于激发光 ，并从造影剂中检测近红外荧光。 本发明的近红外荧光造影剂被激发光激发并发射近红外荧光。 这种红外荧光在通过生物组织的传播方面是优越的。 因此，能够检测活体深部的病变。 此外，本发明的造影剂的水溶性和低毒性优异，因此可以安全使用。

公开(公告)号：US20080142800A1

公开(公告)日：2008-06-19

申请号：US11744299

申请日：2007-05-04

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.

摘要翻译： 提供一种能够抑制薄膜晶体管的特性变化而不劣化其特性的薄膜晶体管的制造方法。 通过光热转换层和缓冲层的间接热处理形成晶体硅膜。 通过图案化缓冲层和绝缘膜，在对应于晶体硅膜上的沟道区域的区域中选择性地形成沟道保护膜。 此外，当选择性地去除n +硅膜和金属层时，沟道保护膜用作蚀刻停止层。 当形成结晶硅膜时，均匀地供应热量。 此外，在蚀刻中，晶体硅膜的沟道区被保护。