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11 条记录 (耗时 0.032 秒)

    High resolution 3-D imaging range finder
    1.
    发明授权
    High resolution 3-D imaging range finder 有权
    高分辨率3-D成像测距仪

    公开(公告)号：US06535275B2

    公开(公告)日：2003-03-18

    申请号：US09772361

    申请日：2001-01-30

    申请人： Nathaniel Joseph McCaffrey ,  Robert James Andreas ,  Peter Alan Levine ,  Ramon Ubaldo Martinelli

    发明人： Nathaniel Joseph McCaffrey ,  Robert James Andreas ,  Peter Alan Levine ,  Ramon Ubaldo Martinelli

    IPC分类号： G01C308

    CPC分类号： G01S17/89 ,  G01S7/4873 ,  G01S17/105

    摘要： A three-dimensional imaging range finder is disclosed using a transmitted pulse reflected from a target. The range finder includes a pixel sensor for receiving light from the target and the reflected pulse. A global counter is provided for determining a time-of-flight value of the transmitted pulse by providing accurate count data to pixel memories. A processing circuit, which is coupled to the pixel sensor and the global counter, extracts the reflected pulse received by the pixel sensor, and stores the time-of-flight value upon extracting the reflected pulse. The pixel sensor provides a luminance signal and the processing circuit includes a high pass filter to extract the reflected pulse from the luminance signal.

    摘要翻译： 公开了使用从目标反射的发射脉冲的三维成像测距仪。 测距仪包括用于接收来自目标的光和反射脉冲的像素传感器。 提供了一个全局计数器，用于通过向像素存储器提供精确的计数数据来确定发射脉冲的飞行时间值。 耦合到像素传感器和全局计数器的处理电路提取由像素传感器接收的反射脉冲，并且在提取反射脉冲时存储飞行时间值。 像素传感器提供亮度信号，并且处理电路包括高通滤波器以从亮度信号中提取反射的脉冲。

    Infrared imager using room temperature capacitance sensor
    2.
    发明授权
    Infrared imager using room temperature capacitance sensor 有权
    红外成像仪使用室温电容传感器

    公开(公告)号：US06249001B1

    公开(公告)日：2001-06-19

    申请号：US09300986

    申请日：1999-04-08

    申请人： Donald Jon Sauer ,  Ramon Ubaldo Martinelli ,  Robert Amantea ,  Peter Alan Levine

    发明人： Donald Jon Sauer ,  Ramon Ubaldo Martinelli ,  Robert Amantea ,  Peter Alan Levine

    IPC分类号： G01J342

    CPC分类号： C07D405/06 ,  G01J5/34 ,  G01J5/40 ,  H04N5/33

    摘要： An infrared imager includes an array of capacitance sensors that operate at room temperature. Each infrared capacitance sensor includes a deflectable first plate which expands due to absorbed thermal radiation relative to a non-deflectable second plate. In one embodiment each infrared capacitance sensor is composed of a bi-material strip which changes the position of one plate of a sensing capacitor in response to temperature changes due to absorbed incident thermal radiation. The bi-material strip is composed of two materials with a large difference in thermal expansion coefficients.

    摘要翻译： 红外成像仪包括在室温下工作的电容式传感器阵列。 每个红外电容传感器包括可偏转的第一板，其由于相对于不可偏转的第二板的吸收的热辐射而膨胀。 在一个实施例中，每个红外线电容传感器由双材料条组成，双材料条响应于由吸收的入射热辐射引起的温度变化而改变感测电容器的一个板的位置。 双材料条由热膨胀系数差大的两种材料组成。

    Room temperature diode laser emitting in the 2-5 micrometer wavelength range
    6.
    发明授权
    Room temperature diode laser emitting in the 2-5 micrometer wavelength range 失效
    室温二极管激光器发射在2-5微米的波长范围内

    公开(公告)号：US5802090A

    公开(公告)日：1998-09-01

    申请号：US854988

    申请日：1997-05-13

    申请人： Pamela Kay York ,  Ramon Ubaldo Martinelli

    发明人： Pamela Kay York ,  Ramon Ubaldo Martinelli

    IPC分类号： H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/323 ,  H01S2302/00

    摘要： A semiconductor laser diode which emits radiation in the 2-5 micrometer wavelength range and operates at room temperature. The laser diode includes an active layer of an In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y alloy and a separate cladding layer on each side of the active layer. One of the cladding layers is of n-type conductivity and the other cladding layer is of p-type conductivity. At least the n-type cladding layer, and preferably both cladding layers, are of either an InAlPSb or an InGaPSb alloy.

    摘要翻译： 半导体激光二极管发射2-5微米波长范围的辐射并在室温下工作。 激光二极管包括In x Ga 1-x As y Sb 1-y合金的有源层和在有源层的每一侧上的单独包层。 其中一个包层为n型导电性，另一层为p型导电性。 至少n型包覆层，优选两个包层，都是InAlPSb或InGaPSb合金。

    Heterojunction thermophotovoltaic cell
    8.
    发明授权
    Heterojunction thermophotovoltaic cell 失效
    异质结热光伏电池

    公开(公告)号：US6133520A

    公开(公告)日：2000-10-17

    申请号：US190674

    申请日：1998-11-12

    申请人： Dmitri Zalmanovich Garbuzov ,  Victor Borisovich Khalfin ,  Ramon Ubaldo Martinelli ,  Hao Lee ,  Nancy Ann Morris ,  John Charles Connolly

    发明人： Dmitri Zalmanovich Garbuzov ,  Victor Borisovich Khalfin ,  Ramon Ubaldo Martinelli ,  Hao Lee ,  Nancy Ann Morris ,  John Charles Connolly

    IPC分类号： H01L31/0735 ,  H01L31/109

    CPC分类号： H01L31/0735 ,  Y02E10/544

    摘要： A thermophotovoltaic cell and diode photodetector having improved open circuit voltage and high internal efficiency includes a semiconductor body having regions of n-type conductivity and p-type conductivity adjacent each other to form a p-n junction therebetween. The p-type region is of a material having a band gap which will absorb black-body radiation and the n-type region is of a material having a wider band gap than that of the p-type region. This forms a heterojunction between the two regions. The region of n-type region has a doping level which is an order of magnitude less than the doping level in the p-type region. This structure forms a cell having a space charge region in the n-type region.

    摘要翻译： 具有改进的开路电压和高内部效率的热光伏电池和二极管光电检测器包括具有相邻的n型导电性和p型导电区域的半导体本体，以在它们之间形成p-n结。 p型区域是具有能够吸收黑体辐射的带隙的材料，并且n型区域是具有比p型区域更宽的带隙的材料。 这形成了两个区域之间的异质结。 n型区域的区域具有比p型区域中的掺杂水平小一个数量级的掺杂水平。 这种结构形成在n型区域中具有空间电荷区域的单元。