公开(公告)号：US5070591A

公开(公告)日：1991-12-10

申请号：US468250

申请日：1990-01-22

Applicant: Nathaniel R. Quick ,  James C. Kenney

Inventor： Nathaniel R. Quick ,  James C. Kenney

IPC: B22F1/00 ,  B22F1/02 ,  H05K1/09

CPC classification number: H05K1/092 ,  B22F1/0096 ,  B22F1/025 ,  B22F2009/041 ,  B22F2998/10 ,  Y10T29/49986

Abstract: Metal and ceramic particles of various morphologies are clad with a coating from the transition metal group consisting of silver, gold, copper, nickel, iron, cobalt, aluminum etc., or combinations thereof, to provide improved coated particles for microelectronics or metal matrix composites or other uses. Refractory metal precursor core particles, such as tungsten, molybdenum, niobium and zirconium, as examples, are provided from a composite of tungsten and copper, for example, made by pressurizing and infiltrating or liquid phase sintering of molten copper into a porous tungsten skeleton. Precursor chip particles derived from a tungsten impregnated billet are used as starter particles which may be further enhanced by cogrinding in an attritor ball mill with smaller copper particles to thereby produce an enhanced copper clad-coating of tungsten particles with predetermined percent by weight of copper and tungsten content. The resulting particles exhibit improved electrical and thermal expansion coefficient matching properties for use on microelectronic ceramic substrates and when used for metal matrix composition, provides more uniform distribution of the dispersed strengthening particulate phase in the matrix. In another embodiment, ceramic particles are clad-coated with selected metals so that they can be used in ceramic-metal matrices, thereby producing systems wherein the components are uniformily didpersed throughout the system.

Abstract translation: 各种形态的金属和陶瓷颗粒用来自由银，金，铜，镍，铁，钴，铝等组成的过渡金属组合的涂层或其组合包覆，以提供用于微电子学或金属基质复合材料的改进的涂层颗粒 或其他用途。 例如钨，钼，铌和锆等耐火金属前体核心颗粒由例如钨和铜的复合物提供，例如通过将熔融铜加压渗透或液相烧结成多孔钨骨架制成。 来自钨浸渍坯料的前体芯片颗粒被用作起始颗粒，其可以通过在具有较小铜颗粒的磨碎机球磨机中共研磨进一步增强，从而产生具有预定重量百分比的铜的钨颗粒的增强的铜包层， 钨含量。 所得到的颗粒表现出改善的用于微电子陶瓷衬底的电和热膨胀系数匹配性质，并且当用于金属基质组成时，分散的强化颗粒相在基体中的分布更均匀。 在另一个实施方案中，陶瓷颗粒用选定的金属包覆涂覆，使得它们可以用于陶瓷​​ - 金属基质中，由此产生其中组分在整个系统中均匀分散的系统。

公开(公告)号：US5184662A

公开(公告)日：1993-02-09

申请号：US740964

申请日：1991-08-06

Applicant: Nathaniel R. Quick ,  James C. Kenney

Inventor： Nathaniel R. Quick ,  James C. Kenney

IPC: B22F1/00 ,  B22F1/02 ,  H05K1/09

CPC classification number: H05K1/092 ,  B22F1/0096 ,  B22F1/025 ,  B22F2009/041 ,  B22F2998/10

Abstract: Metal and ceramic particles of various morphologies are clad with a coating from the transistion metal group consisting of silver, gold, copper, nickel, iron, cobalt, aluminum etc., or combinations thereof, to provide improved coated particles for microelectronics or metal matrix composites or other uses. Refractory metal precursor core particles, such as tungsten, molybdenum, niobium and zirconium, as examples, are provided from a composite of tungsten and copper, for example, made by pressurizing and infiltrating or liquid phase sintering of molten copper into a porous tungsten skeleton. Precursor chip particles derived from a tungsten impregnated billet are used as starter particles which may be further enhanced by cogrinding in an attritor ball mill with smaller copper particles to thereby produce an enhanced copper clad-coating of tungsten particles with predetermined percent by weight of copper and tungsten content. The resulting particles exhibit improved electrical and thermal expansion coefficient matching properties for use on microelectronic ceramic substrates and when used for metal matrix composites, provides more uniform distribution of the dispersed strengthening particulate phase in the matrix. In another embodiment, ceramic particles are clad-coated with selected metals so that they can be used in ceramic-metal matrices, thereby producing systems wherein the components are uniformly dispersed throughout the system.

Abstract translation: 各种形态的金属和陶瓷颗粒用来自由银，金，铜，镍，铁，钴，铝等组成的交换金属组合的涂层或其组合包覆，以提供用于微电子学或金属基质复合材料的改进的涂层颗粒 或其他用途。 例如钨，钼，铌和锆等耐火金属前体核心颗粒由例如钨和铜的复合物提供，例如通过将熔融铜加压渗透或液相烧结成多孔钨骨架制成。 来自钨浸渍坯料的前体芯片颗粒被用作起始颗粒，其可以通过在具有较小铜颗粒的磨碎机球磨机中共研磨进一步增强，从而产生具有预定重量百分比的铜的钨颗粒的增强的铜包层， 钨含量。 所得到的颗粒表现出改善的用于微电子陶瓷衬底的电和热膨胀系数匹配性质，并且当用于金属基质复合材料时，提供了分散的强化微粒相在基体中的更均匀分布。 在另一个实施方案中，陶瓷颗粒用选定的金属包覆涂覆，使得它们可以用于陶瓷​​ - 金属基质中，从而产生其中组分均匀分散在整个系统中的系统。

公开(公告)号：US09064798B2

公开(公告)日：2015-06-23

申请号：US13134091

申请日：2011-05-27

Applicant: Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

Inventor： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

IPC: H01L21/268 ,  H01L21/02 ,  G01J5/08 ,  G01J5/58 ,  G01K11/12

CPC classification number: H01L21/268 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/58 ,  G01K11/125 ,  H01L21/02678

Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

Abstract translation: 公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。 通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。 热能束限定光学装置的光学和物理性质。 光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性 可选电极 本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

公开(公告)号：US08114693B1

公开(公告)日：2012-02-14

申请号：US12284115

申请日：2008-09-18

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: H01L21/428

CPC classification number: H01L33/005 ,  H01L21/8213 ,  H01L21/8252 ,  H01L31/0312 ,  H01L31/03125 ,  H01L33/343

Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

Abstract translation: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

公开(公告)号：US20110272710A1

公开(公告)日：2011-11-10

申请号：US13135736

申请日：2011-07-14

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: H01L31/028 ,  H01L31/18 ,  H01L31/0304

CPC classification number: H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

Abstract translation: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

公开(公告)号：US20110056542A1

公开(公告)日：2011-03-10

申请号：US12592695

申请日：2009-12-01

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: H01L31/102 ,  F24J2/04 ,  H01L31/18

CPC classification number: H01L31/1876 ,  F24S10/755 ,  F24S50/40 ,  H01L21/4846 ,  H01L21/67115 ,  H01L31/02325 ,  H01L31/03042 ,  H01L31/03125 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/0547 ,  H01L31/068 ,  H01L31/0693 ,  H01L31/112 ,  H01L31/1812 ,  H01L31/184 ,  H02S40/44 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/60 ,  Y02P70/521

Abstract: A solid-state energy conversion device and method of making is disclosed wherein the solid-state energy conversion device is formed through the conversion of an insulating material. In one embodiment, the solid-state energy conversion device operates as a photovoltaic device to provide an output of electrical energy upon an input of electromagnetic radiation. In another embodiment, the solid-state energy conversion device operates as a light emitting device to provide an output of electromagnetic radiation upon an input of electrical energy. In one example, the photovoltaic device is combined with a solar liquid heater for heating a liquid. In another example, the photovoltaic device is combined with a solar liquid heater for treating water.

Abstract translation: 公开了一种固态能量转换装置及其制造方法，其中通过绝缘材料的转换形成固体能量转换装置。 在一个实施例中，固态能量转换装置用作光电装置，以在电磁辐射的输入上提供电能的输出。 在另一个实施例中，固态能量转换装置用作发光装置，以在电能输入上提供电磁辐射的输出。 在一个示例中，光伏器件与用于加热液体的太阳能液体加热器组合。 在另一个实例中，光伏器件与用于处理水的太阳能液体加热器组合。

公开(公告)号：US20100025694A1

公开(公告)日：2010-02-04

申请号：US12587399

申请日：2009-10-06

Applicant: Nathaniel R. Quick

Inventor： Nathaniel R. Quick

IPC: H01L29/12 ,  H01L21/263

CPC classification number: H01L21/02381 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02667 ,  H01L21/02689

Abstract: A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer of the non-wide bandgap material into a layer of a wide bandgap material. An improved component such as wide bandgap semiconductor device may be formed within the wide bandgap material through a further conversion process.

Abstract translation: 公开了一种在非宽带隙材料中形成宽带隙材料层的方法。 该方法包括提供非宽带隙材料的衬底并将非宽带隙材料的层转换成宽带隙材料的层。 可以通过进一步的转换过程在宽带隙材料内形成诸如宽带隙半导体器件的改进的部件。

公开(公告)号：US07268063B1

公开(公告)日：2007-09-11

申请号：US11141913

申请日：2005-06-01

Applicant: Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

Inventor： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

IPC: H01L21/20

CPC classification number: H01L21/02376 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02636

Abstract: A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

Abstract translation: 公开了一种用于原位制造嵌入衬底中的半导体组件的工艺。 用第一激光束烧蚀衬底以在其中形成空隙。 第一导电元件用第二激光束形成在衬底的空隙中。 在存在沉积气氛的情况下，第三激光束在第一导电元件上沉积半导体材料。 第二导电元件用第四激光束形成在第一半导体材料上。 该工艺可用于制造肖特基势垒二极管或结型场效应晶体管等。

公开(公告)号：US06939748B1

公开(公告)日：2005-09-06

申请号：US10684930

申请日：2003-10-13

Applicant: Nathaniel R. Quick

Inventor： Nathaniel R. Quick

IPC: H01L21/04 ,  H01L21/268 ,  H01L21/335

CPC classification number: B82Y10/00 ,  H01L21/0445 ,  H01L21/268 ,  Y10S435/931 ,  Y10S435/965

Abstract: A method is disclosed for making a nano-size semiconductor component within a wide-bandgap semiconductor substrate. A first thermal energy beam is directed onto a first portion of the wide-bandgap semiconductor substrate to change the structure of the wide-bandgap semiconductor substrate into a first element of the semiconductor component. A second thermal energy beam is directed onto a second portion of the wide-bandgap semiconductor substrate adjacent to the first portion to form a second element of the semiconductor component.

Abstract translation: 公开了一种在宽带隙半导体衬底内制造纳米尺寸半导体部件的方法。 第一热能束被引导到宽带隙半导体衬底的第一部分上，以将宽带隙半导体衬底的结构改变为半导体部件的第一元件。 第二热能束被引导到与第一部分相邻的宽带隙半导体衬底的第二部分上以形成半导体部件的第二元件。

公开(公告)号：US06437967B1

公开(公告)日：2002-08-20

申请号：US09834055

申请日：2001-04-12

Applicant: Nathaniel R. Quick ,  Clinton V. Kopp ,  Michael Liberman ,  Alexander Sobolevsky ,  Michael C. Murray

Inventor： Nathaniel R. Quick ,  Clinton V. Kopp ,  Michael Liberman ,  Alexander Sobolevsky ,  Michael C. Murray

IPC: H01G4228

CPC classification number: H01G4/28 ,  H01G4/385 ,  Y10T29/435

Abstract: An apparatus and process for making a capacitor comprising a first capacitor plate element covered with a spacing material selected for forming a capacitor dielectric. The first capacitor plate element and the spacing material is encased with a second capacitor element. The second capacitor plate element is drawn for reducing the outer diameter thereof. A multiplicity of the capacitor elements are inserted within a second capacitor plate connector. The second capacitor plate connector is drawn for reducing the outer diameter of the metallic tube and for electrically interconnecting the multiplicity of the second capacitor plate elements with the second capacitor plate connector to form a second capacitor plate. The multiplicity of the first capacitor elements are interconnected with a first capacitor plate connector to form a first capacitor plate. The spacing material is replaced with a dielectric material to form the capacitor thereby.

Abstract translation: 一种用于制造电容器的装置和方法，包括被选择用于形成电容器电介质的间隔材料覆盖的第一电容器板元件。 第一电容器板元件和间隔材料被第二电容器元件封装。 拉伸第二电容器板元件以减小其外径。 多个电容器元件插入第二电容器板连接器内。 第二电容器板连接器被拉伸以减小金属管的外径，并且用于将多个第二电容器板元件与第二电容器板连接器电连接以形成第二电容器板。 第一电容器元件的多重性与第一电容器板连接器互连以形成第一电容器板。 间隔材料被电介质材料代替以形成电容器。