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1.发明申请Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same 失效氮化铝和氧化铝/氮化铝异质结构栅极电介质堆叠的场效应晶体管及其形成方法公开(公告)号：US20050087821A1
公开(公告)日：2005-04-28
申请号：US10976068
申请日：2004-10-29
IPC分类号： H01L29/78 , H01L21/28 , H01L21/316 , H01L21/318 , H01L29/51 , H01L29/772
CPC分类号： H01L21/28202 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.
摘要翻译： 一种结构（例如场效应晶体管）和一种制造该结构的方法包括：具有源极区，漏极区和沟道区的衬底，设置在沟道区上方的绝缘层，绝缘层包括层 包括设置在沟道区域上的氮化铝，以及设置在绝缘层上的栅电极。
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公开(公告)号：US20050156257A1
公开(公告)日：2005-07-21
申请号：US11066762
申请日：2005-02-28
申请人： Nestor Bojarczuk , Kevin Chan , Christopher D'Emic , Evgeni Gousev , Supratik Guha , Paul Jamison , Lars-Ake Ragnarsson
发明人： Nestor Bojarczuk , Kevin Chan , Christopher D'Emic , Evgeni Gousev , Supratik Guha , Paul Jamison , Lars-Ake Ragnarsson
IPC分类号： H01L21/8238 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/513 , H01L21/28194
摘要： A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.
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3.发明申请Method of forming lattice-matched structure on silicon and structure formed thereby 有权在硅上形成晶格匹配结构的方法及由此形成的结构公开(公告)号：US20050095815A1
公开(公告)日：2005-05-05
申请号：US10998840
申请日：2004-11-30
IPC分类号： H01L21/316 , H01L21/30
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译： 形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。 混合的稀土氧化物与硅晶格匹配。
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公开(公告)号：US07488640B2
公开(公告)日：2009-02-10
申请号：US10976068
申请日：2004-10-29
IPC分类号： H01L21/8238
CPC分类号： H01L21/28202 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.
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5.发明授权Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same 有权氮化铝和氧化铝/氮化铝异质结构栅极电介质堆叠的场效应晶体管及其形成方法公开(公告)号：US06831339B2
公开(公告)日：2004-12-14
申请号：US09755164
申请日：2001-01-08
IPC分类号： H01L29772
CPC分类号： H01L21/28202 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.
摘要翻译： 一种结构（例如场效应晶体管）和一种制造该结构的方法包括：具有源极区，漏极区和沟道区的衬底，设置在沟道区上方的绝缘层，绝缘层包括层 包括设置在沟道区域上的氮化铝，以及设置在绝缘层上的栅电极。
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6.发明授权Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier 有权具有高介电常数栅极电介质和集成扩散势垒的互补金属氧化物半导体（CMOS）栅极叠层公开(公告)号：US07169674B2
公开(公告)日：2007-01-30
申请号：US11066762
申请日：2005-02-28
申请人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
IPC分类号： H01L21/8236 , H01L21/8222 , H01L21/335 , H01L21/8234 , H01L21/336 , H01L21/331
CPC分类号： H01L29/513 , H01L21/28194
摘要： A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.
摘要翻译： 用于具有沟道区和栅电极的场效应晶体管的扩散势垒（和形成扩散势垒的方法）包括设置在沟道区上的绝缘材料。 绝缘材料包括氮（N），并且设置在栅电极下方。 绝缘材料可以设置为层或分布在设置在栅电极下方的栅极电介质材料内。
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7.发明授权公开(公告)号：US07923743B2
公开(公告)日：2011-04-12
申请号：US12620629
申请日：2009-11-18
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译： 形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。 混合的稀土氧化物与硅晶格匹配。
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8.发明授权公开(公告)号：US07432550B2
公开(公告)日：2008-10-07
申请号：US10998840
申请日：2004-11-30
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/06 , H01L31/0328
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译： 形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。 混合的稀土氧化物与硅晶格匹配。
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9.发明申请公开(公告)号：US20100065815A1
公开(公告)日：2010-03-18
申请号：US12620629
申请日：2009-11-18
申请人： Nestor Alexander Bojarczuk, JR. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, JR. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译： 形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。 混合的稀土氧化物与硅晶格匹配。
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10.发明授权公开(公告)号：US07648864B2
公开(公告)日：2010-01-19
申请号：US12197079
申请日：2008-08-22
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/76 , H01L21/302
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译： 形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。 混合的稀土氧化物与硅晶格匹配。
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