公开(公告)号：US5624293A

公开(公告)日：1997-04-29

申请号：US470903

申请日：1995-06-06

Applicant: Babar A. Khan ,  David A. Cammack ,  Ronald D. Pinker ,  Nikhil R. Taskar

Inventor： Babar A. Khan ,  David A. Cammack ,  Ronald D. Pinker ,  Nikhil R. Taskar

IPC: H01J9/24 ,  G02F1/13357 ,  H01J9/00 ,  H01J9/26 ,  H01J9/28 ,  H01J17/49 ,  H01J61/00 ,  H01J61/30 ,  H01J61/36 ,  H01J61/82 ,  H01J65/00 ,  H01J65/04 ,  H01S3/03 ,  H01S3/097 ,  H01S3/0973 ,  H01S3/032

CPC classification number: G02F1/133617 ,  H01J17/492 ,  H01J61/00 ,  H01J61/30 ,  H01J61/82 ,  H01J65/00 ,  H01J9/00 ,  H01J9/261 ,  H01S3/03 ,  H01S3/097 ,  H01S3/0973

Abstract: A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Micro-lasers may also be fabricated by this technique as well.

Abstract translation: 一种高压气体放电灯及其利用集成电路制造技术的方法。 该灯由通过集成电路制造技术蚀刻空腔的耐热和耐压平面基板制造，以提供形成气体放电管的空腔。 电极沉积在腔中。 空腔填充有气体放电材料，例如汞蒸气，钠蒸气或金属卤化物。 将基板粘合在一起，并且可以在基板中蚀刻通道，以便提供连接到电极的装置。 也可以通过这种技术制造无电极RF激活灯。 也可以通过该技术来制造微型激光器。

公开(公告)号：US07259400B1

公开(公告)日：2007-08-21

申请号：US10842399

申请日：2004-05-10

Applicant: Nikhil R. Taskar

Inventor： Nikhil R. Taskar

IPC: H01L33/00

CPC classification number: H01L33/502 ,  H01L33/44 ,  H01L33/54

Abstract: A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent nanocomposite matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The phosphors dispersed in the matrix may be nanocrystalline, or larger sized with the addition of non light emitting, non light scattering nanoparticles dispersed within the matrix material so as to match the index of refraction of the matrix material to that of the phosphors. The nanocomposite matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes.

Abstract translation: 在LED的激发下由磷光体产生“白”光的光子结构。 光子结构安装LED和具有分散在其中的荧光体的光学透明纳米复合物基体，其将在LED的辐射的激发下发光。 分散在基质中的磷光体可以是纳米晶体，或者通过添加分散在基质材料内的非发光的非光散射纳米粒子的尺寸，以使基质材料的折射率与荧光体的折射率相匹配。 纳米复合材料基体材料可以容易地通过模塑形成并形成为包括用于聚焦发射光的透镜的各种形状。 大量的光子结构可以被布置在基板上以提供均匀的照明或其它目的。

公开(公告)号：US06674837B1

公开(公告)日：2004-01-06

申请号：US10172704

申请日：2002-06-14

Applicant: Nikhil R. Taskar ,  Rameshwar Nath Bhargava ,  Paul J. Patt

Inventor： Nikhil R. Taskar ,  Rameshwar Nath Bhargava ,  Paul J. Patt

IPC: H01J3500

CPC classification number: A61B6/542 ,  A61B6/00 ,  A61B6/4028 ,  A61B6/4216 ,  A61B6/482 ,  G01T1/2928 ,  H01J2235/068 ,  Y10S977/928

Abstract: An X-ray imaging system utilizing a pixelated X-ray source and a X-ray imaging detector operated synchronously. The imaging system may be used in industrial and medical applications. The X-ray source and X-ray detector are synchronized such that a corresponding area of the X-ray detector is activated when the corresponding area of the X-ray source is emitting X-rays. Synchronized and adaptive emission and detection of the X-rays results in scatter rejection, improved image quality, and optimum exposure and dose reduction.

Abstract translation: 使用像素化X射线源的X射线成像系统和同步运行的X射线成像检测器。 成像系统可用于工业和医疗应用。 X射线源和X射线检测器被同步，使得当X射线源的相应区域发射X射线时，X射线检测器的相应区域被激活。 X射线的同步和自适应发射和检测导致散射抑制，改善的图像质量以及最佳的曝光和剂量降低。

公开(公告)号：US5354708A

公开(公告)日：1994-10-11

申请号：US091634

申请日：1993-07-14

Applicant: Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

IPC: C30B29/48 ,  C23C16/18 ,  C30B25/02 ,  C30B25/10 ,  H01L21/205 ,  H01L21/365 ,  H01L21/20

CPC classification number: H01L21/02395 ,  C30B25/02 ,  C30B25/105 ,  C30B29/48 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/041 ,  Y10S148/064

Abstract: The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.

Abstract translation: 通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为 至少高于化合物在生长温度下的带隙能量。

公开(公告)号：US5990531A

公开(公告)日：1999-11-23

申请号：US968680

申请日：1997-11-12

Applicant: Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

Inventor： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

IPC: H01L29/20 ,  H01L21/285 ,  H01L21/335 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/76

CPC classification number: H01L29/518 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/1079 ,  H01L29/66462 ,  H01L29/78681 ,  H01L29/802 ,  H01L29/2003

Abstract: The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

Abstract translation: 本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。 通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。

公开(公告)号：US5547897A

公开(公告)日：1996-08-20

申请号：US259944

申请日：1994-06-15

Applicant: Nikhil R. Taskar ,  Dennis Gallagher ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Dennis Gallagher ,  Donald R. Dorman

IPC: C30B29/48 ,  C23C16/18 ,  C30B25/02 ,  C30B25/10 ,  H01L21/205 ,  H01L21/365 ,  H01L21/22

CPC classification number: C30B25/02 ,  C30B25/105 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/064

Abstract: The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.

Abstract translation: 通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为 在200-250nm的范围内。

公开(公告)号：US5399524A

公开(公告)日：1995-03-21

申请号：US133545

申请日：1993-10-07

Applicant: Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

IPC: H01L21/28 ,  H01L21/445 ,  H01L33/00 ,  H01L33/28 ,  H01L33/40 ,  H01L21/44 ,  H01L21/48

CPC classification number: H01L33/40 ,  H01L21/445 ,  H01L33/28

Abstract: A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.

Abstract translation: 在衬底上提供的p型ZnSe或ZnSSe层上提供改进的欧姆接触的方法，包括将该层浸入加热到超过200℃的Hg浴中超过2小时。

公开(公告)号：US20140008697A1

公开(公告)日：2014-01-09

申请号：US13991835

申请日：2011-12-06

Applicant: Brian R. Harkness ,  Ann W. Norris ,  Shellene K. Thurston ,  Vishal Chhabra ,  Bharati S. Kulkarni ,  Nikhil R. Taskar

Inventor： Brian R. Harkness ,  Ann W. Norris ,  Shellene K. Thurston ,  Vishal Chhabra ,  Bharati S. Kulkarni ,  Nikhil R. Taskar

IPC: H01L33/56

CPC classification number: H01L33/56 ,  C08G77/045 ,  C08G77/12 ,  C08G77/20 ,  C08L83/04 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A composition includes an organopolysiloxane component (A) comprising at least one of a disiloxane, a trisiloxane, and a tetrasiloxane, and has an average of at least two alkenyl groups per molecule. The composition further includes an organohydrogensiloxane component (B) having an average of at least two silicon-bonded hydrogen atoms per molecule. Components (A) and (B) each independently have at least one of an alkyl group and an aryl group and each independently have a number average molecular weight less than or equal to 1500 (g/mole). The composition yet further includes a catalytic amount of a hydrosilylation catalyst component (C), and titanium dioxide (TiO2) nanoparticles (D). The composition has a molar ratio of alkyl groups to aryl groups ranging from 1:0.25 to 1:3.0. A product of the present invention is the reaction product of the composition, which may be used to make a light emitting diode.

Abstract translation: 组合物包括包含二硅氧烷，三硅氧烷和四硅氧烷中的至少一种的有机聚硅氧烷组分（A），并且每分子平均具有至少两个烯基。 组合物还包括每分子平均具有至少两个硅键合的氢原子的有机氢硅氧烷组分（B）。 组分（A）和（B）各自独立地具有烷基和芳基中的至少一个，并且各自独立地具有小于或等于1500（g / mol）的数均分子量。 该组合物还包括催化量的氢化硅烷化催化剂组分（C）和二氧化钛（TiO 2）纳米颗粒（D）。 该组合物的烷基与芳基的摩尔比范围为1:0.25至1:3.0。 本发明的产品是可用于制造发光二极管的组合物的反应产物。

公开(公告)号：US06734465B1

公开(公告)日：2004-05-11

申请号：US10299410

申请日：2002-11-19

Applicant: Nikhil R. Taskar ,  Rameshwar Nath Bhargava

Inventor： Nikhil R. Taskar ,  Rameshwar Nath Bhargava

IPC: H01L2715

CPC classification number: H01L33/502 ,  H01L33/44 ,  H01L33/54

Abstract: A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The transparent matrix may include nanoparticles for matching the index of refraction of the material of the matrix to that of the light generating phosphors. The matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes. The phosphors dispersed in the matrix are preferably nanocrystalline.

Abstract translation: 在LED的激发下由磷光体产生“白”光的光子结构。 光子结构安装LED和其中分散有荧光体的光学透明矩阵，其将在LED的辐射的激发下发光。 透明矩阵可以包括纳米粒子，用于将矩阵材料的折射率与发光荧光体的折射率进行匹配。 基质材料可以容易地通过模塑形成并形成为包括用于聚焦发射光的透镜的各种形状。 大量的光子结构可以被布置在基板上以提供均匀的照明或其它目的。 分散在基质中的磷光体优选是纳米晶体。

公开(公告)号：US06534772B1

公开(公告)日：2003-03-18

申请号：US09688662

申请日：2000-10-16

Applicant: Vishal Chhabra ,  Rameshwar Nath Bhargava ,  Dennis Gallagher ,  Samuel P. Herko ,  Bharati S. Kulkarni ,  Nikhil R. Taskar ,  Aleksey Yekimov

Inventor： Vishal Chhabra ,  Rameshwar Nath Bhargava ,  Dennis Gallagher ,  Samuel P. Herko ,  Bharati S. Kulkarni ,  Nikhil R. Taskar ,  Aleksey Yekimov

IPC: G01T120

CPC classification number: G21K4/00 ,  G01T1/20 ,  G01T1/2921 ,  G21K2004/06 ,  G21K2004/12 ,  H01J2231/50036 ,  H01J2231/5016 ,  Y10S977/89

Abstract: A microchannel phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 40 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The dimensions of the microchannel and the phosphors and the relationship between the microchannels and the phosphors is optimized so that the light output compares favorably with lower resolution non microchannel based scintillation screens. A photomultiplier can be integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications.

Abstract translation: 用于将诸如X射线的辐射转换成可见光的微通道荧光屏。 屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了许多直径为40微米或更小的直径的紧密间隔的微通道。 沉积在每个微通道内的是在辐射作用时发光的多种荧光体。 微通道和磷光体的尺寸以及微通道和荧光体之间的关系被优化，使得光输出与较低分辨率的非微通道闪烁屏相比较。 光电倍增管可与X射线检测器集成，以提供增强的输出，用于电影或荧光透视应用的低电平X射线。