摘要:
A protective dust cover for a photomask or reticle useful for forming semiconductor integrated circuits, which is a transparent thin film cover to be disposed with a certain distance from the substrate surface of the photomask or reticle for the protection and dust proof of the substrate surface, said transparent thin film consisting essentially of a polyvinyl acetal of the formula: ##STR1## wherein R is a hydrogen atom, --CH.sub.3, --C.sub.2 H.sub.5 or --C.sub.n H.sub.m F.sub.2n-m+1 wherein n is an integer of from 1 to 8 and m is an integer of from 0 to 2n, x is a number of from 5 to 40, y is a number of from 0 to 10, z1 is a number of from 0 to 90/2, and z2 is a number of from 3/2 to 95/2, having a vinyl acetate content of at most 10 mol % and an acetal content of at least 60 mol %.
摘要翻译:用于形成半导体集成电路的光掩模或掩模版的保护防尘罩,其是与光掩模或掩模版的基板表面一定距离设置的透明薄膜盖,用于基板表面的防护和防尘, 所述透明薄膜基本上由下式的聚乙烯醇缩醛组成:其中R是氢原子,-CH 3,-C 2 H 5或-C n H m F 2n + m + 1,其中n是1至8的整数,和 m为0〜2n的整数,x为5〜40的数,y为0〜10的数,z1为0〜90/2的数,z2为3的数 / 2〜95/2,乙酸乙烯酯含量为10摩尔%以下,缩醛含量为60摩尔%以上。
摘要:
Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).
摘要:
An optical recording medium with a circular body including a substrate, a recording layer and a dielectric layer on the substrate, the circular body having a recording/reproducing area and a hub attached to a surface of the circular body. When the circular body stands vertically, the recording/reproducing area of the hub-attached surface is curved in a convex form, and the flexural amount is from 5 μm to 100 μm.
摘要:
For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
摘要:
Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.The present invention relates to a tantalum compound represented by the following formula (1) (In the formula, R1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), or a tantalum compound represented by the general formula (2) (In the formula, R2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6) (In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R3 to R6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like) as a raw material.
摘要:
An optical recording medium wherein a land and a groove are formed in both front and rear surfaces of a circular disk-like substrate respectively, at least a recording layer and a dielectric layer are formed on the surfaces of the substrate, and a hub is provided in only one of the surfaces and recording/reproducing are conducted by using a flying optical head, the optical recording medium being characterized in that in a state that the medium is supported by the hub so that the hub-attached surface directs downward, and in a region from the innermost periphery to L/3, where L is a distance from the innermost periphery to the outermost periphery of a recording/reproducing area, the center of curvature in a radial direction of that region exists at an opposite side with respect to the hub-attached surface of the optical recording medium, whereby the optical recording medium of high reliability wherein the distance between the flying optical head floating above the surface of the recording medium and the surface of the recording medium can be kept constant; uniform recording/reproducing signals can be obtained, and head crushing seldom occurs.
摘要:
A protective coating material comprising (meth)acrylate derivatives of the following formulas 1, 2, 3, 4 and 5 within the following ranges of a, b, c, d and e % by weight, respectively:5.ltoreq.a.ltoreq.80, 0.ltoreq.b.ltoreq.30, 0.ltoreq.c.ltoreq.30, 5.ltoreq.d.ltoreq.50,0.ltoreq.e.ltoreq.50, provided that a+b+c+d+e=100, ##STR1## wherein each of R.sub.1 to R.sub.3 is H or CH.sub.3, and R.sub.4 is CH.sub.2 CH.sub.3 or CH.sub.2 OH, ##STR2## wherein each of R.sub.5 to R.sub.8 is H or CH.sub.3, ##STR3## wherein each of R.sub.9 to R.sub.14 is H or CH.sub.3,CH.sub.2 .dbd.C(R.sub.15)COO(CH.sub.2).sub.n OCOC(R.sub.16).dbd.CH.sub.2 4wherein each of R.sub.15 and R.sub.16 is H or CH.sub.3, and n is an integer of from 2 to 10. ##STR4## wherein R17 is H or CH.sub.3.
摘要:
A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.
摘要翻译:本发明的主题是提供具有高蒸气压和高热稳定性的新型钛络合物,并且通过诸如CVD法或ALD法的技术制造含钛薄膜的优异材料,并进一步提供 用于制备这些络合物的方法,由络合物制备的含钛薄膜以及薄膜的制造方法。 本发明涉及制备由通式(1)表示的钛络合物:(其中R 1和R 4各自独立地表示具有1-16个碳原子的烷基; R 2和R 3各自独立地表示氢原子或具有1- 3个碳原子; R5表示具有1-16个碳原子并且可以被一个或多个氟原子取代的烷基),并使用该络合物制备含钛薄膜。
摘要:
This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.
摘要:
Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.