Device and method for color indentification

    公开(公告)号:US12104958B2

    公开(公告)日:2024-10-01

    申请号:US17777091

    申请日:2020-11-16

    CPC classification number: G01J3/462 G01J3/513 G01J2003/1213

    Abstract: Devices and methods of the present technology utilize wavelength-dependent transmittance of 2D materials to identify the wavelength of an electromagnetic radiation. A wide range of 2D materials can be used, making possible the use of the technology over a large portion of the electromagnetic spectrum, from gamma rays to the far infrared. When combined with appropriate algorithms and artificial intelligence, the technology can identify the wavelength of one or more monochromatic sources, or can identify color through the use of a training set. When applied in an array format, the technology can provide color imaging or spectral imaging using different regions of the electromagnetic spectrum.

    TUNABLE HETEROJUNCTION FOR MULTIFUNCTIONAL ELECTRONICS AND PHOTOVOLTAICS
    8.
    发明申请
    TUNABLE HETEROJUNCTION FOR MULTIFUNCTIONAL ELECTRONICS AND PHOTOVOLTAICS 审中-公开
    多功能电子学与光电子学应用

    公开(公告)号:US20150243826A1

    公开(公告)日:2015-08-27

    申请号:US14423636

    申请日:2013-08-27

    CPC classification number: H01L31/112 H01L31/028 H01L31/109 H01L31/1804

    Abstract: Provided in one embodiment is a method for operating a photodiode device, which device comprises: at least one layer of an n-doped semiconductor material; two portions of a dielectric material separately disposed over separate regions of the at least one layer of the n-doped semiconductor material; at least one monolayer of a carbon-based material disposed between the two portions of dielectric material and over the at least one layer of the n-doped semiconductor material; two terminal electrodes, each electrode disposed in electrical communication with a respective one of the portions of dielectric material; and a gate electrode in electrical communication with the at least one layer of the n-doped semiconductor material. The method comprises: applying a voltage across the gate electrode and one of the two terminal electrodes; and exposing the photodiode device to electromagnetic radiation.

    Abstract translation: 在一个实施例中提供了一种用于操作光电二极管器件的方法,该器件包括:至少一层n掺杂半导体材料; 介电材料的两部分分别设置在n掺杂半导体材料的至少一层的分离区域上; 设置在电介质材料的两个部分之间并且在n掺杂半导体材料的至少一个层上的碳基材料的至少一个单层; 两个端子电极,每个电极设置成与电介质材料的相应部分电连通; 以及栅电极,与n掺杂半导体材料的至少一层电连通。 该方法包括:在栅电极和两个端电极中的一个之间施加电压; 以及将所述光电二极管器件暴露于电磁辐射。

    Optoelectronic Devices Based on Heterojunctions of Single-Walled Carbon Nanotubes and Silicon
    9.
    发明申请
    Optoelectronic Devices Based on Heterojunctions of Single-Walled Carbon Nanotubes and Silicon 审中-公开
    基于单壁碳纳米管和硅的异质结的光电器件

    公开(公告)号:US20150228917A1

    公开(公告)日:2015-08-13

    申请号:US14428398

    申请日:2013-09-19

    Abstract: Heterojunctions of single-walled carbon nanotubes and p-doped silicon produce a photocurrent when irradiated with visible light under reverse bias conditions. In optoelectronic devices utilizing the heterojunctions, the output current can be controlled completely by both optical and electrical inputs. The heterojunctions provide a platform for heterogeneous optoelectronic logic elements with high voltage-switchable photocurrent, photo-voltage responsivity, electrical ON/OFF ratio, and optical ON/OFF ratio. The devices are combined to make switches, logic elements, and imaging sensors. An assembly of 250,000 sensor elements on a centimeter-scale wafer is also provided, with each sensor element having a heterojunction of single-walled carbon nanotubes and p-doped silicon, and producing a current dependent on both the optical and the electrical input.

    Abstract translation: 单壁碳纳米管和p掺杂硅的杂质在反向偏压条件下用可见光照射时产生光电流。 在利用异质结的光电器件中,输出电流可以通过光输入和电输入完全控制。 异质结为具有高电压切换光电流,光电压响应度,电开/关比和光ON / OFF比的异质光电逻辑元件提供了一个平台。 这些器件被组合以制造开关,逻辑元件和成像传感器。 还提供了在厘米级晶片上的25万个传感器元件的组件,每个传感器元件具有单壁碳纳米管和p掺杂硅的异质结,并产生取决于光学和电气输入的电流。

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