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公开(公告)号:US20180023209A1
公开(公告)日:2018-01-25
申请号:US15724120
申请日:2017-10-03
发明人: Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号: C25D7/12 , H01L21/321 , H01L21/67 , C25D5/00 , C25D21/04 , C25D3/12 , C25D21/12 , H01L21/288 , C25D5/02 , C25D5/12 , H01L21/768
CPC分类号: C25D7/123 , C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/003 , C25D5/022 , C25D5/12 , C25D5/56 , C25D17/001 , C25D21/04 , C25D21/12 , H01L21/02307 , H01L21/2885 , H01L21/321 , H01L21/67051 , H01L21/67138 , H01L21/76861 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L21/76898
摘要: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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公开(公告)号:US10301738B2
公开(公告)日:2019-05-28
申请号:US15724120
申请日:2017-10-03
发明人: Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号: C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/02 , C25D5/12 , C25D5/56 , C25D7/12 , C25D17/00 , C25D21/04 , C25D21/12 , H01L21/02 , H01L21/67 , H01L21/288 , H01L21/321 , H01L21/768
摘要: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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公开(公告)号:US10128102B2
公开(公告)日:2018-11-13
申请号:US15424198
申请日:2017-02-03
发明人: Lee Peng Chua , Bryan L. Buckalew , Thomas Anand Ponnuswamy , Brian Paul Blackman , Chad Michael Hosack , Steven T. Mayer
IPC分类号: B08B3/02 , H01L21/02 , H01L21/67 , H01L21/687
摘要: Disclosed are pre-wetting apparatus designs and methods for cleaning solid contaminants from substrates prior to through resist deposition of metal. In some embodiments, a pre-wetting apparatus includes a process chamber having a substrate holder, and at least one nozzle located directly above the wafer substrate and configured to deliver pre-wetting liquid (e.g., degassed deionized water) onto the substrate at a grazing angle of between about 5 and 45 degrees. In some embodiments the nozzle is a fan nozzle configured to deliver the liquid to the center of the substrate, such that the liquid first impacts the substrate in the vicinity of the center and then flows over the center of the substrate. In some embodiments the substrate is rotated unidirectionally or bidirectionally during pre-wetting with multiple accelerations and decelerations, which facilitate removal of contaminants.
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公开(公告)号:US09828688B2
公开(公告)日:2017-11-28
申请号:US15181150
申请日:2016-06-13
发明人: Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号: C25D7/12 , C25D5/02 , C25D5/12 , C25D5/56 , H01L21/67 , C25D3/12 , H01L21/768 , C25D5/00 , C25D21/12 , C25D3/30 , H01L21/321 , H01L21/288 , C25D21/04 , C25D17/00 , H01L21/02 , C25D3/38
CPC分类号: C25D7/123 , C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/003 , C25D5/022 , C25D5/12 , C25D5/56 , C25D17/001 , C25D21/04 , C25D21/12 , H01L21/02307 , H01L21/2885 , H01L21/321 , H01L21/67051 , H01L21/67138 , H01L21/76861 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L21/76898
摘要: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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公开(公告)号:US20170148627A1
公开(公告)日:2017-05-25
申请号:US15424198
申请日:2017-02-03
发明人: Lee Peng Chua , Bryan L. Buckalew , Thomas Anand Ponnuswamy , Brian Paul Blackman , Chad Michael Hosack , Steven T. Mayer
IPC分类号: H01L21/02 , H01L21/687 , B08B3/02 , H01L21/67
CPC分类号: H01L21/02052 , B08B3/024 , H01L21/67051 , H01L21/68764
摘要: Disclosed are pre-wetting apparatus designs and methods for cleaning solid contaminants from substrates prior to through resist deposition of metal. In some embodiments, a pre-wetting apparatus includes a process chamber having a substrate holder, and at least one nozzle located directly above the wafer substrate and configured to deliver pre-wetting liquid (e.g., degassed deionized water) onto the substrate at a grazing angle of between about 5 and 45 degrees. In some embodiments the nozzle is a fan nozzle configured to deliver the liquid to the center of the substrate, such that the liquid first impacts the substrate in the vicinity of the center and then flows over the center of the substrate. In some embodiments the substrate is rotated unidirectionally or bidirectionally during pre-wetting with multiple accelerations and decelerations, which facilitate removal of contaminants.
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公开(公告)号:US20160281255A1
公开(公告)日:2016-09-29
申请号:US15181150
申请日:2016-06-13
发明人: Bryan L. Buckalew , Steven T. Mayer , Thomas A. Ponnuswamy , Robert Rash , Brian Paul Blackman , Doug Higley
IPC分类号: C25D7/12 , H01L21/67 , H01L21/768 , C25D5/56 , C25D21/12 , C25D3/30 , C25D5/02 , C25D5/12 , C25D21/04 , H01L21/288 , C25D3/12
CPC分类号: C25D7/123 , C25D3/12 , C25D3/30 , C25D3/38 , C25D5/00 , C25D5/003 , C25D5/022 , C25D5/12 , C25D5/56 , C25D17/001 , C25D21/04 , C25D21/12 , H01L21/02307 , H01L21/2885 , H01L21/321 , H01L21/67051 , H01L21/67138 , H01L21/76861 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L21/76898
摘要: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.
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