-
公开(公告)号:US10073348B2
公开(公告)日:2018-09-11
申请号:US15241274
申请日:2016-08-19
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai , Seiichi Tagawa , Akihiro Oshima , Seiji Nagahara
IPC分类号: G03F7/004 , G03F7/20 , H01L21/027 , C07C309/07 , C07C381/12 , C08F220/38 , C07D409/14 , C07C303/32 , C08F220/22 , C08F220/28 , C08F220/26 , C08F220/14 , G03F7/039 , G03F7/32 , G03F7/38
CPC分类号: G03F7/203 , C07C303/32 , C07C309/07 , C07C381/12 , C07D409/14 , C08F220/14 , C08F220/22 , C08F220/26 , C08F220/28 , C08F220/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2002 , G03F7/2022 , G03F7/322 , G03F7/38 , H01L21/0274
摘要: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10−28 m3.
-
公开(公告)号:US10073349B2
公开(公告)日:2018-09-11
申请号:US15241345
申请日:2016-08-19
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai , Seiichi Tagawa , Akihiro Oshima , Seiji Nagahara
IPC分类号: G03F7/004 , G03F7/20 , C07C381/12 , C07C309/07 , C07C303/32 , C07D409/14 , C08F220/26 , C08F220/28 , C08F220/38 , C08F220/14 , C08F220/22 , C07D317/72 , C07D335/16 , C07D493/10 , G03F7/039 , G03F7/32 , G03F7/38 , C07C43/164 , C07C45/51 , C07C45/59 , C07D317/22
CPC分类号: G03F7/203 , C07C43/164 , C07C45/515 , C07C45/59 , C07C303/32 , C07C309/07 , C07C381/12 , C07D317/22 , C07D317/72 , C07D335/16 , C07D409/14 , C07D493/10 , C08F220/14 , C08F220/22 , C08F220/26 , C08F220/28 , C08F220/38 , G03F7/0045 , G03F7/0392 , G03F7/2002 , G03F7/2022 , G03F7/322 , G03F7/38 , C07C49/84
摘要: A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).
-
公开(公告)号:US09971247B2
公开(公告)日:2018-05-15
申请号:US15241315
申请日:2016-08-19
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai , Seiichi Tagawa , Akihiro Oshima , Seiji Nagahara
CPC分类号: G03F7/2022 , G03F7/0397 , G03F7/162 , G03F7/2032 , G03F7/30 , G03F7/322 , G03F7/38
摘要: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.
-
公开(公告)号:US11204552B2
公开(公告)日:2021-12-21
申请号:US15988436
申请日:2018-05-24
申请人: JSR CORPORATION
IPC分类号: G03F7/004 , G03F7/039 , G03F7/30 , G03F7/38 , C07C303/32 , C07C309/06 , C07C309/12 , C07C309/19 , C07C309/24 , C07C381/12 , G03F7/20
摘要: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a σ ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10−28 m3. [AxMR1y] (1)
-
5.
公开(公告)号:US20180267406A1
公开(公告)日:2018-09-20
申请号:US15988436
申请日:2018-05-24
申请人: JSR CORPORATION
CPC分类号: G03F7/0392 , G03F7/0045 , G03F7/0397 , G03F7/2059
摘要: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a σ ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10−28 m3. [AxMR1y] (1)
-
公开(公告)号:US09150962B2
公开(公告)日:2015-10-06
申请号:US14159444
申请日:2014-01-21
申请人: JSR Corporation
发明人: Tatsuya Sakai , Hideki Nishimura , Masahiro Yamamoto , Hisashi Nakagawa , Ryuuichi Saitou , Hideyuki Aoki , Tsuyoshi Furukawa
IPC分类号: C23C16/06 , H01L21/285 , H01L21/3205 , H01L21/768 , C23C16/18
CPC分类号: C23C16/06 , C23C16/18 , H01L21/28556 , H01L21/32051 , H01L21/76843 , H01L21/76877
摘要: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.
摘要翻译: 提供一种用金属体制造衬底的方法。 该方法提供优异的成膜性(反射率和粘合性),易于在大的基板上使用,并且可以以低成本进行。 该方法包括以下步骤:(A)将络合物加热至第一温度以产生复合物的蒸气; 和(B)使蒸气与加热到不高于第一温度的第二温度的基底接触,以形成含有复合体的中心金属的金属体,或者以未组合的形式或作为其化合物(不包括 该复合物)在基材的表面的至少一部分上。 步骤(B)中的第二温度低于络合物的分解温度。 复合体的中心金属是铝或钛。
-
公开(公告)号:US11506976B2
公开(公告)日:2022-11-22
申请号:US16778166
申请日:2020-01-31
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Yusuke Asano , Shinya Minegishi
摘要: A radiation-sensitive composition contains: a polymetalloxane including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. In the following formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar1 represents a substituted or unsubstituted aryl group having 6 to 20 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms; R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n is 2 or 3.
-
公开(公告)号:US10520815B2
公开(公告)日:2019-12-31
申请号:US15460503
申请日:2017-03-16
申请人: JSR CORPORATION
摘要: A pattern-forming method includes applying a radiation-sensitive composition on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The radiation-sensitive composition includes a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof. A content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.
-
公开(公告)号:US10120282B2
公开(公告)日:2018-11-06
申请号:US15259200
申请日:2016-09-08
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
IPC分类号: G03F7/004 , G03F7/38 , C08F220/24 , G03F7/039 , G03F7/20 , G03F7/32 , C08F220/38 , C08F228/02
摘要: A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.
-
公开(公告)号:US10018911B2
公开(公告)日:2018-07-10
申请号:US15347033
申请日:2016-11-09
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
IPC分类号: G03F7/004 , G03F7/16 , G03F7/039 , G03F7/20 , C07C381/12 , G03F7/38 , H01L21/027 , C07D307/77 , C08F220/38 , C08F220/18 , C08F220/26 , C08F220/24 , C08F220/22
CPC分类号: G03F7/0046 , C07C381/12 , C07D307/77 , C08F220/18 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , G03F7/0045 , G03F7/0397 , G03F7/095 , G03F7/168 , G03F7/2022 , G03F7/38 , H01L21/0274
摘要: A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.
-
-
-
-
-
-
-
-
-