公开(公告)号：US10854784B2

公开(公告)日：2020-12-01

申请号：US16331121

申请日：2017-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Brendan Holland ,  Jana Sommerfeld ,  Sabine vom Dorp

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/40

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

公开(公告)号：US20190229241A1

公开(公告)日：2019-07-25

申请号：US16331121

申请日：2017-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Brendan Holland ,  Jana Sommerfeld ,  Sabine vom Dorp

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

公开(公告)号：US20160093769A1

公开(公告)日：2016-03-31

申请号：US14891972

申请日：2014-06-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Sabine vom Dorp ,  Markus Maute

IPC: H01L33/24 ,  H01L33/62 ,  H01L27/15 ,  H01L33/56 ,  H01L33/60 ,  H01L33/00 ,  H01L33/54

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor chip includes a carrier substrate; a semiconductor body having a circumferential lateral surface, including a first and a second semiconductor region and, arranged there between, an active zone that generates radiation; and a connection structure including a first and a second conductive connection layer, separated from one another, wherein the first connection layer electrically connects to the first semiconductor region and the second connection layer via at least one plated-through hole electrically connects to the second semiconductor region, wherein the semiconductor body is surrounded by a passivation layer arranged on the lateral surface, and at least one further layer is arranged in a region surrounding the passivation layer.

Abstract translation: 光电子半导体芯片包括载体基板; 半导体本体，具有圆周侧表面，包括第一和第二半导体区域，并且布置在其间，产生辐射的有源区; 以及包括彼此分离的第一和第二导电连接层的连接结构，其中所述第一连接层经由至少一个电镀通孔电连接到所述第一半导体区域并且所述第二连接层电连接到所述第二半导体 区域，其中半导体主体被布置在侧表面上的钝化层包围，并且至少一个另外的层布置在围绕钝化层的区域中。

公开(公告)号：US10424565B2

公开(公告)日：2019-09-24

申请号：US15303436

申请日：2015-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Weimar ,  Frank Singer ,  Anna Kasprzak-Zablocka ,  Sabine vom Dorp

IPC: H01L25/16 ,  H01L33/48 ,  H01L33/62 ,  H01L23/60 ,  H01L23/48 ,  H01L27/02 ,  H01S5/068

Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

公开(公告)号：US20170033092A1

公开(公告)日：2017-02-02

申请号：US15303436

申请日：2015-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Weimar ,  Frank Singer ,  Anna Kasprzak-Zablocka ,  Sabine vom Dorp

IPC: H01L25/16 ,  H01L23/48 ,  H01L23/60

Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

Abstract translation: 公开了半导体芯片，包括半导体芯片的光电子器件和半导体芯片的制造方法。 在一个实施例中，芯片包括具有第一主表面和与第一主表面相对布置的第二主表面的半导体本体，其中半导体主体包括形成第一主表面的一部分的p掺杂子区域，以及 形成第二主表面的一部分的n掺杂子区域和从第一主表面延伸到第二主表面并且与一个子区域电隔离的金属接触元件。