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公开(公告)号：US20150228871A1
公开(公告)日：2015-08-13
申请号：US14424688
申请日：2013-08-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Stephan Haneder , Tomasz Swietlik , Christoph Walter , Andreas Rozynski , Markus Graul , Karsten Auen , Jürgen Dachs
CPC classification number: H01L33/60 , H01L33/005 , H01L33/48 , H01L33/62 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01S5/0201 , H01S5/0217 , H01S5/02252 , H01S5/02268 , H01S5/028
Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.
Abstract translation: 在制造激光二极管的方法中，在晶片上产生多个激光二极管。 将晶片分解为晶片，每个晶片片具有并排布置的多个激光二极管。 将一个晶片片插入到第一安装件中，该第一安装件包括与晶片片的前表面重叠的第一覆盖元件，并且遮蔽晶片的正面的底部区域。 次要层沉积在晶片前面的未遮蔽的上部区域上。 晶片片被插入到第二安装件中，该第二安装件包括遮挡前表面上部区域的次要层的第二覆盖元件。 导电接触层沉积在晶片的正面的未遮蔽的底部区域上。 随后将晶片分解成单独的激光二极管。
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公开(公告)号：US09705057B2
公开(公告)日：2017-07-11
申请号：US14424688
申请日：2013-08-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Stephan Haneder , Tomasz Swietlik , Christoph Walter , Andreas Rozynski , Markus Graul , Karsten Auen , Jürgen Dachs
CPC classification number: H01L33/60 , H01L33/005 , H01L33/48 , H01L33/62 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01S5/0201 , H01S5/0217 , H01S5/02252 , H01S5/02268 , H01S5/028
Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.
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公开(公告)号：US09537285B2
公开(公告)日：2017-01-03
申请号：US14787680
申请日：2014-04-25
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Markus Horn , Andreas Rozynski , Karsten Auen , Stephan Haneder , Thomas Dobbertin
CPC classification number: H01S5/02292 , H01S5/02212 , H01S5/0222 , H01S5/02236 , H01S5/02248 , H01S5/02476 , H01S5/32341 , H01S5/4025 , H01S5/4087
Abstract: Laser diode apparatus, comprising a carrier (1) having a carrier top (11), a laser diode chip (4) arranged on the carrier top (11) emitting, during operation, electromagnetic radiation through a radiating face (5), which radiating face (5) runs perpendicularly to the carrier top (11), and at least one optical element (6) to deflect at least some of the electromagnetic radiation radiated by the laser diode chip (4) perpendicularly to the carrier top (11). By the use of a plurality of laser diode chips having wavelengths that differ very slightly from one another, speckles can be reduced. By means of a retarder plate (8) between the laser diode chip and the optical element it is possible to influence the polarization. A polarization cube enables the deflected light beam bundles to fully cover one another as differently polarized light beam bundles.
Abstract translation: 激光二极管装置，包括具有载体顶部（11）的载体（1），布置在载体顶部（11）上的激光二极管芯片（4），在操作期间通过辐射面（5）发射电磁辐射，辐射面 面（5）垂直于载体顶部（11）延伸，并且至少一个光学元件（6）使由激光二极管芯片（4）辐射的至少一些电磁辐射垂直于载体顶部（11）偏转。 通过使用具有彼此非常微小的波长的多个激光二极管芯片，可以减少斑点。 通过激光二极管芯片和光学元件之间的延迟板（8），可以影响极化。 偏振立方体使得偏转的光束束能够作为不同偏振的光束束彼此完全相互覆盖。
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4.发明授权Method of producing a semiconductor laser element, and semiconductor laser element 有权半导体激光元件的制造方法以及半导体激光元件公开(公告)号：US09450376B2
公开(公告)日：2016-09-20
申请号：US14420411
申请日：2013-08-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Stephan Haneder , Markus Arzberger , Christoph Walter , Tomasz Swietlik , Harald König , Robin Fehse , Mathias Kämpf , Markus Graul , Markus Horn
CPC classification number: H01S5/0201 , H01S5/0202 , H01S5/02268 , H01S5/02272 , H01S5/02276
Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).
Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。
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5.发明申请METHOD OF PRODUCING A SEMICONDUCTOR LASER ELEMENT, AND SEMICONDUCTOR LASER ELEMENT 有权制造半导体激光元件的方法和半导体激光元件公开(公告)号：US20150207293A1
公开(公告)日：2015-07-23
申请号：US14420411
申请日：2013-08-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Stephan Haneder , Markus Arzberger , Christoph Walter , Tomasz Swietlik , Harald König , Robin Fehse , Mathias Kämpf , Markus Graul , Markus Horn
CPC classification number: H01S5/0201 , H01S5/0202 , H01S5/02268 , H01S5/02272 , H01S5/02276
Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).
Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。
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