中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.017 seconds)

    SEMICONDUCTOR LASER LIGHT SOURCE HAVING AN EDGE-EMITTING SEMICONDUCTOR BODY
    2.
    发明申请
    SEMICONDUCTOR LASER LIGHT SOURCE HAVING AN EDGE-EMITTING SEMICONDUCTOR BODY 有权
    具有边缘发光半导体体的半导体激光光源

    公开(公告)号：US20150085889A1

    公开(公告)日：2015-03-26

    申请号：US14396729

    申请日：2013-04-19

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christoph Eichler ,  Andreas Breidenassel ,  Alfred Lell

    IPC: H01S5/10

    CPC classification number: H01S5/1003 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0264 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/1237 ,  H01S5/2063 ,  H01S5/22 ,  H01S2301/166

    Abstract: A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).

    Abstract translation: 提供了包括边缘发射半导体本体（10）的半导体激光源。 半导体本体（10）包含具有n型层（111），有源层（112）和p型层（113）的半导体层堆叠（110），其形成用于产生电磁辐射，该电磁辐射包括相干 部分（21）。 半导体激光源被形成用于使电磁辐射的相干部分（21）与半导体本体（10）的相对于有源层（112）倾斜的去耦表面（101）去耦合。 半导体本体（10）包括相对于去耦表面（101）倾斜的另外的外表面（102A，102B，102C），并具有至少一个光扩散子区域（12,12A，12B，12C， 120A，120B），其被设置为将半导体层堆叠（110）产生的电磁辐射的一部分朝向另一外表面（102A，102B，102C）的方向引导。

    Semiconductor laser light source having an edge-emitting semiconductor body
    3.
    发明授权
    Semiconductor laser light source having an edge-emitting semiconductor body 有权
    具有边缘发射半导体本体的半导体激光光源

    公开(公告)号：US09214785B2

    公开(公告)日：2015-12-15

    申请号：US14396729

    申请日：2013-04-19

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christoph Eichler ,  Andreas Breidenassel ,  Alfred Lell

    IPC: H01S5/00 ,  H01S5/10 ,  H01S5/02 ,  H01S5/026 ,  H01S5/028 ,  H01S5/12 ,  H01S5/22 ,  H01S5/20

    CPC classification number: H01S5/1003 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0264 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/1237 ,  H01S5/2063 ,  H01S5/22 ,  H01S2301/166

    Abstract: A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).

    Abstract translation: 提供了包括边缘发射半导体本体（10）的半导体激光源。 半导体本体（10）包含具有n型层（111），有源层（112）和p型层（113）的半导体层堆叠（110），其形成用于产生电磁辐射，该电磁辐射包括相干 部分（21）。 半导体激光源被形成用于使电磁辐射的相干部分（21）与半导体本体（10）的相对于有源层（112）倾斜的去耦表面（101）去耦合。 半导体本体（10）包括相对于去耦表面（101）倾斜的另外的外表面（102A，102B，102C），并具有至少一个光扩散子区域（12,12A，12B，12C， 120A，120B），其被设置为将半导体层堆叠（110）产生的电磁辐射的一部分朝向另一外表面（102A，102B，102C）的方向引导。

    OPTOELECTRONIC LAMP DEVICE
    5.
    发明申请
    OPTOELECTRONIC LAMP DEVICE 审中-公开

    公开(公告)号：US20180097335A1

    公开(公告)日：2018-04-05

    申请号：US15566575

    申请日：2016-04-15

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Breidenassel ,  Roland Enzmann ,  Sergey Khrushchev

    IPC: H01S5/022 ,  G02B19/00 ,  G02B27/30

    CPC classification number: H01S5/02236 ,  G02B3/06 ,  G02B19/0014 ,  G02B19/0052 ,  G02B19/0057 ,  G02B27/30 ,  H01S5/005 ,  H01S5/02208 ,  H01S5/02268 ,  H01S5/02292 ,  H01S5/4093

    Abstract: An optoelectronic lamp device, including a carrier having a planar mounting face, at least one laser diode that emits laser radiation, wherein the laser diode has a fast axis and a slow axis, the laser diode is arranged on the mounting face such that the fast axis is formed extending parallel to the mounting face, a first collimator is provided for collimating laser radiation polarized in the direction of the fast axis, and a second collimator is provided for collimating laser radiation polarized in the direction of the slow axis, wherein, in the beam path of the laser radiation emitted by the laser diode, the first collimator is arranged proximally and the second collimator is arranged distally relative to the laser diode so that the laser radiation polarized in the direction of the fast axis can be collimated first, and only then can the laser radiation polarized in the direction of the slow axis be collimated.

Patent Agency Ranking