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1.发明申请METHODS FOR FORMING AN INTEGRATED CIRCUIT, INCLUDING OPENINGS IN A MOLD LAYER 有权形成集成电路的方法，包括模具层中的开口公开(公告)号：US20070286945A1
公开(公告)日：2007-12-13
申请号：US11687426
申请日：2007-03-16
申请人： Peter Lahnor , Odo Wunnicke , Johannes Heitmann , Peter Moll , Andreas Orth
发明人： Peter Lahnor , Odo Wunnicke , Johannes Heitmann , Peter Moll , Andreas Orth
CPC分类号： H01L28/40 , H01L27/10861 , Y10S977/70 , Y10S977/72
摘要： A method for forming an integrated circuit having openings in a mold layer and for producing capacitors is disclosed. In one embodiment, nanotubes or nanowires are grown vertically on a horizontal substrate surface. The nanotubes or nanowires serve as a template for forming openings in a mold layer. The substrate is covered with a mold material after the formation of the nanowires or nanotubes. One embodiment provides mold layers having openings with a much higher aspect ratio.
摘要翻译： 公开了一种在模具层中形成具有开口并用于制造电容器的集成电路的方法。 在一个实施例中，纳米管或纳米线在水平衬底表面上垂直生长。 纳米管或纳米线用作在模具层中形成开口的模板。 在形成纳米线或纳米管之后，用模具材料覆盖基底。 一个实施例提供了具有高得多的纵横比的开口的模具层。
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2.发明授权Methods for forming an integrated circuit, including openings in a mold layer from nanowires or nanotubes 有权用于形成集成电路的方法，包括来自纳米线或纳米管的模具层中的开口公开(公告)号：US07776759B2
公开(公告)日：2010-08-17
申请号：US11687426
申请日：2007-03-16
申请人： Peter Lahnor , Odo Wunnicke , Johannes Heitmann , Peter Moll , Andreas Orth
发明人： Peter Lahnor , Odo Wunnicke , Johannes Heitmann , Peter Moll , Andreas Orth
CPC分类号： H01L28/40 , H01L27/10861 , Y10S977/70 , Y10S977/72
摘要： A method for forming an integrated circuit having openings in a mold layer and for producing capacitors is disclosed. In one embodiment, nanotubes or nanowires are grown vertically on a horizontal substrate surface. The nanotubes or nanowires serve as a template for forming openings in a mold layer. The substrate is covered with a mold material after the formation of the nanowires or nanotubes. One embodiment provides mold layers having openings with a much higher aspect ratio.
摘要翻译： 公开了一种在模具层中形成具有开口并用于制造电容器的集成电路的方法。 在一个实施例中，纳米管或纳米线在水平衬底表面上垂直生长。 纳米管或纳米线用作在模具层中形成开口的模板。 在形成纳米线或纳米管之后，用模具材料覆盖基底。 一个实施例提供了具有高得多的纵横比的开口的模具层。
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3.发明申请公开(公告)号：US20140083010A1
公开(公告)日：2014-03-27
申请号：US14115376
申请日：2012-03-29
申请人： Andreas Orth , Agnes Von Garnier
发明人： Andreas Orth , Agnes Von Garnier
IPC分类号： C10J3/84
CPC分类号： C10J3/84 , C10J3/482 , C10J3/86 , C10J2300/093 , C10J2300/0959 , C10J2300/0976 , C10J2300/1884 , C10J2300/1892 , C21B13/0073 , C21C5/5217 , Y02P10/216
摘要： A process for producing fuel gas and for carrying out a metallurgical process includes providing first and second process stages. In the first process stage, biomass is reacted with an oxygen-containing gas so as to obtain a fuel gas containing at least one of carbon monoxide, hydrogen, carbon dioxide and steam. The fuel gas is cooled to a temperature in a range from 300 to 600° C. The cooled fuel gas is subjected to a solids separation. In the second process stage, the fuel gas after the solids separation is directly supplied to at least one burner of the metallurgical process, the temperature of the fuel gas being maintained above the condensation temperature of tar and within the range from 300 to 600° C. by supplying heat.
摘要翻译： 用于生产燃料气体和用于进行冶金工艺的方法包括提供第一和第二工艺阶段。 在第一工艺阶段，生物质与含氧气体反应，以获得含有一氧化碳，氢气，二氧化碳和蒸汽中的至少一种的燃料气体。 将燃料气体冷却至300至600℃的温度。冷却的燃料气体进行固体分离。 在第二工艺阶段，将固体分离后的燃料气体直接供给至少一个冶金过程的燃烧器，燃料气体的温度保持在焦油的冷凝温度以上，范围为300-600℃ 通过供热。
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公开(公告)号：US20110013662A1
公开(公告)日：2011-01-20
申请号：US12675448
申请日：2008-08-28
CPC分类号： B01J8/24 , B01J8/1818 , B01J8/1827 , B01J8/1836 , B01J8/1863 , B01J2208/00176 , B01J2208/00371 , B01J2208/00504 , B01J2208/0053 , B01J2208/00752 , B01J2208/00761 , F23C6/04 , F23C10/10 , F23C2900/10002 , F27B15/02 , F27B15/10
摘要： A process for at least one of a chemical and a physical treatment of fluidizable substances in a reactor. The process includes introducing a hot gas into an interior of the reactor through a gas supply tube and cooling at least one of the hot gas and the gas supply tube with a coolant. The cooling is performed by contacting the hot gas with the coolant so as to provide a temperature of a wall of the gas supply tube at least 50° C. lower than a temperature of the gas at an inlet of the gas supply tube facing away from the interior of the reactor.
摘要翻译： 一种反应器中可流化物质的化学和物理处理中的至少一种的方法。 该方法包括通过气体供应管将热气引入反应器的内部，并用冷却剂冷却至少一个热气体和气体供应管。 通过使热气体与冷却剂接触来进行冷却，从而使供气管壁的温度比气体供给管的入口处的气体的温度低至少50℃， 反应堆的内部。
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5.发明申请公开(公告)号：US20100313475A1
公开(公告)日：2010-12-16
申请号：US12867451
申请日：2009-02-04
CPC分类号： B01J8/1818 , B01J2208/00752 , C10G1/02
摘要： A process for refining raw materials containing oil and/or bitumen includes supplying the raw materials to a reactor. The reactor is operated under a pressure of from 0.001 to 1 bar and at a reactor temperature of from 300 to 1000° C. so as to volatize fuel gases and obtain solids and non-evaporated fractions of heavy hydrocarbons. The solids and non-evaporated fractions of heavy hydrocarbons are introduced into a furnace. The non-evaporated fractions of heavy hydrocarbons are burned in the furnace at a furnace temperature of from 600 to 1500° C. so as to obtain hot solids in the furnace. The hot solids are recirculated from the furnace into the reactor. An oxidizing atmosphere of the furnace is separated from an atmosphere of the reactor by a sealing device.
摘要翻译： 用于精炼含有油和/或沥青的原料的方法包括将原料供应到反应器中。 反应器在0.001至1巴的压力和300至1000℃的反应器温度下运行，以便挥发燃料气体并获得重质烃的固体和非蒸发馏分。 将重质烃的固体和非蒸发馏分引入炉中。 重质烃的非蒸发馏分在炉中在600至1500℃的炉温下燃烧，以便在炉中获得热固体。 热固体从炉再循环到反应器中。 通过密封装置将炉的氧化气氛与反应器的气氛分离。
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公开(公告)号：US20100269636A1
公开(公告)日：2010-10-28
申请号：US12832847
申请日：2010-07-08
CPC分类号： C21B13/0033 , C21B13/146 , F27B15/10 , Y02P10/122 , Y02P10/126 , Y02P10/136
摘要： An apparatus for reducing a metalliferous material in a fluidized bed includes a vessel for containing the fluidized bed, a mechanism for supplying the metalliferous material, a solid carbonaceous material, an oxygen-containing gas, and a fluidizing gas into the vessel for forming the fluidized bed in the vessel. The oxygen-containing gas supply mechanism includes one or more than one oxygen-containing gas injection lance having a lance tip with an outlet that is positioned for injecting the oxygen-containing gas in a downward flow into the vessel within a range of plus or minus 40° to the vertical.
摘要翻译： 用于还原流化床中的含金属材料的装置包括用于容纳流化床的容器，用于将含金属材料，固体碳质材料，含氧气体和流化气体供应到用于形成流化床的容器中的机构 在船上的床。 含氧气体供给机构包括一个或多于一个的含氧气体注入喷枪，其具有喷枪头，其具有出口，该出口位于将含氧气体以向下流动的方式注入到容器内，该加载气体在正或负的范围内 40°垂直。
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7.发明授权Method for fabricating trench capacitors for integrated semiconductor memories 有权用于制造用于集成半导体存储器的沟槽电容器的方法公开(公告)号：US07087484B2
公开(公告)日：2006-08-08
申请号：US10616396
申请日：2003-07-09
申请人： Matthias Goldbach , Jörn Lützen , Andreas Orth
发明人： Matthias Goldbach , Jörn Lützen , Andreas Orth
IPC分类号： H01L28/8242
CPC分类号： H01L27/10867 , H01L27/1087
摘要： In a method for fabricating trench capacitors, in particular for memory cells having at least one selection transistor for integrated semiconductor memories, a trench for the trench capacitor is formed. The trench has a lower trench region, in which the capacitor is disposed, and an upper trench region, in which an electrically conductive connection from an electrode of the capacitor to a diffusion zone of the selection transistor is disposed. The method reduces the number of process steps for the fabrication of memory cells and enables fabrication of buried collars in the storage capacitors with an insulation quality as required for the fabrication of very large-scale integrated memory cells (
摘要翻译： 在用于制造沟槽电容器的方法中，特别是对于具有用于集成半导体存储器的至少一个选择晶体管的存储器单元，形成用于沟槽电容器的沟槽。 沟槽具有设置电容器的下沟槽区域和上沟槽区域，其中设置从电容器的电极到选择晶体管的扩散区域的导电连接。 该方法减少了用于制造存储器单元的工艺步骤的数量，并且能够以存储非常大规模的集成存储器单元（<300nm沟槽直径）所需的绝缘品质在存储电容器中制造埋入的套环。
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公开(公告)号：US20050158945A1
公开(公告)日：2005-07-21
申请号：US10980069
申请日：2004-11-03
IPC分类号： H01L21/8239 , H01L21/334 , H01L21/8229 , H01L21/8242 , H01L29/94
CPC分类号： H01L29/66181 , H01L29/945
摘要： The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).
摘要翻译： 本发明提供了一种用于制造存储单元的方法，提供了一种衬底（101），蚀刻到衬底（101）中的沟槽型凹陷（102），在沟槽中非保形地沉积的阻挡层（103） 型凹陷（102），在沟槽型凹部（102）的内部区域上生长的晶粒元素（104），沉积在晶粒元素的表面上的介电层（202）和沟槽的内部区域 型凹陷，并且导电层沉积在电介质层上，晶粒元素（104）选择性地生长在形成下部区域的电极区域（301）中的沟槽型凹陷（102）的内部区域（105） 的沟槽型凹陷（102）和在形成沟槽型凹陷（102）的上部区域的凸缘区域（302）中继续生长的非晶硅层。
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9.发明授权公开(公告)号：US06688474B1
公开(公告)日：2004-02-10
申请号：US09700358
申请日：2000-11-13
申请人： Martin Hirsch , Andreas Orth , Peter Weber
发明人： Martin Hirsch , Andreas Orth , Peter Weber
IPC分类号： B07B400
CPC分类号： F27B15/02 , B01J8/0025 , B01J8/1872
摘要： According to the invention, a fluidizing gas is introduced upwards into the fluidized bed (3) through a valve grid (2), said stationary fluidized bed (3) containing solids with different grain sizes. A supply pipe (10) is disposed in the area of the fluidized bed, the mouth of said pipe being located above the valve grid (2) and its outlet (12) leading outwards from the fluidized bed (3). Part of the solids located above the valve grid (2) is blown into the supply pipe by a gas jet (13) which is directed upwards and fed separately from the fluidizing gas and pneumatically evacuated from the fluidized bed through the supply pipe (10). Normally, the flow speed of the gas in the supply pipe is at least two times higher than the speed of the fluidizing gas in the fluidized bed.
摘要翻译： 根据本发明，流化气体通过阀网格（2）向上引入流化床（3），所述固定流化床（3）含有不同晶粒尺寸的固体。 供给管（10）设置在流化床的区域中，所述管的口位于阀网格（2）的上方，以及从流化床（3）向外导出的出口（12）。 位于阀网格（2）上方的固体的一部分通过气体射流（13）吹送到供应管中，该气体射流（13）被引导向上并与流化气体分开供给，并通过供应管道（10）从流化床气动抽真空， 。 通常，供给管中的气体的流速比流化床中的流化气体的速度高至少两倍。
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公开(公告)号：US20140290480A1
公开(公告)日：2014-10-02
申请号：US14351883
申请日：2012-10-10
IPC分类号： B03C3/00
CPC分类号： B03C3/00
摘要： A process for dedusting a dust laden vapor gas mixture (VGM) obtained by pyrolysis of a material containing hydrocarbons includes treating the dust laden VGM in a dry electrostatic precipitator at a temperature in a range from 380 to 480° C. so as to separate dust from the VGM. Then, the VGM is cooled to a temperature in a range from 310 to 360° C.
摘要翻译： 通过对含有烃的材料进行热解而获得的含灰尘蒸汽气体混合物（VGM）的除尘方法包括在380-480℃的温度范围内，在干式静电除尘器中处理载有灰尘的VGM，以分离灰尘 来自VGM。 然后，将VGM冷却至310〜360℃的温度。
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