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公开(公告)号：US08769937B2
公开(公告)日：2014-07-08
申请号：US13362736
申请日：2012-01-31
IPC分类号： F01N3/00 , F01N3/02 , G01N7/00 , G01N33/497
CPC分类号： F01N11/00 , F01N2560/05 , Y02T10/47
摘要： A control method for monitoring a soot sensor of an exhaust treatment system is provided. The control method includes: determining when regeneration has completed; comparing soot sensor data to an estimated soot data based on the determining; and generating a message based on the comparing.
摘要翻译： 提供了一种用于监测废气处理系统的烟尘传感器的控制方法。 控制方法包括：确定再生完成时间; 基于该确定将煤烟传感器数据与估计的烟灰数据进行比较; 并基于比较生成消息。
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公开(公告)号：US20130192214A1
公开(公告)日：2013-08-01
申请号：US13362736
申请日：2012-01-31
CPC分类号： F01N11/00 , F01N2560/05 , Y02T10/47
摘要： A control method for monitoring a soot sensor of an exhaust treatment system is provided. The control method includes: determining when regeneration has completed; comparing soot sensor data to an estimated soot data based on the determining; and generating a message based on the comparing.
摘要翻译： 提供了一种用于监测废气处理系统的烟尘传感器的控制方法。 控制方法包括：确定再生完成时间; 基于该确定将煤烟传感器数据与估计的烟灰数据进行比较; 并基于比较生成消息。
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3.发明申请Polarization Direction of Optical Devices Using Selected Spatial Configurations 有权使用选定的空间配置的光学器件的极化方向公开(公告)号：US20120288974A1
公开(公告)日：2012-11-15
申请号：US13553691
申请日：2012-07-19
申请人： Rajat Sharma , Eric M. Hall
发明人： Rajat Sharma , Eric M. Hall
摘要： A GaN based light emitting diode device which emits polarized light or light of various degrees of polarization for use in the creation of optical devices. The die are cut to different shapes, or contain some indicia that are used to represent the configuration of the weak dipole plane and the strong dipole plane. This allows for the more efficient manufacturing of such light emitting diode based optical devices.
摘要翻译： 用于产生光学器件的GaN发光二极管器件，其发射具有各种偏振度的偏振光或光。 将模具切割成不同的形状，或者包含用于表示弱偶极平面和强偶极子平面的配置的一些标记。 这允许更有效地制造这种基于发光二极管的光学器件。
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4.发明授权Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods 有权在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件公开(公告)号：US08284810B1
公开(公告)日：2012-10-09
申请号：US12534838
申请日：2009-08-03
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译： 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{11-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。
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公开(公告)号：US06472695B1
公开(公告)日：2002-10-29
申请号：US09594838
申请日：2000-06-15
申请人： Eric M. Hall , Larry A. Coldren
发明人： Eric M. Hall , Larry A. Coldren
IPC分类号： H01L310304
CPC分类号： H01L21/02178 , H01L21/022 , H01L21/02241 , H01L21/02255 , H01L21/31666 , H01S5/18311 , H01S5/18372 , H01S5/3201 , H01S5/3235
摘要： The present invention discloses a device and a method for producing an oxidizable digital alloy that is sufficiently strain-compensated to provide for substantially defect-free growth on indium phosphide. The device comprises a layer of semiconductor material, a first layer, and a second layer. The first layer is indium arsenide and is coupled to the layer of semiconductor material, wherein the first layer of indium arsenide is under a compressive strain by a lattice mismatch between the layer of semiconductor material and the first layer of indium arsenide. The second layer is aluminum arsenide and is coupled to the layer of indium arsenide, wherein the second layer of aluminum arsenide is under a tensile strain by a lattice mismatch between the second layer and the first layer. The first layer and the second layer comprise a digital alloy of aluminum indium arsenide, and create a quasi-strain-compensated substantially defect-free alloy on the layer of semiconductor material therein. A superlattice period of the first layer of indium arsenide and a second layer of aluminum arsenide is selected to allow an oxide of desired depth to be produced from the digital alloy.
摘要翻译： 本发明公开了一种用于制造可氧化数字合金的装置和方法，其被充分应变补偿以在磷化铟上提供基本上无缺陷的生长。 该器件包括半导体材料层，第一层和第二层。 第一层是砷化铟并且耦合到半导体材料层，其中第一层砷化铟由于半导体材料层和第一层砷化铟之间的晶格失配而处于压缩应变之下。 第二层是砷化铝，并且与砷化铟层耦合，其中第二层砷化铝在第二层与第一层之间的晶格失配下处于拉伸应变之下。 第一层和第二层包括砷化铝铟的数字合金，并在其中的半导体材料层上产生准应变补偿的基本上无缺陷的合金。 选择第一层砷化铟的超晶格周期和第二层砷化铝，以允许从数字合金产生所需深度的氧化物。
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6.发明授权Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods 有权在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件公开(公告)号：US08494017B2
公开(公告)日：2013-07-23
申请号：US13606894
申请日：2012-09-07
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1−2±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译： 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{1 1-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。
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公开(公告)号：US07631556B2
公开(公告)日：2009-12-15
申请号：US11496971
申请日：2006-08-01
IPC分类号： G01F23/00
CPC分类号： G01F23/0084 , B60K15/061 , G01F23/36 , G01F25/0061 , G01F25/0069
摘要： A fuel level monitoring system for a fuel system having a primary fuel tank and a secondary fuel tank includes a fuel level sensor that is disposed within the secondary fuel tank and that generates a first signal. An empty switch is disposed within the secondary fuel tank and generates a second signal. A control module determines a condition of one of the fuel level sensor and the empty switch based on the first signal, the second signal and a plurality of signal thresholds.
摘要翻译： 一种用于具有一次燃料箱和二次燃料箱的燃料系统的燃料液位监视系统，包括设置在二次燃料箱内并产生第一信号的燃料液位传感器。 一个空的开关设置在二次燃料箱内并产生一个第二信号。 控制模块基于第一信号，第二信号和多个信号阈值来确定燃料液位传感器和空开关之一的状态。
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公开(公告)号：US20080028851A1
公开(公告)日：2008-02-07
申请号：US11496971
申请日：2006-08-01
IPC分类号： G01F23/00
CPC分类号： G01F23/0084 , B60K15/061 , G01F23/36 , G01F25/0061 , G01F25/0069
摘要： A fuel level monitoring system for a fuel system having a primary fuel tank and a secondary fuel tank includes a fuel level sensor that is disposed within the secondary fuel tank and that generates a first signal. An empty switch is disposed within the secondary fuel tank and generates a second signal. A control module determines a condition of one of the fuel level sensor and the empty switch based on the first signal, the second signal and a plurality of signal thresholds.
摘要翻译： 一种用于具有一次燃料箱和二次燃料箱的燃料系统的燃料液位监视系统，包括设置在二次燃料箱内并产生第一信号的燃料液位传感器。 一个空的开关设置在二次燃料箱内并产生一个第二信号。 控制模块基于第一信号，第二信号和多个信号阈值来确定燃料液位传感器和空开关之一的状态。
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9.发明授权Method of fabricating a distributed Bragg reflector by controlling material composition using molecular beam epitaxy 失效通过使用分子束外延控制材料成分制造分布式布拉格反射器的方法公开(公告)号：US06583033B2
公开(公告)日：2003-06-24
申请号：US09934789
申请日：2001-08-21
申请人： Eric M. Hall , Guilhem Almuneau
发明人： Eric M. Hall , Guilhem Almuneau
IPC分类号： H01L2120
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A distributed Bragg reflector for a vertical cavity surface emitting laser has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Accurate control of the composition of the semiconductor material system must be maintained to result in a distributed Bragg reflector suitable for use in a VCSEL. A method of fabricating the distributed Bragg reflector includes calibrating the incorporation of at least one of the elements into the material system as different semiconductor materials are grown on a substrate.
摘要翻译： 用于垂直腔表面发射激光器的分布式布拉格反射器具有包括元素铝，镓，砷和锑的半导体材料系统。 必须保持准确控制半导体材料系统的组成，以产生适用于VCSEL的分布布拉格反射镜。 一种制造分布式布拉格反射器的方法包括：在衬底上生长不同的半导体材料，校准将至少一个元件结合到材料系统中。
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公开(公告)号：US20130289848A1
公开(公告)日：2013-10-31
申请号：US13457905
申请日：2012-04-27
IPC分类号： F02D41/26
CPC分类号： F02D41/123 , F01N3/22 , F02D41/1441 , F02D41/1456 , F02D41/2438 , F02D41/2474 , Y02A50/2322
摘要： An oxygen sensor system for a vehicle includes a pump control module, a correction module, and a fuel control module. While fueling of an engine is cut off, the pump control module selectively turns ON an air pump that pumps ambient air into an exhaust system of the vehicle upstream of a universal exhaust gas oxygen (UEGO) sensor and a catalyst. The correction module receives an output of the UEGO sensor, selectively determines a correction for the output of the UEGO sensor when the air pump is ON and the fuel is cut off, and adjusts the output of the UEGO sensor based on the correction to produce a corrected output. The fuel control module, during fueling of the engine, selectively controls the fueling based on the corrected output.
摘要翻译： 用于车辆的氧传感器系统包括泵控制模块，校正模块和燃料控制模块。 当发动机的燃料供应被切断时，泵控制模块选择性地接通空气泵，该空气泵将环境空气泵送到通用废气氧（UEGO）传感器和催化剂上游的车辆的排气系统中。 校正模块接收UEGO传感器的输出，当空气泵打开并且燃料被切断时，选择性地确定UEGO传感器的输出的校正，并且基于校正来调整UEGO传感器的输出以产生 校正输出。 燃料控制模块在发动机加油期间基于校正的输出选择性地控制加油。
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