Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
    5.
    发明申请
    Chemical-mechanical planarization composition having ketooxime compounds and associated method for use 失效
    具有酮肟化合物的化学机械平面化组合物及其相关使用方法

    公开(公告)号:US20070049025A1

    公开(公告)日:2007-03-01

    申请号:US11508427

    申请日:2006-08-23

    IPC分类号: H01L21/44

    摘要: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketooxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

    摘要翻译: 描述了用于化学机械平面化(或其它抛光)的组合物和相关方法。 该组合物含有酮肟化合物和水。 组合物还可以含有磨料和/或每一种化合物氧化剂。 该组合物提供金属CMP中金属,阻挡材料和介电层材料的去除速率的可调性。 该组合物特别适用于金属CMP应用的相关方法(例如,步骤2铜CMP工艺)。

    CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
    9.
    发明申请
    CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use 失效
    硼表面改性磨料和硝基取代磺酸的CMP组成及其使用方法

    公开(公告)号:US20070054495A1

    公开(公告)日:2007-03-08

    申请号:US11509223

    申请日:2006-08-24

    IPC分类号: H01L21/302

    摘要: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

    摘要翻译: 描述了用于化学机械平面化(或其它抛光)的组合物和相关方法。 该组合物含有硼表面改性的研磨剂,硝基取代的磺酸化合物,每一种化合物的氧化剂和水。 该组合物在金属CMP工艺中为阻挡层材料提供高的去除率。 该组合物特别适用于金属CMP应用的相关方法(例如,步骤2铜CMP工艺)。

    Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole
    10.
    发明申请
    Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole 审中-公开
    具有支链烷基酚取代苯并三唑的化学机械平面化的低磨损组成和方法

    公开(公告)号:US20060213868A1

    公开(公告)日:2006-09-28

    申请号:US11374714

    申请日:2006-03-14

    摘要: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises a branched-alkylphenol-substituted-benzotriazole. The composition affords low dishing, high metal removal rates, and high selectivities for removal of copper in relation to barrier layer materials and dielectric materials whilst minimizing local erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP). The composition may also further comprise an isothiazoline compound to synergistically impart lower dishing levels during CMP processing.

    摘要翻译: 描述了用于化学机械平面化(或其它抛光)的组合物和相关方法。 该组合物包含支链烷基苯酚取代的苯并三唑。 该组合物提供了相对于阻挡层材料和电介质材料的低凹陷,高金属去除速率和用于去除铜的高选择性,同时最小化CMP中的局部侵蚀效应。 组合物还可以包含氧化剂,在这种情况下,组合物特别适用于金属CMP应用的相关方法(例如,铜CMP)。 该组合物还可以包含异噻唑啉化合物,以协同地赋予CMP处理期间更低的凹陷度。