摘要:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
摘要:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
摘要:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
摘要:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
摘要:
The present invention relates to an oral care composition comprising catechins. We have found that the catechins tend to darken the colour of the chalk based toothpaste due to its oxidation which happens at the high pH of the toothpaste. Once the catechins are oxidized and darken the colour of the toothpaste it is no longer available as such for providing anti-inflammatory benefits. It is an object of the invention to provide a chalk based toothpaste formulation which does not turn substantially dark due to ox illation of catechins. The present inventors while working with oral care compositions comprising catechins preferably green tea catechins for providing anti-inflammatory benefits, surprisingly found that some selected zinc salts when added in particular quantities do not result in darkening the colour of the toothpaste, and also, when stored, are able to deliver green tea catechins.
摘要:
The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant.The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.
摘要:
A composition comprising tea, 0.1 to 15% by weight of herb selected from Shankhpushpi, Shatavari, Vidarikhand, Arogyapacha or a mixture thereof; and 0.01 to 0.5% by weight of a flavouring agent is disclosed. Also disclosed is a process for manufacturing the composition.
摘要:
A post-CMP cleaning composition and method comprising same are disclosed herein. In one aspect, there is provided a composition comprising: water, an organic base, and a plurality of chelating agents comprised of a poly-amino carboxylic acid and a hydroxylcarboxylic acid wherein the pH of the composition ranges from 9.5 to 11.5.
摘要:
An acidic aqueous slurry composition comprising silica abrasive particles, an oxidizer, a quaternary ammonium hydroxide; and acid having a maximum pKa of about 2.5; and water is provided along with its use for polishing.
摘要:
A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.