摘要:
Fail information from testing of a DUT memory array is captured and compressed by utilizing a compression matrix which is related in size to the available redundancy associated with the DUT (device under test) memory array, and which, in essence, defines the limits of redundancy repair. The compression matrix includes a plurality of matrix cells fewer in number than the number of memory cells in the DUT memory array and is arranged in a matrix of compression rows and compression columns, the number R of compression rows in the compression matrix being equal to (a predetermined number of redundant rows in the memory array) times (a predetermined number of redundant memory columns+1), and the number C of compression columns in the compression matrix being equal to (a predetermined number of redundant memory columns) times (a predetermined number of redundant memory rows+1). The compression matrix is loaded with the fail information concurrently with testing of the DUT memory array.
摘要:
A clock circuit, together with a control current generator and a ratio circuit coupled thereto. The ratio circuit, of the invention, utilizes at least two capacitors each of which is coupled in series with a respective transistor and arranged in parallel with one another. Each capacitor transistor transistor pair is in parallel to the other and coupled between the control current generator and ground so that at least one of the transistors in a selected capacitor transistor series can be selectively turned off while the other can be directly controlled by the clock cycle. This circuit, generates timing edges within a clock cycle which timing edges can be any fraction of the clock cycle, and comprises a clock, a controlled current generator, and a ratio circuit coupled to the clock and the generator. Preferably this ratio circuit comprises at least two capacitor-transistor pairs coupled in parallel between the generator and ground with the clock being coupled to the control electrode of one of the transistors and being coupled to the control electrode of the other transistor together with a turn-off signal source. An element for discharging the capacitors is included in the circuit.
摘要:
An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.
摘要:
A control target structure and method for monitoring the lithographic affects on minimum feature in a lithographic process. The control target uses line array elements having a nominal width. By changing the shape of the line-ends of the elements the control target can be optimized for controlling either focus or dose.
摘要:
An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.
摘要:
A method and structure for creating a photomask data set includes inputting a design data set, creating a simulated printed data set by applying a lithography simulation model to chosen levels of the design data set, merging each chosen level of the design data set with each corresponding level of the simulated printed data set in order to produce a merged design data set, applying at least one test to the merged design data set, correcting the design data set based on results of the test to produce a corrected design data set, repeating the creating of the simulated printed data, merging, applying the test and correcting using the corrected design data set until the corrected design data set passes the test, and outputting the corrected design data set as the photomask data set.
摘要:
A method and structure for a photomask that includes a substrate having a first transmittance, a first pattern to be transferred to a photosensitive layer (the first pattern having a second transmittance lower than the first transmittance) and a second pattern having a third transmittance greater than the second transmittance and less than the first transmittance. The second pattern is adjacent at least a portion of the first pattern, and the substrate and the second pattern transmit light substantially in phase.
摘要:
A structure and method for checking semiconductor designs for design rule violations includes generating a predicted printed structure (i.e., an ideal image) based on the semiconductor designs, altering the ideal image to include potential manufacturing variations, thereby producing at least two production images representing different manufacturing qualities, and comparing the production images to the design rules to produce an error list.
摘要:
A method of forming an image having reduced comer rounding in a photoresist layer is provided which comprises exposing a photoresist layer to a first mask having a first image, said first image having at least two edges; exposing said photoresist layer to a second mask having a second image, said second image having at least two edges, the second image edges being substantially rotated relative to the first image edges to produce a latent image in said photoresist layer having edges substantially rotated relative to the first and second image edges; and developing the photoresist layer to produce said image.
摘要:
An assist feature is formed on a lithographic reticle or mask using a hybrid resist and an exposure dose such that only an annular area is effectively exposed having a width that is potentially less than the minimum feature size that can be resolved by the mask exposure tool to simultaneously or sequentially form both a feature of interest and an assist feature for enhancing imaging of the feature of interest when the feature is printed to a wafer. Since the assist feature can be imaged simultaneously with the feature of interest or multiple assist features imaged concurrently, possibly between closely spaced features, data volume and mask writing time are greatly reduced. The invention is particularly applicable to the scaling of contact holes for connections to active devices in extremely high density integrated circuits.