公开(公告)号：US06958229B2

公开(公告)日：2005-10-25

申请号：US09389318

申请日：1999-09-03

申请人： Osamu Suzuki ,  Kazuhisa Ono ,  Seiko Shigeta ,  Tsunehiro Aki ,  Kengo Akimoto

发明人： Osamu Suzuki ,  Kazuhisa Ono ,  Seiko Shigeta ,  Tsunehiro Aki ,  Kengo Akimoto

IPC分类号： A23K1/00 ,  A23K1/16 ,  C12P7/64

CPC分类号： C12P7/6427 ,  A23K10/16 ,  A23K20/158 ,  C12P7/6472

摘要： A method for producing highly unsaturated fatty acids comprising culturing a microorganism, belonging to the genus Mortierella and having resistance to a carbon source, in a medium having a carbon source concentration of at least 4% by weight, and collecting highly unsaturated fatty acids from the cultured products. Culturing the microorganism for about a week gives at least about 7 g/L of highly unsaturated fatty acids.

摘要翻译： 一种生产高度不饱和脂肪酸的方法，包括在碳源浓度至少为4％（重量）的培养基中培养属于被孢霉属（Mortierella）的微生物并具有耐碳源性的微生物，并从 培养产品。 将微生物培养约一周，得到至少约7g / L的高度不饱和脂肪酸。

公开(公告)号：US20060014268A1

公开(公告)日：2006-01-19

申请号：US11232037

申请日：2005-09-22

申请人： Osamu Suzuki ,  Kazuhisa Ono ,  Seiko Shigeta ,  Tsunehiro Aki ,  Kengo Akimoto

发明人： Osamu Suzuki ,  Kazuhisa Ono ,  Seiko Shigeta ,  Tsunehiro Aki ,  Kengo Akimoto

IPC分类号： C12P7/64 ,  C12N1/18 ,  C12P31/00

CPC分类号： C12P7/6427 ,  A23K10/16 ,  A23K20/158 ,  C12P7/6472

摘要： A method for producing highly unsaturated fatty acids comprising culturing a microorganism, belonging to the genus Mortierella and having resistance to a carbon source, in a medium having a carbon source concentration of at least 4% by weight, and collecting highly unsaturated fatty acids from the cultured products. Culturing the microorganism for about a week gives at least about 7 g/L of highly unsaturated fatty acids.

摘要翻译： 一种生产高度不饱和脂肪酸的方法，包括在碳源浓度至少为4％（重量）的培养基中培养属于被孢霉属（Mortierella）的微生物并具有耐碳源性的微生物，并从 培养产品。 将微生物培养约一周，得到至少约7g / L的高度不饱和脂肪酸。

公开(公告)号：US09935202B2

公开(公告)日：2018-04-03

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

公开(公告)号：US09782377B2

公开(公告)日：2017-10-10

申请号：US10546158

申请日：2004-03-26

申请人： Kengo Akimoto ,  Yoshiko Ono ,  Hiroshi Kawashima ,  Katsuya Nagai

发明人： Kengo Akimoto ,  Yoshiko Ono ,  Hiroshi Kawashima ,  Katsuya Nagai

IPC分类号： A61K31/202 ,  A23L1/30 ,  A23L33/12

CPC分类号： A61K31/202 ,  A23L33/12

摘要： A composition having a normalizing action for infradian rhythm and/or a synchronization promoting action for circadian rhythm (biological clock) containing arachidonic acid and/or an arachidonic acid-containing compound.

公开(公告)号：US09196633B2

公开(公告)日：2015-11-24

申请号：US12556704

申请日：2009-09-10

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L33/00 ,  H01L27/12 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/786

CPC分类号： H01L27/124 ,  G02F1/136204 ,  G02F1/136286 ,  H01L27/0266 ,  H01L27/1225 ,  H01L29/7869

摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

摘要翻译： 保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层 其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。 在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。 因此，可以降低结漏电，提高非线性元件的特性。

公开(公告)号：US09130043B2

公开(公告)日：2015-09-08

申请号：US12893513

申请日：2010-09-29

申请人： Kengo Akimoto

发明人： Kengo Akimoto

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device which includes a thin film transistor using an oxide semiconductor and having stable electric characteristics. In manufacture of a semiconductor device in which an oxide semiconductor is used for a channel formation region, after an oxide semiconductor film is formed, a conductive film including a metal, a metal compound, or an alloy that can absorb or adsorb moisture, a hydroxy group, or hydrogen is formed to overlap with the oxide semiconductor film with an insulating film provided therebetween. Then, heat treatment is performed in the state where the conductive film is exposed; in such a manner, activation treatment for removing moisture, oxygen, hydrogen, or the like adsorbed onto a surface of or in the conductive film is performed.

摘要翻译： 本发明的目的是提供一种用于制造高可靠性的半导体器件的方法，该半导体器件包括使用氧化物半导体并具有稳定的电特性的薄膜晶体管。 在使用氧化物半导体用于沟道形成区域的半导体器件的制造中，在形成氧化物半导体膜之后，可以使用能够吸收或吸附水分的金属，金属化合物或合金的导电膜，羟基 组或氢形成为与氧化物半导体膜重叠，其间设置有绝缘膜。 然后，在导电膜露出的状态下进行热处理; 以这种方式，执行吸附在导电膜表面上或导电膜中的水分，氧气，氢气等的活化处理。

公开(公告)号：US09111804B2

公开(公告)日：2015-08-18

申请号：US13346963

申请日：2012-01-10

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC分类号： H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

公开(公告)号：US09099562B2

公开(公告)日：2015-08-04

申请号：US12542068

申请日：2009-08-17

申请人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

发明人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869

摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

摘要翻译： 本发明的目的是提供一种半导体器件，其制造工艺不复杂并且可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来制造成本。 对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在氧化物半导体膜上形成第一导电膜和第二导电膜。 氧化物半导体膜在沟道区域中至少具有结晶化区域。

公开(公告)号：US08970106B2

公开(公告)日：2015-03-03

申请号：US13360838

申请日：2012-01-30

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

公开(公告)号：US08901552B2

公开(公告)日：2014-12-02

申请号：US13226713

申请日：2011-09-07

申请人： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

发明人： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

IPC分类号： H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/01 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

摘要翻译： 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。